Abstract: Provided are methods of manufacturing an ultra-thin inorganic semiconductor film and methods of manufacturing three-dimensional (3D) semiconductor device using the ultra-thin inorganic semiconductor film. A method of manufacturing the ultra-thin inorganic semiconductor film includes preparing a Ge substrate, forming an amorphous graphene layer on the Ge substrate, forming an ultra-thin inorganic semiconductor film on the amorphous graphene layer, and transferring the ultra-thin inorganic semiconductor film to a target substrate. The ultra-thin inorganic semiconductor film is a Si thin film or a Ge thin film and may have a thickness of 50 ?m or less.

Abstract: According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.

Abstract: A solar light concentration plate comprises a first hologram which receives solar light and diffracts incident light in a range of an incident angle, and first and second light guides respectively disposed on both sides of the first hologram, wherein at least one of the first and second light guides has an outer surface substantially inclined to an inner surface of the at least one of the first and second light guides.

Abstract: Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds.

Abstract: Provided are compounds containing a phosphorescence unit, an emitting polymer, and an organic light emitting device (OLED) containing an organic layer including the emitting polymer. The OLED is useful in portable electronic equipment where low power consumption and low driving voltage are desirable.

Abstract: Provided is a semiconductor device that includes first and second isolation patterns disposed on a substrate. Alternately stacked interlayer insulating patterns and a conductive patterns are disposed on a surface of the substrate between the first and second isolation patterns. A support pattern penetrates the conductive patterns and the interlayer insulating patterns and has a smaller width than the first and second isolation patterns. First and second vertical structures are disposed between the first isolation and the support pattern and penetrate the conductive patterns and the interlayer insulating patterns. A second vertical structure is disposed between the second isolation pattern and the support pattern and penetrates the conductive patterns and the interlayer insulating patterns. A distance between top and bottom surfaces of the support pattern is greater than a distance between a bottom surface of the support pattern and the surface of the substrate.

Abstract: Provided are a three-dimensional semiconductor device and a method of fabricating the same. The three-dimensional semiconductor device may include a mold structure for providing gap regions and an interconnection structure including a plurality of interconnection patterns disposed in the gap regions. The mold structure may include interlayer molds defining upper surfaces and lower surfaces of the interconnection patterns and sidewall molds defining sidewalls of the interconnection patterns below the interlayer molds.

Abstract: Disclosed herein is a monomer for binding nano-metal, which is useful for the preparation of a conductor having increased conductivity with ensuring flexibility and transparency. Polymerization of the monomer for binding nano-metal provides a conductive polymer composite including a nano-metal rod. A method of preparing the conductive polymer composite is also provided.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate doped with a first conductive type dopant, a plurality of stacked structures arranged side by side on the substrate and extending in a first direction, each of the stacked structures including gate electrodes spaced apart from each other, the plurality of stacked structures including a pair of stacked structures spaced apart from each other at a first interval in a second direction perpendicular to the first direction, and a pick-up region extending in the first direction in the substrate between the pair of stacked structures and doped with the first conductive type dopant.

Abstract: The present invention provides a facility for reducing radioactive material comprising: a cooling water storage unit installed inside a containment and formed to store cooling water; a boundary unit forming a boundary of radioactive material inside the containment and surrounding a reactor coolant system installed inside the containment to prevent a radioactive material from releasing from the reactor coolant system or a pipe connected with the reactor coolant system to the containment; a connecting pipe connected with an inner space of the boundary unit and the cooling water storage unit to guide a flow of a fluid caused by a pressure difference between the boundary unit and the cooling water storage unit from the boundary unit to the cooling water storage unit; and a sparging unit disposed to be submerged in the cooling water stored in the cooling water storage unit and connected with the connecting pipe to sparge the fluid that has passed through the connecting pipe and the radioactive material contained i

Abstract: A monomer for binding nano-metal, which is useful for the preparation of a conductor having increased conductivity with ensuring flexibility and transparency. Polymerization of the monomer for binding nano-metal provides a conductive polymer composite including a nano-metal rod. A method of preparing the conductive polymer composite is also provided.

Abstract: A cross-linkable polymer including 1,1?-binaphthyl repeating units linked through 6,6?-arylene groups, a cross-linked material comprising the cross-linkable polymer, an organic light emitting device including the cross-linked material, and a method of preparing the organic light emitting device are each disclosed.

Abstract: According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other.

Abstract: A solar light concentration plate comprises a first hologram which receives solar light and diffracts incident light in a range of an incident angle, and first and second light guides respectively disposed on both sides of the first hologram, wherein at least one of the first and second light guides has an outer surface substantially inclined to an inner surface of the at least one of the first and second light guides.

Abstract: An organic light emitting device (OLED) includes a polymeric fluorescent light emitting material doped with a phosphorescent dopant to form a fluorescent light emitting layer. The fluorescent light emitting layer may inhibit or prevent device degradation without affecting light emission from the light emitting layer, and may improve the service life of the OLED.

Abstract: A solar light concentration plate comprises a plurality of holograms diffracting incident light wherein each of the plurality of the holograms has a thickness, at least one intermediate light guide plate disposed between the plurality of the holograms, and a pair of external light guide plates disposed on outer surfaces of outermost holograms of the plurality of the holograms, wherein at least one of the pair of the external light guide plates has an inner surface and an outer surface inclined relative to the inner surface.

Abstract: A solar light concentration plate comprises a first hologram which receives solar light and diffracts incident light in a range of an incident angle, and first and second light guides respectively disposed on both sides of the first hologram, wherein at least one of the first and second light guides has an outer surface substantially inclined to an inner surface of the at least one of the first and second light guides.

Abstract: According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.

Abstract: A sealing inspection device includes a scan unit through which a display device substrate including a top plate coupled to a bottom plate by a sealing member in the sealed area passes; and a photographing unit through which the display device substrate which has passed through the scan unit, further passes. The scan unit generates coordinate values of the sealed area of the display device substrate, detects a defective region in the sealed area of the display device substrate, and includes a plurality of scan cameras. The photographing unit generates an image of the sealed area of the display device substrate using the generated coordinate values, measures an effective sealing width of the sealed area using the generated image, and comprises a measuring camera.

Abstract: Three-dimensional semiconductor devices may be provided. The devices may include a stack-structure including gate patterns and an insulation pattern. The stack-structure may further include a first portion and a second portion, and the second portion of the stack-structure may have a narrower width than the first portion. The devices may also include an active pattern that penetrates the stack-structure. The devices may further include a common source region adjacent the stack-structure. The devices may additionally include a strapping contact plug on the common source region.