Abstract: An array substrate device for a liquid crystal display device includes a substrate, a gate line extending along a first direction on the substrate, a data line extending along a second direction substantially perpendicular to the first direction on the substrate, a pixel region defined by a crossing of the gate and data lines, a common line extending along the first direction and spaced apart from the gate line, a common electrode having a plurality of first portions extended along the second direction from the common line to the pixel region, wherein the extended portion of the common electrode adjacent to the data line includes first and second extensions overlapping portions of the data line, a thin film transistor on the substrate at a crossing portion of the gate and data lines, the thin film transistor including source and drain electrodes, a pixel electrode extended from the drain electrode to the pixel region, and an auxiliary electrode connected to the extended portion of the common electrode adjacen

Abstract: An in-plane switching mode liquid crystal display device includes a lower substrate having pixels arranged thereon in a matrix, each pixel being defined and surrounded by a gate line and a pair of adjacent data lines crossing substantially normal to the gate line, a common line, an upper substrate having a black matrix and a color filter formed thereon, a spacer formed on the lower substrate including the region adjacent to the data lines, and a liquid crystal layer interposed between the lower substrate and the upper substrate.

Abstract: A method of fabricating a liquid crystal display device includes forming a gate electrode and a gate bus line on a transparent lower substrate, forming an insulating layer on the gate electrode and gate bus line, forming an active layer on the insulating layer, forming a source electrode, a drain electrode and a data bus line, forming a passivation layer on the transparent lower substrate, forming a refraction layer on the passivation layer, and forming a pixel electrode on a surface of the refraction layer.

Abstract: An array substrate for a liquid crystal display device includes a transparent substrate, a gate line arranged along a first direction on the transparent substrate, a gate electrode extending from the gate line, a common line arranged along the first direction adjacent to the gate line and having a protrusion, a gate insulation layer on the transparent substrate to cover the gate line, the gate electrode, and the common electrode, an active layer on the gate insulation layer and over the gate electrode, first and second ohmic contact layers on the active layer, a data line arranged along a second direction perpendicular to the first upon the gate insulation layer, a source electrode extending from the data line and contacting the first ohmic contact layer, a drain electrode spaced apart from the source electrode and contacting the second ohmic contact layer, a first capacitor electrode formed on the gate insulation layer and connected to the drain electrode, the first capacitor electrode overlapping the common

Abstract: An in-plane switching mode liquid crystal display device includes a plurality of gate lines and data lines defining a plurality of pixels, a driving device in each of the pixels, a pixel electrode in each of the pixels and a common electrode completely overlapping a data line in width.

Abstract: A thin film transistor-type optical detecting sensor includes an array substrate provided with a plurality of regions, each region including a plurality of sensor thin film transistors each generating an optical current in response to light reflected from a subject for detection, a plurality of storage capacitors each connected with a corresponding one of the plurality of sensor thin film transistors to store charge representative of the optical current, a plurality of switch thin film transistors each connected with a corresponding one of the plurality of storage capacitors for selectively outputting the stored charge, and a plurality of output lines each connected with a corresponding one of the plurality of switch thin film transistors, a backlight unit disposed beneath the array substrate to provide the light to the plurality of regions, and a drive IC including a plurality of sub-circuits, wherein an nth sub-circuit is connected with an nth output line of each region of the array substrate.

Abstract: In the method of fabricating a TFT in accordance with the present invention, a first semiconductor layer 37 to be used as a channel is formed on a portion of an insulating layer 35 in correspondence with an underlying gate electrode 33. A second semiconductor layer 34, ohmic contact layer 41 and metal layer 45 are then successively formed on the insulating layer 35 and first semiconductor layer 37. A photoresist pattern is next formed on a portion of the ohmic contact layer other than a portion corresponding to the gate electrode. The metal layer is patterned using the photoresist pattern to form source 43 and drain 45 electrodes, and the ohmic contact layer 41 and second semiconductor layer 39 are removed using the photoresist pattern as a mask, or using the source and drain electrodes as a mask, to expose portions of the insulating layer and first semiconductor layer. A passivation layer 47 is formed to cover the insulating layer, first semiconductor layer, and source and drain electrodes.

Abstract: A hybrid switching mode liquid crystal display device according to the present invention comprises first and second substrates, a gate bus line and a transparent data bus line defining unit pixel region, a common line parallel to a gate bus line in the pixel region, a TFT on the cross of a data bus line and the gate bus lines in the pixel region, a common electrode and a storage capacitor line in the pixel region, a gate insulator having holes on the gate bus line, the common electrode, and the storage capacitor lines, a passivation layer having holes on the gate insulator, a first alignment layer with a fixed alignment direction on the passivation layer, at least one counter electrode on the second substrate applying vertical and inclined electric fields with the common and data electrodes on the first substrate, a black matrix on the counter electrodes to prevent light leakage which may be generated around TFT, the gate bus lines, and the data bus lines, a color filter layer on the black matrix and the seco

Abstract: An array substrate for a liquid crystal display device includes a transparent substrate, a gate line arranged along a first direction on the transparent substrate, a gate electrode extending from the gate line, a common line arranged along the first direction adjacent to the gate line and having a protrusion, a gate insulation layer on the transparent substrate to cover the gate line, the gate electrode, and the common electrode, an active layer on the gate insulation layer and over the gate electrode, first and second ohmic contact layers on the active layer, a data line arranged along a second direction perpendicular to the first upon the gate insulation layer, a source electrode extending from the data line and contacting the first ohmic contact layer, a drain electrode spaced apart from the source electrode and contacting the second ohmic contact layer, a first capacitor electrode formed on the gate insulation layer and connected to the drain electrode, the first capacitor electrode overlapping the common

