Abstract: Resist residues, which is formed in a process of forming Al interconnections, are removed through use of a single chemical. A chemical which contains an organic acid or a salt thereof and water and which has a pH below 8 is used as a treatment for removing resist or resist residues. The chemical may be used in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching of an Al interconnection; in a process in which Al, W, Ti, TiN, and SiO2 are exposed on the surface of a wafer after etching a hole reaching an Al interconnection in an dielectric layer; in a process in which Cu is exposed on the surface of a semiconductor wafer after dry-etching of a Cu interconnection or etching of an interlayer dielectric film laid on a Cu interconnection; and in a process in which metal material such as W, WN, Ti, or TiN; poly-Si; SiN; and SiO2 are exposed on the surface of a wafer after etching of a metal gate.

Abstract: In a method of manufacturing a semiconductor device including a capacitor, a refractory metal layer is dry-etched using a resist pattern as a mask, whereby a first electrode pattern formed of refractory metal is provided. Sidewall of the first electrode pattern is cleaned using aqueous solution of a surface active agent. Through this procedure, etching residue formed on the sidewall of the electrode pattern is removed when the electrode pattern of refractory metal is produced through dry etching method.

Abstract: In order to provide a post-treatment method for dry etching which is improved to be capable of completely removing a deposit resulting from dry etching for forming a wire, a workpiece layer is formed on an underlayer oxide film which is formed on a wafer. A resist pattern having a prescribed shape is formed on the workpiece layer. The workpiece layer is dry-etched through the resist pattern serving as a mask. The resist pattern is removed. Ice particles or droplets are injected toward the wafer, thereby removing the deposit.

Abstract: The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.

Abstract: The present invention is directed to providing an apparatus which is improved so as to remove a contamination on a substrate efficiently. This apparatus includes a jet nozzle jetting out droplets toward a substrate. A liquid supply device and a gas supply device are connected to the jet nozzle. A mixing device mixing a liquid and a gas supplied to the jet nozzle and changing the liquid into the droplets is provided in the jet nozzle.

Abstract: A two-fluid cleaning jet nozzle has an atomizing unit provided with an atomizing tube in which a liquid is atomized by a pressurized gas into liquid droplets, and an accelerating unit provided with an accelerating tube which accelerates and jets the liquid droplets against the surface of a workpiece to remove dust particles adhering to the surface of the workpiece. The sectional area of the atomizing tube available for gas flow is greater than the sectional area of the accelerating tube available for flow of the gas and the liquid droplets. The accelerating tube has the shape of a straight cylindrical tube or a Laval nozzle.

Abstract: A cleaning apparatus is provided which removes contaminants sticking onto a wafer without damaging a device. The cleaning apparatus includes liquid supply means 23 for supplying a liquid not reactive to material constituting a wafer 1, and droplet forming means 10 for interrupting the liquid supplied from liquid supply means 23 to form a droplet 21 out of the liquid. The cleaning apparatus further includes spurting means 22 for spurting the droplet 21 toward the surface of wafer 1.

Abstract: Obtained are a washing apparatus inhibiting a washing liquid from losing its washability and a method therefor. A circulating pump (5) circulates a washing liquid (3) successively through a heater (6), a filter (7), and an overflow washing tank (2). The washing liquid (3) is gradually evaporated. On the other hand, a water supplier (10) supplies the overflow washing tank (2) with water through a tube (8). An amine supplier (11) supplies the overflow washing tank (2) with amines through a tube (9). A control unit (12) controls the quantities of the water and amines as supplied. In a washing part (50), therefore, the quantities of the water and amines are inhibited from being reduced upon a lapse of time from operation starting, whereby the washing liquid (3) is inhibited from losing its washability.

Abstract: A wafer rinsing apparatus includes an ice making hopper for making ice particles by heat exchange between fine droplets of liquid to be frozen and low-temperature liquefied gas. The ice making hopper is connected to a separation device for separating the ice particles and vaporized gas generated from the low-temperature liquefied gas. The ice particles separated by the separation device are jetted onto a wafer by a jetting device, thereby rinsing the surface of the wafer.

Abstract: A novel and improved polishing apparatus is disclosed which employs ice particles as an abrasive material, the hardness of which can be changed so as to match that of an article being polished for performing polishing operation in a most efficient manner without impairing or marring the polished surface of the article.

Abstract: A device for and a method of producing hyperfine frozen particles reduces the quantity of impurity particles in the hyperfine frozen particles produced and stabilizes the generation of hyperfine frozen particles. A hopper includes a heat exchanger through which a coolant, such as nitrogen gas or liquid nitrogen, is circulated. A nitrogen gas inlet through which low temperature nitrogen gas as a coolant is supplied includes a filter to produce a laminar flow of the gas.

Abstract: To remove foreign matter (contaminants in the form of fine particles or a film of oil) deposited on a solid surface, fine frozen particles (0.01 .mu.m to 5 mm in diameter) are used. The fine frozen particles, together with chilled nitrogen, are jetted onto the surface of a solid by the pressure of a carrier gas (nitrogen (N.sub.2) gas). These fine frozen particles are produced by freezing a liquid such as water (super pure water) or alcohol. The hardness of the fine frozen particles is adjusted according to the type of liquid, the frozen freezing temperature and jetting temperature in order to control the damage to the surface of the solid. Low temperature cleaning (0.degree. to -150.degree. C.) in which fine frozen particles and chilled nitrogen are sprayed is achieved.

Abstract: A cleaning device for semiconductor wafers includes a cleaning vessel, a frozen particle supply unit, a jet nozzle for ejecting the frozen particles toward the semiconductor wafer supported within the cleaning vessel, an exhaust duct coupled to the cleaning vessel, and an exhaust blower. First and second exhausts guide to the exhaust duct frozen particles and contaminants from within the cleaning vessel near the wafer and near the walls of the vessel, respectively. The first exhaust includes a first exhaust guide pipe whose upper and lower ends open to an interior of the cleaning vessel near the wafer and to the exhaust duct, respectively. The second exhaust may include a tapered exhaust guide pipe surrounding the first exhaust guide pipe or a plurality of exhaust guide pipes disposed circumferentially uniformly around the first exhaust guide pipe.

Abstract: A method in which a liquid is sprayed through a nozzle to form minute droplets of substantially uniform size. These uniform droplets are sprayed into and frozen by a refrigeration medium, such as liquid nitrogen, to form uniform diameter frozen particles. The frozen particles are ejected onto the surface of a substrate used in a liquid crystal display device to orient the liquid crystal material applied to the surface.

Abstract: A cleaning device using fine frozen particles electrically charges the fine frozen particles produced by atomizing a liquid within a refrigerated atmosphere, controlling the speed, direction and divergence of the charged particles to cause them to strike a desired portion of an object to be cleaned. All of these operations are performed in a variable degree of vacuum. Thus, the speed, direction and divergence of the particles and the particle grain size can be precisely controlled.