Abstract: A land mobile radio system receives paging messages communicated via a paging service communication protocol, decodes the paging messages to identify respective target recipients of the paging messages and determines whether the target recipients are members of a user group. If a target recipient is a member of the user group, a communication unit (e.g., radio or console) of the target recipient is identified, the message is converted to an appropriate protocol (e.g., a wireless protocol) and sent to the communication unit.

Abstract: Display of menu items on a display of an electronic device, such as a cellphone or other portable device, is managed by defining first and second menus including respective first and second groups of menu items (e.g., graphic icons and/or text), wherein the first group of menu items is a subset of the second group of menu items. The device transitions from display of the first menu to display of the second menu responsive to user activation of a menu expansion function. Menu items may be organized responsive to user input.

Abstract: The present invention provides methods to treat or prevent neoplasia disorders in a mammal using a combination of a matrix metalloproteinase inhibitor and an antineoplastic agent.

Abstract: The present invention provides methods to treat or prevent neoplasia disorders in a mammal using a combination of a cyclooxygenase-2 inhibitor and an antineoplastic agent.

Abstract: An upright cleaning device comprising, an actuator for receiving a user input, an upper assembly, a base assembly, a rear wheel mounted to the base assembly, configured to support the rear portion of the base assembly, and a drive mechanism located in the base assembly. The actuator is mounted to upper assembly, and the upper assembly is pivotally mounted to the base assembly. The drive mechanism has its major diameter in contact with a surface to be cleaned, and the drive mechanism is configured to operate at one of: full speed in one direction, no speed and full speed in the opposite direction, according to the relative position of the actuator.

Abstract: An integrated circuit (IC) may include a substrate, a first dielectric layer adjacent the substrate, and at least one trench in the first dielectric layer. The IC may also include a metal liner within the at least one trench, and a first conductive region including copper within the at least one trench. A cap layer including metal may be provided on the first conductive region. A second dielectric layer may be over the first conductive region and the cap layer. A dielectric etch stop and diffusion barrier layer may be over the second dielectric layer, and a via may be over the first conductive region and through the second dielectric layer and the cap layer. A diffusion barrier layer may be on sidewalls of the via, and an alloy seed layer including copper and at least one of tantalum, molybdenum, chromium, and tungsten may be over the diffusion barrier.

Abstract: The present invention is directed to a method of milling small quantities of one or more candidate compounds to reduce the particle size of at least one candidate compound to about 2 microns or less. The apparatus used for the milling process can be one or more multi-well plates, or any other suitable apparatus. The resultant products are dispersions of nanoparticulate candidate compounds. The method is particularly suited for increasing the effectiveness of high throughput screening (“HTS”).

Abstract: The present invention is directed to nanoparticulate compositions comprising nystatin. The nystatin particles of the composition have an effective average particle size of less than about 2000 nm.

Abstract: A coupler for coupling an accessory to a dipper arm and a control system for such a coupler. The invention concerns a quick hitch coupler for coupling an accessory to a dipper arm of a back actor such as may be used by an earth working apparatus. The quick hitch coupler comprises a body member adapted for coupling to the dipper arm, a fixed engaging means mounted on the body member for engaging a first one of a pair of coupling pins mounted on the accessory, and a moveable engaging means mounted on the body member for engaging a second one of the pair of coupling pins of the accessory. The invention also relates to a control system for controlling the release of an accessory from any quick hitch coupler coupling the accessory to a hydraulically operable arm of a machine, operated by a pressurized hydraulic system.

Abstract: Systems and methods for providing fractional bandwidth communication channels in classes of service that do not normally support these types of channels. In one embodiment, a method comprises receiving one or more frames, wherein each frame contains non-QoS header information, classifying the one or more frames based on the corresponding non-QoS header information and scheduling delivery of the one or more frames based upon corresponding frame classifications, wherein frames in classifications corresponding to QoS circuits are scheduled in a manner that meets QoS requirements associated with the QoS circuits. When the frames are classified, they are forwarded to dynamically allocated queues corresponding to the respective classifications. Frames are scheduled for delivery from the queues according to a modified bin-filling algorithm that is designed to meet the QoS requirements of the respective circuits. This method may be implemented, for example, in a Fibre Channel Class 2 or Class 3 fabric.

Abstract: A land mobile radio system receives paging messages communicated via a paging service communication protocol, decodes the paging messages to identify respective target recipients of the paging messages and determines whether the target recipients are members of a user group. If a target recipient is a member of the user group, a communication unit (e.g., radio or console) of the target recipient is identified, the message is converted to an appropriate protocol (e.g., a wireless protocol) and sent to the communication unit.

Abstract: A method for making an integrated circuit device includes forming at least one interconnect structure adjacent a substrate by forming at least one barrier layer, forming a doped copper seed layer on the at least one barrier layer, and forming a copper layer on the doped copper seed layer. The method may further include annealing the integrated circuit device after forming the copper layer to diffuse the dopant from the doped copper seed layer into grain boundaries of the copper layer. The doped copper seed layer may include at least one of calcium, cadmium, zinc, neodymium, tellurium, and ytterbium as a dopant to provide the enhanced electromigration resistance. Forming the copper layer may comprise plating the copper layer. In addition, forming the copper layer may comprise forming the copper layer to include at least one of calcium, cadmium, zinc, neodymium, tellurium, and ytterbium as a dopant.