Abstract: A hybrid switching mode liquid crystal display device according to the present invention comprises first and second substrates, a gate bus line and a transparent data bus line defining unit pixel region, a common line parallel to a gate bus line in the pixel region, a TFT on the cross of a data bus line and the gate bus lines in the pixel region, a common electrode and a storage capacitor line in the pixel region, a gate insulator having holes on the gate bus line, the common electrode, and the storage capacitor lines, a passivation layer having holes on the gate insulator, a first alignment layer with a fixed alignment direction on the passivation layer, at least one counter electrode on the second substrate applying vertical and inclined electric fields with the common and data electrodes on the first substrate, a black matrix on the counter electrodes to prevent light leakage which may be generated around TFT, the gate bus lines, and the data bus lines, a color filter layer on the black matrix and the seco

Abstract: A method of manufacturing a liquid crystal panel prevents the introduction of static electricity from the exterior of a liquid crystal panel. According to the method, edges of a lower glass substrate on which a liquid crystal material layer and an upper glass substrate are disposed are dipped into an etchant. At this time, the ends of the test electrodes formed on the lower glass substrate are removed. The ends of the test electrodes are removed, and consequently an introduction path of stripe-shaped defect is not generated within the liquid crystal panel. Also, the yield of the liquid crystal panel is greatly improved.

Abstract: An array substrate and a method of manufacturing thereof are disclosed for a liquid crystal display device. The array substrate includes a substrate, a gate line disposed along a first direction on the substrate, a common line parallel to the gate line and spaced apart from the gate line, wherein the common line is made of the same material as the gate line. The array substrate also includes a gate insulating layer on the gate and common lines, a semiconductor layer on the gate insulating layer and a pixel electrode of transparent conductive material including a drain electrode portion. The drain electrode portion overlaps the semiconductor layer and a source electrode of transparent conductive material is spaced apart from the drain electrode portion. A passivation layer includes a first contact hole and an open portion over the pixel and source electrodes, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively.

Abstract: A TFT type optical detecting sensor includes a capacitor, a sensor TFT, and a switching TFT each having an active layer with a channel having an elongated width. The width of the channel of the sensor TFT is substantially defined by a distance of a side of the pixel excluding the switching source wire and sensor drain wire. The first electrode of the capacitor of the optical detecting sensor is electrically connected to the sensor gate electrode of the sensor TFT.

Abstract: A thin film transistor-type optical detecting sensor includes an array substrate provided with a plurality of regions, each region including a plurality of sensor thin film transistors each generating an optical current in response to light reflected from a subject for detection, a plurality of storage capacitors each connected with a corresponding one of the plurality of sensor thin film transistors to store charge representative of the optical current, a plurality of switch thin film transistors each connected with a corresponding one of the plurality of storage capacitors for selectively outputting the stored charge, and a plurality of output lines each connected with a corresponding one of the plurality of switch thin film transistors, a backlight unit disposed beneath the array substrate to provide the light to the plurality of regions, and a drive IC including a plurality of sub-circuits, wherein an nth sub-circuit is connected with an nth output line of each region of the array substrate.

Abstract: A fingerprint-sensing device of thin film transistor type that is capable of minimizing an insulation breakage between thin film transistor lines includes a sensor for sensing contact of a fingerprint to the sensor array and for generating a sensing signal when said fingerprint is in contact with the sensor array. In the device, a sensor array converts a light reflected from a fingerprint into a current quantity upon contact of the fingerprint. A driving voltage supply applies a driving voltage to the sensor array. A controller responds to the sensing signal from the sensor to generate control signals for controlling the driving voltage supply.

Abstract: A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.

Abstract: A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.

Abstract: A semiconductor device for a TFT includes a first semiconductor layer to be used as a channel, which is formed on a portion of an insulating layer in correspondence with an underlying gate electrode. The semiconductor device further includes a second semiconductor layer, an ohmic contact layer, and a metal layer formed on the insulating layer and the first semiconductor layer and patterned to expose portions of the insulating layer and the first semiconductor layer. The patterned metal layer forms source and drain electrodes. The semiconductor device also includes a passivation layer, which covers the insulating layer, the first semiconductor layer and the source and drain electrodes, and a pixel electrode, which contacts the drain electrode though a contact hole in the passivation layer.

Abstract: A liquid crystal display that comprises an insulating substrate, an insulating layer covering the insulating layer, a pixel electrode formed on the insulating layer, an insulating interlayer covering the pixel electrode, the insulating interlayer having a contact hole the contact hole exposing a part of the surface on the pixel electrode, a drain electrode formed on the insulating interlayer, the drain electrode connecting to the pixel electrode through the contact hole, a thin film transistor including the drain electrode, a source electrode and an active layer on the insulating interlayer, and a data line extending to the source electrode and partially overlapping the pixel electrode.

Abstract: A method of manufacturing an active matrix LCD is disclosed whereby gate bus lines, gate electrodes and source bus line segments are patterned from the same vacuum deposited first metal layer. An insulating layer, semiconductor layer, extrinsic semiconductor layer and second metal layer are then successively deposited on the substrate. A TFT channel region is formed by etching each of these layers in a second patterning process. During this step, storage capacitors may be formed by patterning the second metal layer so that it overlaps part of the gate bus lines. A transparent conductive layer is next deposited on the substrate. Pixel electrodes are then formed by patterning the transparent conductive layer in a third patterning process. Further, using a portion of the transparent conductive layer as a mask, the second metal layer and part of the extrinsic semiconductor layer are etched to form source and drain electrodes.