Patents by Inventor Jae-Hoon Jang

Jae-Hoon Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9478291
    Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: October 25, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-hun Jeong, Han-soo Kim, Won-seok Cho, Jae-hoon Jang, Sun-il Shim
  • Publication number: 20160284419
    Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
    Type: Application
    Filed: June 8, 2016
    Publication date: September 29, 2016
    Inventors: Sun-Il SHIM, Jae-Hoon JANG, Donghyuk CHAE, Youngho LIM, Hansoo KIM, Jaehun JEONG
  • Publication number: 20160284729
    Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
    Type: Application
    Filed: June 8, 2016
    Publication date: September 29, 2016
    Inventors: Jae-hun Jeong, Han-soo Kim, Won-seok Cho, Jae-hoon Jang, Sun-il Shim
  • Publication number: 20160247547
    Abstract: A vertical non-volatile memory device is structured/fabricated to include a substrate, groups of memory cell strings each having a plurality of memory transistors distributed vertically so that the memory throughout multiple layers on the substrate, integrated word lines coupled to sets of the memory transistors, respectively, and stacks of word select lines. The memory transistors of each set are those transistors, of one group of the memory cell strings, which are disposed in the same layer above the substrate. The word select lines are respectively connected to the integrated word lines.
    Type: Application
    Filed: April 29, 2016
    Publication date: August 25, 2016
    Inventors: SUNG-MIN HWANG, HAN-SOO KIM, WON-SEOK CHO, JAE-HOON JANG, SUN-IL SHIM, JAE-HUN JEONG, KI-HYUN KIM
  • Patent number: 9413280
    Abstract: An inverter is provided. The inverter includes a current providing unit providing a first axis current and a second axis current to an induction motor; a revolutions per minute (RPM) measuring unit measuring the RPM of the induction motor; and a control unit changing the second axis current according to the measured RPM.
    Type: Grant
    Filed: March 25, 2014
    Date of Patent: August 9, 2016
    Assignee: LSIS CO., LTD.
    Inventors: Byung Woon Jang, Chun Suk Yang, Jae Hoon Jang, Joong Ki Jung, Sun Woo Lee
  • Publication number: 20160225451
    Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
    Type: Application
    Filed: April 8, 2016
    Publication date: August 4, 2016
    Inventors: Jae-hun Jeong, Han-soo Kim, Won-seok Cho, Jae-hoon Jang, Sun-il Shim
  • Patent number: 9390803
    Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: July 12, 2016
    Assignee: Samsung electronics Co., Ltd.
    Inventors: Sun-il Shim, Jae-Hoon Jang, Donghyuk Chae, Youngho Lim, Hansoo Kim, Jaehun Jeong
  • Patent number: 9378831
    Abstract: Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: June 28, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jinman Han, Sun-Il Shim, Donghyuk Chae, Jae-Hoon Jang, Youngho Lim, Hansoo Kim, Jaehun Jeong
  • Patent number: 9336884
    Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: May 10, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-hun Jeong, Han-soo Kim, Won-seok Cho, Jae-hoon Jang, Sun-il Shim
  • Publication number: 20160059712
    Abstract: A battery pack includes a main battery including a plurality of battery cells, a power conversion unit configured to change a level of a voltage output from the main battery, a main relay unit disposed between the main battery and the power conversion unit, the main relay unit switching a connection between the main battery and the power conversion unit, and a control unit configured to monitor a state of the main battery and control operation of the power conversion unit, wherein the control unit includes units for measuring voltage, current and temperature values of the main battery and a unit for outputting a gate signal for controlling the operation of the power conversion unit.
    Type: Application
    Filed: July 29, 2015
    Publication date: March 3, 2016
    Applicant: LSIS CO., LTD.
    Inventor: Jae Hoon JANG
  • Publication number: 20150380093
    Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
    Type: Application
    Filed: September 9, 2015
    Publication date: December 31, 2015
    Inventors: Sun-il SHIM, Jae-Hoon JANG, Donghyuk CHAE, Youngho LIM, Hansoo KIM, Jaehun JEONG
  • Patent number: 9211884
    Abstract: A battery information display apparatus is provided. The battery information display apparatus includes a data storage unit storing battery capacity information according to temperature and current of a battery of an electric vehicle, an integrated power control unit providing power for charging the battery and driving a motor, a sensor measuring the temperature and current of the battery, and a display unit displaying a battery remnant. The integrated power control unit calculates the battery remnant from the battery temperature and current measured by the sensor on the basis of the battery capacity information according to the battery temperature and current stored in the data storage unit and provides the calculated battery remnant to the display unit.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: December 15, 2015
    Assignee: LSIS Co., Ltd.
