Abstract: An adjustable universal pipe fastening tool is configured such that mechanical elements, particularly fastening members such as bolts and nuts and pipes, can be easily fastened and unfastened using a single tool, thereby ensuring a convenient use. Particularly, an adjustable universal pipe fastening tool having a spanner portion is provided, which is configured to rotate, and a wrench portion, which is configured to be able to slide. The adjustable universal pipe fastening tool according to the present invention comprises: a body portion, which has a sliding hole formed on a surface thereof; a spanner portion formed on one side of the body portion so as to manage fastening and unfastening of mechanical elements; and a wrench portion formed on the other side of the body portion so as to manage fastening and unfastening of mechanical elements while sliding inside the sliding hole of the body portion.

Abstract: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region defined by a device isolation film, a bit line contact plug that is coupled to the active region and that includes a first ion implantation region buried in a first inner void, and a storage node contact plug that is coupled to the active region and includes a second ion implantation region buried in a second inner void. Although the semiconductor device is highly integrated, a contact plug is buried to prevent formation of a void, so that increase in contact plug resistance is prevented, resulting in improved semiconductor device characteristics.

Abstract: The present invention provides microstructures using crosslinked hyaluronic acid hydrogels and the method for preparing the same. The present invention for preparing microstructures using crosslinked hyaluronic acid hydrogels allows the preparation of microstructures with a uniform shape and minimum deformation. Furthermore, the microstructures made using crosslinked hyaluronic acid hydrogels in the present invention can improve skin aging, e.g. wrinkles, replenish moisture, easily absorb body fluids due to its outstanding swelling performance, provide a longer duration in the body due to its resistance against a hyaluronic acid hydrolyzing enzyme, enabling the safe delivery of effective components in the body.

Abstract: A convenient login method, apparatus and system for automatically detecting and filling in a login field within a web environment or an application are disclosed herein. The convenient login system includes a client, a server, and a terminal. The client detects an ID/PW input field within a login page when a user accesses the login page, outputs a convenient login button, outputs an input box when the user clicks on the convenient login button, and automatically enters an ID/PW in the ID/PW input field. The server receives any one of the telephone number and ID information of the terminal from the client, sends a message to the terminal, receives the ID/PW from the terminal when the mobile program is run, and sends the ID/PW to the client. The terminal runs the mobile program, recombines a segmented and stored ID/PW, and sends the recombined ID/PW to the client via the server.

Abstract: A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition.

Abstract: An adjustable universal pipe fastening tool is configured such that mechanical elements, particularly fastening members such as bolts and nuts and pipes, can be easily fastened and unfastened using a single tool, thereby ensuring a convenient use. Particularly, an adjustable universal pipe fastening tool having a spanner portion is provided, which is configured to rotate, and a wrench portion, which is configured to be able to slide. The adjustable universal pipe fastening tool according to the present invention comprises: a body portion, which has a sliding hole formed on a surface thereof; a spanner portion formed on one side of the body portion so as to manage fastening and unfastening of mechanical elements; and a wrench portion formed on the other side of the body portion so as to manage fastening and unfastening of mechanical elements while sliding inside the sliding hole of the body portion.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating a menopausal symptom, comprising cinnamic acid, shanzhiside methylester or a mixture thereof as an active ingredient. The composition of the present invention exhibits an excellent estrogenic activity, and is effectively utilized for treating or preventing diverse menopausal symptoms generated by estrogen deficiency during perimenopause, menopause and postmenopause.

Abstract: A convenient login method, apparatus and system for automatically detecting and filling in a login field within a web environment or an application are disclosed herein. The convenient login system includes a client, a server, and a terminal. The client detects an ID/PW input field within a login page when a user accesses the login page, outputs a convenient login button, outputs an input box when the user clicks on the convenient login button, and automatically enters an ID/PW in the ID/PW input field. The server receives any one of the telephone number and ID information of the terminal from the client, sends a message to the terminal, receives the ID/PW from the terminal when the mobile program is run, and sends the ID/PW to the client. The terminal runs the mobile program, recombines a segmented and stored ID/PW, and sends the recombined ID/PW to the client via the server.

Abstract: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region defined by a device isolation film, a bit line contact plug that is coupled to the active region and that includes a first ion implantation region buried in a first inner void, and a storage node contact plug that is coupled to the active region and includes a second ion implantation region buried in a second inner void. Although the semiconductor device is highly integrated, a contact plug is buried to prevent formation of a void, so that increase in contact plug resistance is prevented, resulting in improved semiconductor device characteristics.

Abstract: A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.

Abstract: A semiconductor device includes a first isolation layer formed in a trench in a substrate. The isolation layer includes a first oxide layer formed in the trench and a second oxide layer formed over the first oxide layer, wherein the first oxide layer and the second oxide layer have a same composition.

Abstract: Disclosed therein is a jog-shuttle type ratchet wrench. The jog-shuttle type ratchet wrench includes: a body part having a round hole formed at one side thereof and a stopper embedded therein; a head part rotatably mounted in the round hole; a bevel gear having a first gear portion rotatably joined to one end portion of the control roller inside the housing and a second gear portion rotatably geared with the first gear portion in interlock with the rotation of the first gear portion; a rotary shaft located inside the housing and joined to the second gear portion; and a pair of jaws having an end portion inserted into the housing, wherein the head part is selectively rotated only in one direction when the ratchet gear engages with the stopper.

Abstract: Provided is a composition for preventing or treating insomnia. The composition includes, as an active ingredient, extract of Phlomis umbrosa Turcz. or a combination thereof with extract of Polygala tenuifolia Willd. Particularly, the combination of extract of Phlomis umbrosa Turcz. with extract of Polygala tenuifolia Willd. enables recovery of the sleep of patients suffering from insomnia nearly to that of normal persons. The composition for treating insomnia uses active ingredients that have been used as Chinese traditional medicines, and thus is safe to the human body.

Abstract: An outdoor gas heater used in the field is provided. The outdoor gas heater includes a primary combustion net having a dual net structure. A wind-proof cover is provided to protect a thermocouple. Fuel gas is concentrated into a fuel gas discharge hole formed in the wind-proof cover so that an initial ignition performance is improved. A support is provided to support the outdoor gas heater from the top surface of a gas container. A fuel gas inlet tube is vertically installed between a head unit and a safety valve while being spaced apart from an adjustment handle, and a fire extinguishing safety device is provided behind the fuel gas inlet tube, so that the fire extinguishing safety device is hidden by the fuel gas inlet tube, thereby minimizing a volume of the gas heater without degrading aesthetic appearance of the gas heater.

Abstract: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including an active region defined by a device isolation film, a bit line contact plug that is coupled to the active region and that includes a first ion implantation region buried in a first inner void, and a storage node contact plug that is coupled to the active region and includes a second ion implantation region buried in a second inner void. Although the semiconductor device is highly integrated, a contact plug is buried to prevent formation of a void, so that increase in contact plug resistance is prevented, resulting in improved semiconductor device characteristics.