Abstract: A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and/or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

Abstract: A heat shield assembly includes a first heat shield segment having a first end and a second end spaced from the first end, and a heat shield retainer including a radial extension, wherein a torque bar aperture extends through the radial extension, the torque bar aperture configured to receive a torque bar. The heat shield retainer is secured from radial movement via the radial extension.

Abstract: Prepreg tapes suitable for automated placement process are formed by slitting a sheet of partially impregnated prepreg. The partially impregnated prepreg is composed of unidirectional fiber tows partially embedded in a resin layer and has a continuous resin surface only on one side. In some embodiments, one or two nonwoven veil(s) is/are incorporated into the partially impregnated prepreg.

Abstract: A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and/or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

Abstract: A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and/or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

Abstract: A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and/or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

Abstract: A bipolar complementary-metal-oxide-semiconductor (BiCMOS) device includes a MOS transistor including CMOS nickel silicided regions in a CMOS region, and a bipolar transistor in a bipolar region. The bipolar transistor includes a nickel silicided emitter, a collector, and a base including an intrinsic base, a link base, and a nickel silicided extrinsic base. The intrinsic base is situated between the nickel silicided emitter and the collector. A dielectric spacer separates the link base from the nickel silicided emitter. The nickel silicided extrinsic base provides an electrical connection to the link base and the intrinsic base. A nickel silicided collector sinker provides an electrical connection to the collector. The CMOS nickel silicided regions, nickel silicided emitter, nickel silicided extrinsic base, and nickel silicided collector sinker can include an additive of molybdenum (Mo) and/or platinum (Pt). A low temperature rapid thermal anneal can be performed so as to prevent deactivation of dopants.

Abstract: A slope mower includes a mower body, drive wheels, left and right mower decks and left and right support wheels mounted on support arms pivotally mounted to the mower body with hydraulic actuators acting on the left and right support arms to maintain the mower body vertical. An inclinometer measures the tilt angle of the mower body and a controller reads the angle and controls a leveling valve to supply hydraulic fluid from a supply line to the leveling actuator toward which the inclinometer indicates the mower body is leaning to move the mower body back to vertical. The system can be programmed to actuate a leveling actuator only when the detected tilt angle exceeds a minimum angle. Lockout valves can be actuated by the controller to block the flow of hydraulic fluid to or from both actuators if a maximum allowed tilt angle is exceeded.

Abstract: A grommet for a heat shield may comprise a radially outward surface and a radially inward surface opposite the radially outward surface. A plug opening may be formed in the radially outward surface. An exterior radial surface may extend from the radially outward surface to the radially inward surface. A shield groove may be formed in the exterior radial surface. An inward protrusion may extend radially inward from the radially inward surface.

Abstract: A pest control device comprising a capacitive sensor array including a plurality of sensor pads, the capacitive sensor array being configured to generate an electrical output signal indicating the state of each sensor pad, and an electronic controller electrically connected to the capacitive sensor array, the electronic controller including a processor and a memory including a plurality of instructions, which, when executed by the processor, causes the processor to: receive the electrical output signals from the capacitive sensor array, determine a measured capacitance value for each sensor pad based on each electrical output signal, calculate a baseline for each sensor pad based on the measured capacitance value of the sensor pad, determine whether a difference between the measured capacitance value of at least one sensor pad and its corresponding baseline exceeds a first predetermined threshold, update a counter when the first predetermined threshold is exceeded, and record an event indicative of a presence

Abstract: In tuning a radio frequency (RF) module including a non-volatile tunable RF filter, a desired frequency and an undesired frequency being provided by an amplifier of the RF module are detected. The non-volatile tunable RF filter is coupled to an output of the amplifier of the RF module. A factory setting of an adjustable capacitor in the non-volatile tunable RF filter is changed by factory-setting a state of a non-volatile RF switch, such that the non-volatile tunable RF filter substantially rejects the undesired frequency and substantially passes the desired frequency. The adjustable capacitor includes the non-volatile RF switch, and the factory setting of the adjustable capacitor corresponds to a factory-set state of the non-volatile RF switch. An end-user is prevented access to the non-volatile RF switch, so as prevent the end-user from modifying the factory-set state of the non-volatile RF switch.

