Abstract: An image sensing device may include: a substrate including a back side and a front side; imaging pixels configured to receive incident light from the back side and each structured to produce photocharge in response to the received incident light at each imaging pixel; a plurality of taps located at a depth from the front side of the substrate and configured to generate a current within the substrate and capture photocharge generated by the imaging pixels and migrated by the current, wherein the plurality of taps is distributed in the imaging pixels such that two or more of the plurality of taps are located within each imaging pixel; and a capping region formed in each imaging pixel to surround the two or more taps included in each imaging pixel, wherein a lower portion of the capping region is spaced apart from the back side by a predetermined distance.

Abstract: The image sensing device includes a semiconductor substrate; a plurality of unit pixels supported by the semiconductor substrate and arranged in a first direction and a second direction intersecting the first direction to form a pixel array, each unit pixel including a photoelectric conversion element configured to convert light incident to the photoelectric conversion element into photocharges, and a plurality of floating diffusion regions disposed over the photoelectric conversion element to receive and store the photocharges; and a plurality of transfer gates supported by the semiconductor substrate and disposed between adjacent unit pixels, and configured to isolate the adjacent unit pixels from each other and to transfer the photocharges generated by the photoelectric conversion element to the plurality of floating diffusion regions.

Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

Abstract: A photovoltaic device and a wireless charging device including the same are disclosed. In an embodiment, a photovoltaic device includes a piezoelectric module configured to receive a pressure and to generate first electrical energy by converting energy from the received pressure into the first electrical energy, and a photovoltaic module configured to receive the first electrical energy generated from the received pressure by the piezoelectric module and configured to include a single photon avalanche diode (SPAD) configured to be powered by using the first electrical energy from the piezoelectric module to generate a current signal by responding to incident light incident upon the photovoltaic module.

Abstract: Provided is a power management device including a first power domain operating in a sleep mode consuming minimal power, and a second power domain turned on exclusively when a wake signal is received from an external device within a communication range of the first power domain, wherein the first power domain includes an always-on Digital Low-DropOut (DLDO), and the second power domain includes a main Low-DropOut (LDO), and split sequence control is performed on power management in the first power domain and the second power domain.

Abstract: An image sensing device includes a substrate extending in a first direction and a second direction and including a first surface and a second surface; a plurality of unit pixel regions supported by the substrate to generate signal carriers through conversion of incident light; a plurality of circuit structures arranged to be spaced apart from each other in the first direction to generate a current in the substrate and capture the signal carriers carried by the current; a first isolation structure disposed between adjacent unit pixel regions in the substrate and extending vertically in a depth direction of the substrate while extending in the second direction; and a plurality of second isolation structures located on two opposite sides of the plurality of circuit structures in the second direction within the substrate, and arranged to extend obliquely in a depth direction in the substrate while extending in the first direction.

Abstract: An image sensing device is provided to include a first pixel including a first single-photon avalanche diode (SPAD) that includes a cathode to receive a first bias voltage; a second pixel including a second SPAD that includes an anode to receive a second bias voltage; and a selection circuit coupled to the first pixel and the second pixel and configured to select the first pixel or the second pixel to produce an output.

Abstract: An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.

Abstract: An image sensing device includes a plurality of unit pixels. Each of the plurality of unit pixels includes a photoelectric conversion region formed in a substrate and configured to generate photocharges from incident light, a control region located on one surface of the substrate and configured to correspond to each of the plurality of unit pixels, a detection region configured to capture the photocharges moving by a hole current, an isolation region configured to surround the photoelectric conversion region, and a passivation region disposed on the other surface opposite to the one surface of the substrate, wherein the hole current flows between the control region and the passivation region.

Abstract: An image sensing device includes a plurality of unit pixels, each of which includes a plurality of sub-pixels. Each of the unit pixels is structured to respond to incident light to produce photocharges indicative of detected incident light and includes sub-pixels. Each sub-pixel includes a control region configured to generate, within a substrate in which the sub-pixels are disposed, a current that carries the photocharges, a detection region spaced from the control region and configured to capture the photocharges carried by the current, a plurality of first isolation portions disposed between two adjacent sub-pixels, a second isolation portion disposed to surround the sub-pixels, and a voltage applying region disposed at a center portion of the unit pixel and configured to receive a first voltage.

