Abstract: Disclosed herein are compositions useful in forming organic active patterns that may, in turn, be incorporated in organic memory devices. The compositions comprise N-containing conjugated electroconductive polymer(s), photoacid generator(s) and organic solvent(s) capable of dissolving suitable quantifies of both the electroconductive polymer and the photoacid generator. Also disclosed are methods for patterning organic active layers formed using one or more of the compositions to produce organic active patterns, portions of which may be arranged between opposed electrodes to provide organic memory cells. The methods include directly exposing and developing the organic active layer to obtain fine patterns without the use of a separate masking pattern, for example, a photoresist pattern, thereby tending to simplify the fabrication process and reduce the associated costs.

Abstract: The present disclosure relates to an organic memory device and a fabrication method thereof. The organic memory device comprises a first electrode, a second electrode, and an organic memory layer situated between the electrodes, wherein a metallic nanoparticle layer is further situated between the first electrode and the organic memory layer. Since the organic memory device may be operated using only positive voltages, a 1D1R device composed of one diode and one resistor can be realized and a passive matrix can be realized due to the 1D1R structure. Accordingly, the organic memory device enables higher integration, ultrahigh speeds, larger capacities, lower power consumption, and/or lower prices.

Abstract: Disclosed herein are an organic memory device and a method for fabricating the memory device. The organic memory device may include a first electrode, a second electrode and an organic active layer between first and second electrodes, wherein the organic active layer is formed of a mixture of a conductive polymer and a metallocene compound. Because the organic memory device possesses decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, the organic memory device may be used as a highly integrated large-capacity memory device.

Abstract: A cross-linkable polymer including 1,1?-binaphthyl repeating units linked through 6,6?-arylene groups, a cross-linked material comprising the cross-linkable polymer, an organic light emitting device including the cross-linked material, and a method of preparing the organic light emitting device are each disclosed.

Abstract: A polymer and an organic light-emitting device including the polymer are provided, wherein the polymer comprises a polymeric unit represented by the Formula: In which variables are as defined herein.

Abstract: A polymer and an organic light-emitting device including the same, wherein the polymer has a polymeric unit represented by Formula 1 below:

Abstract: Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: An organic light emitting device (OLED) includes a polymeric fluorescent light emitting material doped with a phosphorescent dopant to form a fluorescent light emitting layer. The fluorescent light emitting layer may inhibit or prevent device degradation without affecting light emission from the light emitting layer, and may improve the service life of the OLED.

Abstract: A fluoro group-containing compound, a fluoro group-containing polymer, an organic light emitting device including the polymer, and a method of manufacturing the organic light emitting device are provided.

Abstract: A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line.

Abstract: Disclosed is a chip-on-film (COF) type semiconductor package and a device using the same. The COF type semiconductor package may include an insulation substrate including a top surface and bottom surface, a semiconductor device on the top surface of the insulation substrate, a heat dissipating component on the bottom surface of the insulation substrate, and at least one space between the bottom surface of the insulation substrate and a top surface of the heat dissipating component.

Abstract: Disclosed are a method for forming an organic layer pattern which is characterized by forming a thin layer by coating a coating solution including a polyimide-based polymer having a heteroaromatic pendant group including a heteroatom in its polyimide major chain, a photoinitiator and a crosslinking agent on a substrate and drying the substrate, and exposing and developing the thin layer, an organic layer pattern prepared by the method, and an organic memory device comprising the pattern. According to example embodiments, a high-resolution micropattern may be formed without undergoing any expensive process, e.g., photoresist, leading to simplification of the preparation process and cost reduction.

Abstract: Disclosed herein are ferrocene-containing polymers in which ferrocene is conjugated to the backbone of conductive conjugated polymers. Further disclosed are organic memory devices comprising the ferrocene-containing polymers. Because the organic memory devices possess the advantages of decreased switching time, decreased operating voltage, decreased fabrication costs and increased reliability, they may be used as highly integrated large-capacity memory devices.

Abstract: Disclosed herein are organic memory devices and methods for fabricating such devices. The organic memory devices comprise a first electrode, a second electrode and an organic active layer extending between the first and second electrodes wherein the organic active layer is formed from one or more electrically conductive organic materials that contain heteroatoms and which are configured in such a manner as that the heteroatoms are available for linking or complexing metal atoms within the organic active layer. The metal ions may then be reduced to form metal filaments within the organic active layer to form a low resistance state and the metal filaments may, in turn, be oxidized to form a high resistance state and thereby function as memory devices.

Abstract: A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line.

Abstract: A semiconductor device includes stacked-gate structures including a plurality of cell gate patterns and insulating patterns alternately stacked on a semiconductor substrate and extending in a first direction. Active patterns and gate dielectric patterns are disposed in the stacked-gate structures. The active patterns penetrate the stacked-gate structures and are spaced apart from each other in a second direction intersecting the first direction, and the gate dielectric patterns are interposed between the cell gate patterns and the active patterns and extend onto upper and lower surfaces of the cell gate patterns. The active patterns share the cell gate patterns in the stacked-gate structures.

Abstract: Disclosed are a method for forming an organic layer pattern which is characterized by forming a thin layer by coating a coating solution including a polyimide-based polymer having a heteroaromatic pendant group including a heteroatom in its polyimide major chain, a photoinitiator and a crosslinking agent on a substrate and drying the substrate, and exposing and developing the thin layer, an organic layer pattern prepared by the method, and an organic memory device comprising the pattern. According to example embodiments, a high-resolution micropattern may be formed without undergoing any expensive process, e.g., photoresist, leading to simplification of the preparation process and cost reduction.

Abstract: Disclosed herein are organic memory devices and methods for fabricating such devices. The organic memory devices comprise a first electrode, a second electrode and an organic active layer extending between the first and second electrodes wherein the organic active layer is formed from one or more electrically conductive organic materials that contain heteroatoms and which are configured in such a manner as that the heteroatoms are available for linking or complexing metal atoms within the organic active layer. The metal ions may then be reduced to form metal filaments within the organic active layer to form a low resistance state and the metal filaments may, in turn, be oxidized to form a high resistance state and thereby function as memory devices.

Abstract: A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line.