Abstract: Provided is a composition for preventing or treating insomnia. The composition includes, as an active ingredient, extract of Phlomis umbrosa Turcz. or a combination thereof with extract of Polygala tenuifolia Willd. Particularly, the combination of extract of Phlomis umbrosa Turcz. with extract of Polygala tenuifolia Willd. enables recovery of the sleep of patients suffering from insomnia nearly to that of normal persons. The composition for treating insomnia uses active ingredients that have been used as Chinese traditional medicines, and thus is safe to the human body.

Abstract: An outdoor gas heater used in the field is provided. The outdoor gas heater includes a primary combustion net having a dual net structure. A wind-proof cover is provided to protect a thermocouple. Fuel gas is concentrated into a fuel gas discharge hole formed in the wind-proof cover so that an initial ignition performance is improved. A support is provided to support the outdoor gas heater from the top surface of a gas container. A fuel gas inlet tube is vertically installed between a head unit and a safety valve while being spaced apart from an adjustment handle, and a fire extinguishing safety device is provided behind the fuel gas inlet tube, so that the fire extinguishing safety device is hidden by the fuel gas inlet tube, thereby minimizing a volume of the gas heater without degrading aesthetic appearance of the gas heater.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating a menopausal symptom, comprising cinnamic acid, shanzhiside methylester or a mixture thereof as an active ingredient. The composition of the present invention exhibits an excellent estrogenic activity, and is effectively utilized for treating or preventing diverse menopausal symptoms generated by estrogen deficiency during perimenopause, menopause and postmenopause.

Abstract: The present invention relates to a method for inhibiting the activity of dipeptidyl peptidase-IV (DPP-IV) and decreasing blood glucose levels.

Abstract: A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.

Abstract: A ratchet wrench is disclosed, which comprises a body unit which has a circular groove at its one side and a stop member; a head unit which includes a housing rotatably passing through a circular groove of the body unit, and a ratchet gear engaged at an outer rim of the housing and is selectively rotatable in one direction as the ratchet gear is engaged with the stop member; a worm screw which is rotatably pin-engaged in the interior of the housing; and a pair of arms of which one end of each arm is inserted into the interior of the housing and is pin-engaged therein with a thread being formed on an upper side of each arm and being engaged with the worm screw.

Abstract: The present invention relates to a composition for accelerating secretion of estrogen and regenerating tissue cells of female sexual organs, and a method for treating or preventing a disease, disorder or symptom associated with menopause. The present invention uses a composition comprising as an active ingredient an extract from Cynanchum wilfordii, an extract from Phlomis umbrosa or its combination. The composition may further comprise as an active ingredient an extract from an extract from Platycodon grandiflorum and/or an extract from Angelica gigas.

Abstract: A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.

Abstract: Forming a capacitor of a semiconductor device includes forming an interlayer dielectric having holes over a semiconductor substrate. A conductive layer is then formed on surfaces of the holes and on the upper surface of the interlayer dielectric. A silicon-containing conductive layer is formed by flowing a silicon source gas for the semiconductor substrate formed with the conductive layer, so that silicon atoms can penetrate into the conductive layer. The silicon-containing conductive layer prevents etchant from infiltrating the interlayer dielectric below the silicon-containing conductive layer.

Abstract: A MoSi2—Si3N4 composite coating which is coated on a surface of base materials. The MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a Mo2N diffusion layer by vapor-depositing of nitrogen on the surface of the base material and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the Mo2N diffusion layer, or the MoSi2—Si3N4 composite coating on the surface of the base material can be formed by forming a MoSi2 diffusion layer by vapor-depositing of silicon on a surface of a base material by the CVD method, transforming the MoSi2 diffusion layer into a Mo5Si3 diffusion layer by heating under a high-purity hydrogen or argon atmosphere, forming a MoSi2—Si3N4 composite diffusion layer by vapor-depositing of nitrogen on the surface of the MosSi3 diffusion layer by the CVD method and forming a MoSi2—Si3N4 composite coating by vapor-depositing of silicon on the surface of the MoSi2—Si3N4 composite diffusion layer.

Abstract: Forming a capacitor of a semiconductor device includes forming an interlayer dielectric having holes over a semiconductor substrate. A conductive layer is then formed on surfaces of the holes and on the upper surface of the interlayer dielectric. A silicon-containing conductive layer is formed by flowing a silicon source gas for the semiconductor substrate formed with the conductive layer, so that silicon atoms can penetrate into the conductive layer. The silicon-containing conductive layer prevents etchant from infiltrating the interlayer dielectric below the silicon-containing conductive layer.

Abstract: A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.

Abstract: A ratchet wrench is disclosed, which comprises a body unit which has a circular groove at its one side and a stop member; a head unit which includes a housing rotatably passing through a circular groove of the body unit, and a ratchet gear engaged at an outer rim of the housing and is selectively rotatable in one direction as the ratchet gear is engaged with the stop member; a worm screw which is rotatably pin-engaged in the interior of the housing; and a pair of arms of which one end of each arm is inserted into the interior of the housing and is pin-engaged therein with a thread being formed on an upper side of each arm and being engaged with the worm screw.

Abstract: A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.

Abstract: A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.

Abstract: A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.

Abstract: The present invention relates to a method for inhibiting the activity of dipeptidyl peptidase-IV (DPP-IV) and decreasing blood glucose levels.

Abstract: A method for forming a gate of a semiconductor device includes providing a polysilicon layer over a semiconductor substrate, the polysilicon having dopants. A conductive layer is formed over the polysilicon layer. The conductive layer and the polysilicon layer are etched to form a gate structure, the gate structure having a sidewall that is damaged by the etching. The sidewall of the gate structure is nitridated to compensate for the damage to the sidewall of the gate structure.

Abstract: The present invention relates to a composition for accelerating secretion of estrogen and regenerating tissue cells of female sexual organs, more particularly, to a composition for accelerating secretion of estrogen and regenerating tissue cells of female sexual organs in postmenopausal women comprising one or more of Platycodi Radix and Cynanchum wilfordii extract and/or Phlomis umbrosa extract. The present invention provides a composition, a pharmaceutical composition and a food composition capable of replacing estrogen, which comprise one or more of Platycodi Radix and Cynanchum wilfordii extracts and/or Phlomis umbrosa extract.

Abstract: The present invention relates to a composition for accelerating secretion of estrogen and regenerating tissue cells of female sexual organs, and a method for treating or preventing a disease, disorder or symptom associated with menopause. The present invention uses a composition comprising as an active ingredient an extract from Cynanchum wilfordii, an extract from Phlomis umbrosa or its combination. The composition may further comprise as an active ingredient an extract from an extract from Platycodon grandiflorum and/or an extract from Angelica gigas.