Abstract: Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

Abstract: A strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion is disclosed. The strained crystalline layer is epitaxially bonded, or grown, on top of a SiGe relaxed buffer layer, in a way that the tensilely strained SiGe has a Ge concentration below that of the SiGe relaxed buffer, and the compressively strained SiGe has a Ge concentration above that of the SiGe relaxed buffer. The strained crystalline layer and the relaxed buffer can reside on top a semi-insulator substrate or on top of an insulating divider layer. In some embodiments the tensile SiGe layer is pure Si, and the compressive SiGe layer is pure Ge. The tensilely strained SiGe layer is suited for hosting electron conduction type devices and the compressively strained SiGe is suited for hosting hole conduction type devices. The strained crystalline layer is capable to seed an epitaxial insulator, or a compound semiconductor layer.

Abstract: A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.

Abstract: An apparatus and method for forming at least a portion of an electronic device include a High Vacuum-Chemical Vapor Deposition (UHV-CVD) system and a Low Pressure-Chemical Vapor Deposition (LPCVD) system using a common reactor. The invention overcomes the problem, of silicon containing wafers being dipped in HF acid prior to CVD processing, and the problem of surface passivation between processes in multiple CVD reactors.

Abstract: A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1?yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1?yGey, and strained Si1?yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1?yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

Abstract: A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects. The MODFET design includes a high-mobility conducting channel layer wherein the method allows the counter doping to be formed using a standard technique such as ion implantation, and further allows the high-mobility channel to be in close proximity to the counter doping without degradation of the mobility.

Abstract: A method and device for the treatment of an aneurysm are provided. Different therapeutic agents are delivered to the aneurysmal site by a reservoir and delivery means in a localized, and, in some embodiments, time-released regimen, to treat, limit and reduce the severity of the aneurysm.

Abstract: A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

Abstract: A silicon and silicon germanium based semiconductor MODFET device design and method of manufacture. The MODFET design includes a high-mobility layer structure capable of ultra high-speed, low-noise for a variety of communication applications including RF, microwave, sub-millimeter-wave and millimeter-wave. The epitaxial field effect transistor layer structure includes critical (vertical and lateral) device scaling and layer structure design for a high mobility strained n-channel and p-channel transistor incorporating silicon and silicon germanium layers to form the optimum modulation-doped heterostructure on an ultra thin SOI or SGOI substrate capable of achieving greatly improved RF performance.

Abstract: Methods and apparatus for aiding aneurysm repair are provided. Such apparatus is constructed to support or bolster the aneurysmal site initially, while contracting if the aneurysmal site shrinks or contracts. The apparatus also supplies a pharmaceutical agent to aid in healing the surrounding aneurysmal tissue. The apparatus may comprise a drug eluting polymer or may have a passive coating which can be selectively deployed by adding an activation agent after deployment. The device can be used alone or in conjunction with a AAA stent graft that isolates the aneurysmal sac from the vascular system.

Abstract: An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an n- or p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers.

Abstract: Treatment of aneurysmal blood vessels with local delivery of therapeutic agents thereby reduces or lessens the severity of an aneurysm, and, where used in conjunction with the placement of an excluding device, provides for more rapid recovery of the blood vessel from any disturbance occurring during placement of the excluding device. Therapeutic agents are placed in the aneurysmal site in a time-release carrier medium, such that the therapeutic agent is released into the aneurysmal site over a period of time without the need to provide systemic introduction of the therapeutic agent. The carrier may be introduced through the patient's dermis, such as with the use of a laparoscope, or intravacularly, through the use of a catheter. The carrier may be in a solid matrix, viscous liquid or liquid form.

Abstract: In a client-server system where a client system presents a browser for user interaction, a browser user interface includes functionality for handling dynamic interface elements received by the browser in connection with received pages, presented as part of the browser user interface and modified in response to selected user input without requiring further interaction with a server. In addition to, or in place of, dynamic interface elements such as slide sheets, the browser user interface might also include a rotation display area, tool displays that can overlay a page, opaquely or semi-transparently, menu structures, and an ability for the user to modify a page layout without requiring server interaction.

Abstract: The present invention encompasses methods and apparatus for minimizing the risks inherent in endovascular grafting for blood vessel therapy and repair. The invention involves delivering adult stem cells, embryonic stem cells, progenitor cells, fibroblasts, or smooth muscle cells to the diseased blood vessel.

Abstract: A system and method for displaying images and video with a web page are disclosed. In one embodiment, images and video may be displayed in a web page by providing a web page including a display window, a timer, and a video retrieval module. The timer may commence upon the web page being downloaded into a browser at a client device. The web page displays a first image in the display window and plays at least a portion of a first video file within the display window in response to entry of a play command. The web page displays a second image in the display window in response to the expiration of a predetermined time as determined by the timer and no entry of the play command.

Abstract: An aneurysm filling system includes a guide catheter, a delivery tubing containing a plurality of embolizing units of an embolizing material, and a pushrod within said delivery tube. The pushrod pushes the embolizing units out of the delivery tubing once the delivery tube has been guided through the guide catheter to a delivery position. A method for treating an aneurysm includes deploying an endoluminal prosthesis and an embolizing material adjacent the aneurysm. The embolizing material is expanded to fill a portion of the aneurysm. The endoluminal prosthesis retains the expanded embolizing material within the aneurysm. A vascular implant system for treating an aneurysm includes an endoluminal prosthesis, a guide catheter including a delivery tubing slidably carried therein, and an embolizing material positioned within the delivery tubing. The embolizing material expands and fills a portion of the aneurysm when deployed from the delivery tubing.

Abstract: A high gain, high frequency transistor is formed having a combination of a moderately doped retrograde emitter and a collector which is formed by self-aligned implantation through an emitter opening window. This combination allows continued base width scaling and ensures high current capability yet limits the electric field at the emitter-base junction, particularly near the base contacts, in order to reduce leakage and capacitance and to enhance breakdown voltage. Cut-off frequencies on the order of 100 GHz can thus be obtained in the performance of a transistor with a 30 nm base width in a SiGe device.

Abstract: An improved adjustable wheel structure mainly adapted for use in a trailing vehicle on which a yacht, boat or motorcycle can be mounted for transportation; the present wheel structure is provided with a special nut member having its inner surface half threaded and half smoothed, and the nut member is able to be adjusted forward or backward so that the threaded inner surface thereof can be selectively engaged with a vertically disposed adjusting screw rod which has a smaller diameter than the central through hole of the slidable nut member so that the wheel structure can be smoothly adjusted in height; as the threaded side of the nut member is adjusted to disengage from the screw rod with the smoothed side thereof in contact with the adjusting screw rod, the wheel structure can be adjusted quickly rather than in stepwise manner.