Abstract: A semiconductor IC device capable of power-sharing includes a first power line configured to be supplied with a first power, a second power line configured to be supplied with a second power, a switching block configured to connect the first power line with the second power line in response to a first control signal, and a power-sharing control block configured to generate the control signal in accordance with a plurality of operation command signals.

Abstract: A variable delay circuit includes at least a fixed delay unit, a first selection unit, and variable delay unit. The fixed delay unit receives an input signal and a first delay selection signal indicative of a first delay, and outputs a first delayed signal that is substantially the input signal delayed by the first delay. The first selection unit receives the input signal, the first delayed signal, and a second delay selection signal, and outputs either the input signal or the first delayed signal based on the second delay selection signal to the variable delay unit. The variable delay unit also receives a third delay selection signal indicative of a third delay, and outputs a output signal that is substantially the output signal of the selection unit delayed by a third delay. The first delay is 0 or X multiples of M delay units. The third delay is a delay selected from 0 to N delay units.

Abstract: A DLL circuit includes a common delay line configured to generate a delay locked clock by selectively delaying a source clock by one or more unit delays in response to a first delay control code or a second delay control code, a clock cycle detector configured to compare a phase of the source clock with a phase of the delay locked clock in a cycle detection mode and generate the first delay control code corresponding to a delay amount of a cycle of the source clock based on a result of comparing the phases of the source and delay locked clocks, a feedback delay configured to delay the delay locked clock and output a feedback clock, and a delay amount controller configured to compare the phase of the source clock with a phase of the feedback clock in a delay locking mode and change the second delay control code based on a result of comparing the source and feedback clocks.

Abstract: An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator, and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.

Abstract: A data alignment circuit of a semiconductor memory apparatus for receiving and aligning parallel data group includes a first control unit, a second control unit, a first alignment unit and a second alignment unit. The first alignment unit generates a first control signal group in response to an address group, a clock signal, and a latency signal. The second control unit generates a second control signal group in response to the address group, the clock signal, and the latency signal. The first alignment unit aligns the parallel data group as a first serial data group in response to the first control signal group. The second alignment unit aligns the parallel data group as a second serial data group in response to the second control signal group.

Abstract: An integrated circuit includes a delay locked loop configured to delay a reference clock signal by a delay time for delay locking and generate a delay locked clock signal, a clock transmission circuit configured to transmit the delay locked clock signal in response to a clock transmission signal, a duty correction circuit configured to perform duty correction operation on an output clock signal of the clock transmission circuit, and a clock transmission signal generation circuit configured to generate the clock transmission signal in response to a command and burst length information.

Abstract: A semiconductor memory device is able to generate an output enable signal in response to a read command and CAS latency information. The semiconductor memory device includes a delay locked loop configured to detect a phase difference of an external clock signal and a feedback clock signal, generate a delay control signal corresponding to the detected phase difference, and generate a DLL clock signal by delaying the external clock signal for a time corresponding to the delay control signal, a delay configured to output an active signal as an output enable reset signal in response to the delay control signal and an output enable signal generator configured to be reset in response to the output enable reset signal and generate an output enable signal in response to a read signal and a CAS latency signal by counting the external clock signal and the DLL clock signal.

Abstract: An internal supply voltage generating circuit includes a clock comparator configured to compare a first clock signal having clock information corresponding to a level of a reference voltage with a second clock signal having clock information corresponding to a level of an internal supply voltage, a control signal generator configured to generate a driving control voltage having a voltage level corresponding to an output signal of the clock comparator; and a driver configured to drive a terminal of the internal supply voltage in response to the driving control voltage.

Abstract: A latency control circuit includes a path calculator configured to calculate a delay value of a path that an input signal is to go through inside a chip and output the delay value as path information, a delay value calculator configured to output delay information representing a delay value for delaying the input signal based on a latency value of the input signal and the path information, and a delayer configured to delay the input signal by a delay corresponding to the delay information.

Abstract: A semiconductor memory device includes: a strobe signal reception unit configured to receive a strobe signal and generate a tracking clock signal; a clock reception unit configured to receive a clock signal and generate an internal clock signal; a plurality of data reception units configured to receive parallel data in accordance with the internal clock signal and generate internal data; and a phase control unit configured to control the phase of the internal clock signal to track the tracking clock signal and to compensate for a variation in the phase of the internal clock signal while the data is received.