Abstract: A semiconductor structure includes a porous semiconductor segment adjacent to a first region of a substrate, and a crystalline epitaxial layer situated over the porous semiconductor segment and over the first region of the substrate. A first semiconductor device is situated in the crystalline epitaxial layer over the porous semiconductor segment. The first region of the substrate has a first dielectric constant, and the porous semiconductor segment has a second dielectric constant that is substantially less than the first dielectric constant such that the porous semiconductor segment reduces signal leakage from the first semiconductor device. The semiconductor structure can include a second semiconductor device situated in the crystalline epitaxial layer over the first region of the substrate, and an electrical isolation region separating the first and second semiconductor devices.

Abstract: A system and method for transmitting packets from a transceiver to a repeater in the presence of relative motion between the transceiver and the repeater. In some embodiments, the method includes: adjusting a plurality of transmission times; transmitting each of a plurality of packets, at a respective adjusted transmission time, from the transceiver to the repeater; and retransmitting, by the repeater, each of the packets, at a respective retransmission time, each of the retransmission times being, as a result of the adjusting, more nearly the same as it would have been, in the absence of: the relative motion, and the adjusting.

Abstract: A semiconductor structure includes a substrate having a first dielectric constant, a porous semiconductor layer situated over the substrate, and a crystalline epitaxial layer situated over the porous semiconductor layer. A first semiconductor device is situated in the crystalline epitaxial layer. The porous semiconductor layer has a second dielectric constant that is substantially less than the first dielectric constant such that the porous semiconductor layer reduces signal leakage from the first semiconductor device. The semiconductor structure can include a second semiconductor device situated in the crystalline epitaxial layer, and an electrical isolation region separating the first and second semiconductor devices.

Abstract: An extendible or adjustable length level is provided. The level includes a frame, a slidable member, and a bushing. The slidable member is coupled to the frame and extends and retracts along the frame. The bushing is coupled to one of the frame or the slidable member and couples the frame and slidable member together.

Abstract: A multi-deck circuit arrangement including a first deck circuit having a negative supply terminal and a second deck having a positive supply terminal connected to the negative supply terminal. A single power supply provides a voltage across both the first and second decks. The total power consumption will be less than the prior art of having both deck circuits conventionally regulated. The supply rail connecting the second deck's positive supply terminal to the first deck's negative supply terminal may be regulated. In one embodiment, the rail voltage can be controlled to optimize deck circuit operation for speed and power and to avoid level shifters when interfacing to other circuits.

Abstract: Provided herein are rapid and reversible methods to non-specifically immobilize peptides and proteins irrespective of their sequence, as well as small molecules, on a solid support to allow for manipulations of and reactions with these molecules in a manner that does not require purification between steps, which increases sample yield and reduces the quantity of starting material required.

Abstract: Spatial spreading is performed in a multi-antenna system to randomize an “effective” channel observed by a receiving entity for each transmitted data symbol block. For a MIMO system, at a transmitting entity, data is processed (e.g., encoded, interleaved, and modulated) to obtain ND data symbol blocks to be transmitted in NM transmission spans, where ND?1 and NM>1. The ND blocks are partitioned into NM data symbol subblocks, one subblock for each transmission span. A steering matrix is selected (e.g., in a deterministic or pseudo-random manner from among a set of L steering matrices, where L>1) for each subblock. Each data symbol subblock is spatially processed with the steering matrix selected for that subblock to obtain transmit symbols, which are further processed and transmitted via NT transmit antennas in one transmission span. The ND data symbol blocks are thus spatially processed with NM steering matrices and observe an ensemble of channels.

Abstract: A semiconductor structure includes a substrate having a first dielectric constant, a porous semiconductor layer situated over the substrate, and a crystalline epitaxial layer situated over the porous semiconductor layer. A first semiconductor device is situated in the crystalline epitaxial layer. The porous semiconductor layer has a second dielectric constant that is substantially less than the first dielectric constant such that the porous semiconductor layer reduces signal leakage from the first semiconductor device. The semiconductor structure can include a second semiconductor device situated in the crystalline epitaxial layer, and an electrical isolation region separating the first and second semiconductor devices.

Abstract: An interconnectable heating blanket is presented. The interconnectable heating blanket comprises a first face, a second face, and a plurality of sides. At least one side of the plurality of sides comprises a power connector.