Patents by Inventor Jürgen Off

Jürgen Off has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optoelectronic Semiconductor Body with a Quantum Well Structure
    Publication number: 20120298951
    Abstract: An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer (1) and a p-conducting layer (5).
    Type: Application
    Filed: July 22, 2010
    Publication date: November 29, 2012
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Tobias Meyer, Matthias Peter, Rainer Butendeich, Tetsuya Taki, Juergen Off, Alexander Walter
  • ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP
    Publication number: 20120161103
    Abstract: An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.
    Type: Application
    Filed: June 30, 2010
    Publication date: June 28, 2012
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Matthias Peter, Tobias Meyer, Jürgen Off, Tetsuya Taki, Joachim Hertkorn, Matthias Sabathil, Ansgar Laubsch, Andreas Biebersdorf
  • Radiation-emitting semiconductor component and method for making same
    Patent number: 7005681
    Abstract: A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) is applied.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: February 28, 2006
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Stefan Bader, Viorel Dumitru, Volker Härle, Bertram Kuhn, Alfred Lell, Jürgen Off, Ferdinand Scholz, Heinz Schweizer