Abstract: A void bushing for a vehicle suspension is configured to have protrusion parts formed to protrude outwards on a bulge part of an inner pipe. The protrusion parts are located to be disposed in oblique line directions between void portions of an elastic body that is filled between the inner pipe and an outer pipe. In the void bushing, ride comfort characteristics and durability characteristics of a vehicle may be maintained, as they are, under favorable conditions by the void portions. Further the handling response characteristics of the vehicle may be advantageously improved by promoting a rigidity increase through the protrusion parts.

Abstract: A method for manufacturing a lightweight cowl crossbar includes: producing an inner pipe, laminating a plurality of composite material layers wound around the inner pipe, and extruding an outer pipe on the winding layer, in which the plurality of composite material layers adjacent to each other are wound in different directions.

Abstract: A battery cell assembly, including: a cell block including a plurality of battery cells; and a side frame disposed on one side surface of the cell block, wherein the side frame includes a side wall portion and a flange portion disposed on the side wall portion on a side opposite the cell block and configured to be fastened to an external support structure, and wherein the side wall portion includes a hollow space formed throughout an inside thereof.

Abstract: Provided is a pixel driving circuit operatable in a low-definition mode and a high-definition mode using the same pixel memory, and a display device including the same. The pixel driving circuit may include a driving line configured to connect between an emitter and a positive power source or between the emitter and a negative power source, a first transistor connected in series on the driving line and turned on in response to a pulse width modulation (PWM) signal, a first driving unit and a second driving unit that are connected in series on the driving line and electrically connected in parallel to each other, and a second transistor connected between a reference voltage source, which is connected to apply a reference voltage to the first driving unit and the second driving unit, and the second driving unit and turned on or off in response to a display mode selection signal.

Abstract: A battery pack including a battery cell assembly including a cell block having a plurality of battery cells, and a bottom cover plate under a bottom surface of the cell block, a housing having an opening, and accommodating the battery cell assembly, and a pack cover coupled to the housing and covering the opening, wherein the battery cell assembly and a bottom wall of the housing are spaced apart from each other to form a first space, and wherein the bottom cover plate includes a venting passage in communication with the first space.

Abstract: The present embodiments relate to a vehicle control device and method, and a vehicle system. The vehicle control device may include a determinator determining a road surface condition based on vehicle driving information and determining whether to brake a vehicle based on a result of determining the road surface condition and a vehicle controller controlling a braking device according to a result of determining whether to brake the vehicle by the determinator and controlling a steering device based on control of the braking device.

Abstract: Provided is an entertainment system including: a creator terminal configured to transmit creative work information; an administrator terminal configured to select valid creative work information among the creative work information received from the creator terminal; a server configured to generate audio-visual data based on the valid creative work information uploaded by the administrator terminal and generate an non-fungible token (NFT) that corresponds one-to-one with the audio-visual data; an investor terminal configured to exchange the NFT generated by the server with a predetermined electronic currency; and a predetermined metaverse platform configured to generate the predetermined electronic money.

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract: Disclosed in a reel-to-reel surface press apparatus. The reel-to-reel surface press apparatus includes an uncoiler and a recoiler, both transferring a component in a reel-to-reel method, a press disposed between the uncoiler and the recoiler, comprising a press plate pressing the component, and having a plurality of reference holes at an equal pitch along an edge of the press plate, a feeder disposed at the rear of the uncoiler and moving the component, and a controller configured to control the component to be transferred based on at least any one of the plurality of reference holes.

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: The present embodiments relate to a vehicle control device and method, and a vehicle system. The vehicle control device may include a determinator determining a road surface condition based on vehicle driving information and determining whether to brake a vehicle based on a result of determining the road surface condition and a vehicle controller controlling a braking device according to a result of determining whether to brake the vehicle by the determinator and controlling a steering device based on control of the braking device.

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract: A vertical memory device includes a substrate including a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, a channel structure on the cell array region and extending in a direction perpendicular to an upper surface of the substrate while penetrating through the plurality of gate electrode layers, a dummy channel structure on the connection region and extending in the direction perpendicular to the upper surface of the substrate while penetrating through at least a portion of the plurality of gate electrode layers, and a support insulating layer between a portion of the plurality of gate electrode layers and the dummy channel structure. The plurality of gate electrode form a stepped structure on the connection region.

Abstract: The invention relates to a steel sheet for tool, and method for manufacturing thereof. An embodiment of the present invention is a steel sheet for a tool comprising 0.4 to 0.6 wt % of C, 0.05 to 0.5 wt % of Si, 0.1 to 1.5 wt % of Mn, 0.05 to 0.5 wt % of V, 0.1 to 2.0 wt % of at least of one or two components selected from the group comprising Ni, Cr, Mo, and combinations thereof, and the balance of Fe and inevitable impurities, with respect to 100 wt % of the total steel sheet, and provides a steel sheet for a tool of which the deviation of Rockwell hardness by the position in the width direction is within 5 HRC, and the ratio of those having a wave height in the longitudinal direction within 20 cm is 90% or more with respect to the wave height per 1 m of the steel sheet comprising the central portion in the longitudinal direction of the steel sheet for a tool.

Abstract: A power conversion device comprises: a DC link capacitor charged with a DC power supplied from a power supply part; a fuse part, for breaking a current which is output from or supplied to the power supply part and has a first breaking magnitude or greater; a relay part which comprises a first relay for connecting a positive terminal of the fuse part to a positive terminal of the DC link capacitor and a second relay for connecting a negative terminal of the fuse part to a negative terminal of the DC link capacitor; an initial charge part, for charging the DC link capacitor by using DC power supplied from the power supply part; and a power conversion part for converting the direct-current power supplied from the power supply part into AC power when the DC link capacitor has been charged and supplying the alternating-current power to a load terminal.

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract: In one embodiment, the semiconductor device includes a stack of alternating interlayer insulating layers and conductive layers on a substrate. Each of the conductive layers extends in a first direction less than a previous one of the conductive layers to define a landing portion of the previous one of the conductive layers. An insulating plug is in one of the conductive layers under one of the landing portions, and a contact plug extends from an upper surface of the one of the landing portions.