Abstract: A domain crossing circuit of a semiconductor memory apparatus, the domain crossing circuit comprising first and second count signals generated at substantially a same clock period, and representing predetermined clock differences with reference to an internal clock signal with respect to same bit combination data, and a data processing unit configured to provide output data corresponding to input data based on the second count signal in response to the input data synchronized to an external clock signal.

Abstract: A phase locked loop includes a phase detector configured to compare a phase of an input clock with a phase of a feedback clock to produce a phase comparison result, an initial frequency value provider configured to detect a frequency of the input clock and provide a frequency detection result, a controller configured to generate a frequency control signal based on the phase comparison result and the frequency detection result, and an oscillator configured to generate an output clock in response to the frequency control signal.

Abstract: A sampling circuit for use in a semiconductor device, includes a first sampling unit configured to sample a data signal in synchronism with a reference clock signal and output a first output signal, a second sampling unit configured to sample a delayed data signal in synchronism with the reference clock signal and output a second output signal, and an output unit configured to combine the first and second output signals and output a sampling data signal.

Abstract: A semiconductor memory device includes: a strobe signal reception unit configured to receive a strobe signal and generate a tracking clock signal; a clock reception unit configured to receive a clock signal and generate an internal clock signal; a plurality of data reception units configured to receive parallel data in accordance with the internal clock signal and generate internal data; and a phase control unit configured to control the phase of the internal clock signal to track the tracking clock signal and to compensate for a variation in the phase of the internal clock signal while the data is received.

Abstract: A clock signal duty correction circuit includes: a first transition timing control unit configured to generate a first control signal for controlling a rising timing of a duty correction clock signal by using a clock signal; a second transition timing control unit configured to generate a second control signal for varying a falling timing of the duty correction clock signal by using the clock signal according to a code signal; and a differential buffer unit configured to generate the duty correction clock signal, whose rising time or falling time is adjusted, in response to the first control signal and the second control signal.

Abstract: A Delay Locked Loop (DLL) includes a replica delay unit configured to delay an output clock to generate a feedback clock; a phase detector configured to measure a phase difference between the feedback clock and an input clock; a quantization unit configured to quantize the phase difference measured by the phase detector; and a delay unit configured to delay the input clock based on a quantization result from the quantization unit to generate the output clock.

Abstract: An on-die termination circuit includes a reference period signal generation circuit that generates a reference period signal according to a level of a reference voltage, a first period signal generation circuit that generates a first period signal according to a voltage level of a pad, a period comparison circuit that compares a period of the first period signal with a period of the reference period signal and count a plurality of driving signals, and a driver circuit that drives the pad in response to the plurality of driving signals.

Abstract: A voltage regulator with an adaptive bandwidth, including a first buffer chain, a voltage generating unit, a trimming capacitor unit, a second buffer chain, and a control unit. The first buffer chain delays a clock signal using an external voltage as a supply voltage. The voltage generating unit generates a regulated voltage on the basis a reference voltage. The trimming capacitor unit controls a load capacitance of the voltage generating unit. The second buffer chain delays the clock signal using the regulated voltage as a supply voltage. The control unit adjusts the load capacitance by detecting a delay difference of clocks output from the first and second buffer chains.

Abstract: A voltage adjustment circuit of a semiconductor memory apparatus includes a control voltage generating unit configured to distribute an external voltage for selectively outputting a plurality of distribution voltages as a control voltage in response to a control signal, the plurality of the distribution voltages each have different voltage levels, a comparing unit configured to include a voltage supply unit configured to control an external voltage supplied to a first node and a second node if a level of an output voltage is higher than a level of a reference voltage in response to a level of the control voltage, and a detection signal generating unit configured to drop potential levels of the first and second nodes according to the levels of the output voltage and the reference voltage, and to output the potential level of the second node as a detection signal, and a voltage generating unit configured to drive the external voltage according to a potential level of the detection signal and to output the exter

Abstract: A differential signal generation circuit includes: an inverter array configured to sequentially invert an input signal to generate a plurality of delayed signals; and a phase mixer configured to mix a phase of a first delayed signal and a phase of a second delayed signal among the plurality of delayed signals at a preset mixing ratio to generate a first differential signal. The first delayed signal has a first delay from the input signal and the second delayed signal has a second delay from the input signal. The differential signal generation circuit is configured to generate a third delayed signal having a third delay from the input signal corresponding to a medium of the first and second delays, and the third delayed signal is further delayed to generate a second differential signal.