    Inventors: Byung Woon Jang, Hong Tae Park, Jae Hoon Jang, Yong Jin Kang
  • Publication number: 20150348637
    Abstract: Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.
    Type: Application
    Filed: August 7, 2015
    Publication date: December 3, 2015
    Inventors: Jinman HAN, Sun-Il SHIM, Donghyuk CHAE, Jae-Hoon JANG, Youngho LIM, Hansoo KIM, Jaehun JEONG
  • Publication number: 20150321696
    Abstract: Provided is a method for controlling rear wheel steering provided for a vehicle. The method includes: recognizing an abnormal condition of a sensor; calculating a speed of a vehicle; calculating a steering angular velocity of the vehicle; calculating torque of a steering column of the vehicle; determining a curvature of a lane along which the vehicle is traveling; and determining a rear wheel steering angle of the vehicle based on the speed of the vehicle, the steering angular velocity, the torque of the steering column, and the curvature of the lane.
    Type: Application
    Filed: May 6, 2015
    Publication date: November 12, 2015
    Applicant: MANDO CORPORATION
    Inventor: Jae Hoon JANG
  • Publication number: 20150117118
    Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
    Type: Application
    Filed: January 6, 2015
    Publication date: April 30, 2015
    Inventors: Sun-Il SHIM, Jae-Hoon JANG, Donghyuk CHAE, Youngho LIM, Hansoo KIM, Jaehun JEONG
  • Publication number: 20150073633
    Abstract: A battery information display apparatus is provided. The battery information display apparatus includes a data storage unit storing battery capacity information according to temperature and current of a battery of an electric vehicle, an integrated power control unit providing power for charging the battery and driving a motor, a sensor measuring the temperature and current of the battery, and a display unit displaying a battery remnant. The integrated power control unit calculates the battery remnant from the battery temperature and current measured by the sensor on the basis of the battery capacity information according to the battery temperature and current stored in the data storage unit and provides the calculated battery remnant to the display unit.
    Type: Application
    Filed: July 9, 2014
    Publication date: March 12, 2015
    Applicant: LSIS CO., LTD.
    Inventors: Byung Woon JANG, Hong Tae PARK, Jae Hoon JANG, Yong Jin KANG
  • Publication number: 20150069936
    Abstract: An inverter-charger integrated device for an electric vehicle is provided. The inverter-charger integrated device for the electric vehicle includes a motor; a power input unit; a rectifying unit; an inverter; and a control unit, wherein the inverter comprises a first group of switches including first and second switches, a second group of switches including third and fourth switches, and a third group of switches including fifth and sixth switches, the rectifying unit is directly connected to the first of the first to third groups of switches, and phases of the motor are respectively connected to the first to third group of switches.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 12, 2015
    Applicant: LSIS CO., LTD.
    Inventors: Jae Hoon JANG, Byung Woon JANG, Joong Ki JUNG, Chun Suk YANG
  • Publication number: 20150069834
    Abstract: An operating method of an inverter-charger integration device for an electric vehicle is disclosed. In the operating method, whether a charge switch and a controller area network (CAN) communication module are used is confirmed. When both the charge switch and the CAN communication module are in use, an operation mode of an inverter is determined by using a first table. When only the charge switch is in use, the operation mode of the inverter is determined by using a second table. When only the CAN communication module is in use, the operation mode of the inverter is determined by using a third table. When both the charge switch and the CAN communication module are not in use, the operation mode of the inverter is determined by using a fourth table.
    Type: Application
    Filed: September 4, 2014
    Publication date: March 12, 2015
    Applicant: LSIS CO., LTD.
    Inventors: Jae Hoon JANG, Byung Woon JANG, Joong Ki JUNG
  • Patent number: 8964476
    Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: February 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sun-Il Shim, Jae-Hoon Jang, Donghyuk Chae, Youngho Lim, Hansoo Kim, Jaehun Jeong
  • Publication number: 20150019114
    Abstract: Provided is a method of controlling an engine of an idle-stop and go (ISG) vehicle. The method includes allowing, when an engine stop condition is satisfied, the engine to idle-stop and maintaining, when an engine stop signal is transmitted from an outside, an idle-stop state of the engine although an engine restarting condition is satisfied.
    Type: Application
    Filed: April 17, 2014
    Publication date: January 15, 2015
    Applicant: LSIS CO., LTD.
    Inventor: JAE HOON JANG