Abstract: A check valve arrangement utilizes a disc (15) for a valve member while eliminating the need for a ball. A valve seat in the common sense is unnecessary, too. Instead, a substantially flat surface (13) interacts with the disc (15). In order to allow unidirectional flow only, the disc (15) is biased toward the surface (13) by means of an elastic bias ring (17) which itself is held in place by a retainer (6) extending through the center hole (16) of the disc (15) and thereby axially guiding the disc (15). If desired, the flat surface (13) can be supplemented with an embedded sealing ring 18 to provide optimum sealing properties without precise machining of the surface (13). By designing the disc (15) and the retainer (6) in rotational symmetry, a directional adjustment of the parts is made unnecessary.

Abstract: A method for making an integrated circuit device includes forming at least one interconnect structure adjacent a semiconductor substrate and including a copper portion and at least one barrier layer adjacent to the copper portion, and displacement plating surface portions of the copper portion with a plating metal more noble than copper and different than copper. The method including displacement plating provides selective and self-limiting thickness plating and enhances the electromigration resistance of the interconnect structure. The displacement plating may include subjecting the copper portion to a plating bath including the plating metal. Because displacement plating is used and is not an electroless plating process, the concentration of the metal in the aqueous plating bath and the plating time are not critical. The method may further include annealing the integrated circuit device after the displacement plating to diffuse the plating metal into the copper portion.

Abstract: A check valve arrangement utilizes a disc (15) for a valve member while eliminating the need for a ball. A valve seat in the common sense is unnecessary, too. Instead, a substantially flat surface (13) interacts with the disc (15). In order to allow unidirectional flow only, the disc (15) is biased toward the surface (13) by means of an elastic bias ring (17) which itself is held in place by a retainer (6) extending through the center hole (16) of the disc (15) and thereby axially guiding the disc (15).

Abstract: A locked connection comprises a circular groove around a pin or inside member. A box or outside member provides a series of passages tangential to the groove in a made up position of the box and pin. One or more locking pins extend through the passages. When the box and pin tend to move relative to each other, the locking pin is placed in shear in a path extending along the long dimension of the pin whereby a large shear area is provided by a small diameter locking pin.

Abstract: An improved gate electrode provides greater tolerances to higher temperature annealing treatments, and is useful in connection with the formation of self-aligned contacts as are needed for high density embedded DRAM applications. Consistent with one embodiment, a process for manufacturing a polycide transistor gate electrode involves forming a cap dielectric and dielectric spacer, with the electrode exhibiting a reduced diffusion transport of dopants between an underlying doped polysilicon layer and an overlying suicide layer. The reduced transport results from the presence of a thin barrier layer between the doped polysilicon layer and silicide layer, and the gate electrode process forms a thermally-oxidized thin polysilicon side-wall film against the polysilicon layer, the barrier layer, the silicide layer, and the cap dielectric layer. The polysilicon side-wall film is used for blocking substantial oxidation of the barrier film.

Abstract: For downwardly-scaled semiconductor processing, high-conductivity metal diffusion is blocked using extremely thin barrier films/layers. Diffusion of a highly-conductive metal is minimized using a dielectric barrier layer positioned a distance under the high-conductivity metal and a distance above the active regions of a semiconductor device. According to one embodiment, a semiconductor device also includes a highly-conductive metal interconnect patterned over a conductive partial diffusion barrier and adhesion promoting film. An underlying dielectric barrier layer against diffusion of the metal interconnect is formed above the active area but not in direct contact with the metal interconnect and is used to block diffusion that is not blocked by the partial diffusion barrier and adhesion promoting film. In a more specific embodiment, the metal interconnect is coated on the upper surface and edges with a thin electrolessly deposited partial barrier film, such as nickel or cobalt.

Abstract: An integrated circuit includes a substrate, at least one dielectric layer adjacent the substrate, and an interconnect structure in the at least one dielectric layer and comprising a copper portion and a barrier layer between the copper portion and adjacent portions of the at least one dielectric layer. Moreover, the barrier layer preferably comprises at least one of rhodium, ruthenium and rhenium. These materials are virtually insoluble and immiscible in copper, and can be readily deposited by electroless deposition, for example. The barrier layer may be in contact with the adjacent portions of the at least one dielectric layer. In addition, at least one other barrier layer can be provided between the barrier layer and the copper portion. The interconnect structure in some embodiments may extend both laterally and vertically within the at least one dielectric layer.

Abstract: The present invention provides combinations of a DNA topoisomerase I inhibiting agent and a selective COX-2 inhibiting agent for preventing, treating, and/or reducing the risk of developing a neoplasia disorder in a mammal.