Abstract: An image sensing device includes a first substrate and a second substrate. The first substrate includes a first infrared photoelectric conversion element structured to respond to infrared light to generate photocharges corresponding to an intensity of infrared light received by the first infrared photoelectric conversion element, and a color photoelectric conversion element structured to respond to visible light to generate photocharges corresponding to an intensity of visible light received by the color photoelectric conversion element. The second substrate stacked on the first substrate and configured to include a second infrared photoelectric conversion element structured to respond to infrared light to generate photocharges corresponding to an intensity of infrared light that passes through the first infrared photoelectric conversion element and is received by the second infrared photoelectric conversion element.

Abstract: Disclosed is an image sensing device, including: a plurality of pixel arrays, and the pixel arrays include: a first pixel array including a plurality of first unit pixels, and a second pixel array disposed to surround the first pixel array and including a plurality of second unit pixels, and the first unit pixel includes a plurality of photodiodes, and each photodiode of the first unit pixel is connected to a different transfer transistor.

Abstract: An image sensing device includes a pixel array including pixels, each pixel structured to respond to incident light to produce photocharges indicative of detected incident light. The pixel array includes: a first detection structure configured to include a first control node receiving a first demodulation control signal and a first detection node disposed to surround the first control node; a second detection structure configured to include a second control node receiving a second demodulation control signal and a second detection node disposed to surround the second control node; a first storage diode electrically connected to the first detection node; and a second storage diode electrically connected to the second detection node, wherein the first detection structure and the second detection structure are disposed at two opposing vertices of a pixel, respectively, to face each other in a diagonal direction within the pixel.

Abstract: A protector for installation on a floor includes: a guard part comprising a contact surface portion having first screw through-holes formed therethrough, a middle portion which is coupled upward from the edge of the contact surface portion to be primarily impacted, and wing portions integrally coupled to both sides of the middle portion, respectively; a base part having third screw through-holes formed therethrough so as to be fixed to a floor surface while being brought into contact with the floor surface; an intermediate body disposed between the guard part and the base part and having second screw through-holes formed therethrough; and stud bolts passing through the guard part, the intermediate body, and the base part so as to fix the base part to the floor surface, wherein when an external force is applied, the elastic and flexible intermediate body is compressed in a collision direction to effectively reduce the impact.

Abstract: The present application relates to a vector for delivering an active agent to the nervous system. In one embodiment of the present application, a vector for delivering an active agent in which one or more TTR ligands are conjugated to the surface of an adeno-associated virus is provided.

Abstract: A display device prevents cracks from spreading to an active area. The display device includes a substrate including an active area and a non-active area having a bending area, a thin-film transistor disposed in the active area, a light-emitting element disposed in the active area and connected to the thin-film transistor, an encapsulation layer disposed on the light-emitting element, a touch sensor disposed on the encapsulation layer, a touch pad disposed in the non-active area, a first routing line connecting the touch sensor to the touch pad via a second routing line in the bending area, and a crack prevention layer disposed on the second routing line in the bending area. Thus, the crack prevention layer is capable of preventing the occurrence of cracks in the bending area BA, thus preventing cracks from spreading to the active area AA.

Abstract: An image sensing device includes a first detection structure and a second detection structure, each of the first detection structure and the second detection structure configured to generate a current in a substrate and to capture photocharges generated by incident light and carried by the current, wherein each of the first detection structure and the second detection structure includes: at least one detection node configured to capture the photocharges, the at least one detection node including first conductive impurities; and a potential adjustment region overlapping at least a portion of each of the at least one detection node, the potential adjustment region including second conductive impurities different from the first conductive impurities.

Abstract: An image sensor includes: a unit pixel configured to output pixel data in response to a drive signal being input to the unit pixel; and a control circuit configured to provide the unit pixel with a first drive signal and a second drive signal each having a first phase, and a third drive signal having a second phase with a phase difference of 180 degrees with respect to the first phase in a first mode, the control circuit providing the unit pixel with the first drive signal having the first phase, the second drive signal having the second phase, and the third drive signal having a deactivation voltage in a second mode.

Abstract: An image sensing device includes a semiconductor substrate, a photoelectric conversion region structured to generate charge carriers from incident light and capture the charge carriers using an electric potential difference caused by a demodulation control signal applied to the photoelectric conversion region, and a circuit region disposed adjacent to the photoelectric conversion region, the circuit region including a plurality of pixel transistors that generate and output a pixel signal corresponding to the charge carriers captured by the photoelectric conversion region. The circuit region includes a first well region formed to have a first length in a first direction, and a second well region formed below the first well region such that a lower end of the first well region is in contact with an upper end of the second well region, and formed to have a second length shorter than the first length in the first direction.

Abstract: An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.