Abstract: An integrated circuit including a bipolar transistor with improved forward second breakdown is disclosed. In one embodiment, the bipolar transistor includes a base, a collector, a plurality of emitter sections coupled to a common emitter and a ballast emitter for each emitter section. Each ballast resistor is coupled between the common emitter and an associated emitter section. The size of each ballast resistor is selected so that the size of the ballast resistors vary across a two dimensional direction in relation to a lateral surface of the bipolar transistor.

Abstract: An integrated circuit having a MOS structure with reduced parasitic bipolar transistor action. In one embodiment, a MOS integrated circuit device comprises a substrate having a working surface, at least one body region and for each body region a source and a layer of narrow band gap material. Each body region is formed in the substrate proximate the working surface of the substrate. Each layer of narrow band gap material is positioned in a portion of its associated body region and proximate the working surface of the substrate. Each layer of narrow band gap material has a band gap that is narrower than the band gap of the substrate in which each of the body regions are formed. Each source region is formed in an associated body region. At least a portion of each source region is also formed in an associated layer of narrow band gap material.

Abstract: An improved base for a NPN bipolar transistor. The base region is formed with Boron and Indium dopants for improved beta early voltage product and reduced base resistance.

Abstract: In a semiconductor substrate having a top surface and a PN junction between a first region of one conductivity type formed by masked diffusion into a semiconductor from the surface and a second region of opposite conductivity type formed into a first portion of the first region from the surface, the improvement comprises one edge of the first region being spaced from the edge of the second region such that the doping concentration of the first region at the surface intersection of the four corners of the junction between the first and second regions is lower than it is at some other location in the region.

Abstract: An N type buried layer is formed, in one embodiment, by a non selective implant on the surface of a wafer and later diffusion. Subsequently, the wafer is masked and a selective P type buried layer is formed by implant and diffusion. The coefficient of diffusion of the P type buried layer dopant is greater than the N type buried layer dopant so that connections can be made to the P type buried layer by P wells which have a lower dopant concentration than the N buried layer.

Abstract: In a lateral DMOS device 10 breakdown voltage is controlled by a voltage divider 50 coupled at opposite ends to the source 18 and drain 19. The divider node N1 between first and second resistive elements R1, R2 is connected to a second level conductive shield M2. ILD layer 34 isolates the shield M2 from first level conductive M1 contacts.

Abstract: An N type buried layer is formed, in one embodiment, by a non selective implant on the surface of a wafer and later diffusion. Subsequently, the wafer is masked and a selective P type buried layer is formed by implant and diffusion. The coefficient of diffusion of the P type buried layer dopant is greater than the N type buried layer dopant so that connections can be made to the P type buried layer by P wells which have a lower dopant concentration than the N buried layer.

Abstract: An N type buried layer is formed, in one embodiment, by a non selective implant on the surface of a wafer and later diffusion. Subsequently, the wafer is masked and a selective P type buried layer is formed by implant and diffusion. The coefficient of diffusion of the P type buried layer dopant is greater than the N type buried layer dopant so that connections can be made to the P type buried layer by P wells which have a lower dopant concentration than the N buried layer.

Abstract: An integrated circuit having a high voltage lateral MOS with reduced ON resistance. In one embodiment, the integrated circuit includes a high voltage lateral MOS with an island forned in a substrate, a source, a gate and a first and second drain extension. The island is doped with a low density first conductivity type. The source and drain contact are both doped with a high density second conductivity type. The first drain extension is of the second conductivity type and extends laterally from under the gate past the drain contact. The second drain extension is of the second conductivity type and extends laterally from under the gate toward the source. A portion of the second drain extension overlaps the first drain extension under the gate to form a region of increased doping of the second conductivity type.

Abstract: Apparatus and Methods for the self-alignment of separated regions in a lateral MOSFET of an integrate circuit. In one embodiment, a method comprising, forming a relatively thin dielectric layer on a surface of a substrate. Forming a first region of relatively thick material having a predetermined lateral length on the surface of the substrate adjacent the relatively thin dielectric layer. Implanting dopants to form a top gate using a first edge of the first region as a mask to define a first edge of the top gate. Implanting dopants to form a drain contact using a second edge of the first region as a mask to define a first edge of the drain contact, wherein the distance between the top gate and drain contact is defined by the lateral length of the first region.

Abstract: The present invention relates to an integrated circuit having a MOS capacitor. In one embodiment, a method of forming an integrated circuit comprises forming an oxide layer on a surface of a substrate, the substrate having a plurality of isolation islands. Each isolation island is used in forming a semiconductor device. Patterning the oxide layer to expose predetermined areas of the surface of the substrate. Depositing a nitride layer overlaying the oxide layer and the exposed surface areas of the substrate. Implanting ions through the nitride layer, wherein the nitride layer is an implant screen for the implanted ions. Using the nitride layer as a capacitor dielectric in forming a capacitor. In addition, performing a dry etch to form contact openings that extend through the layer of nitride and through the layer of oxide to access selected device regions formed in the substrate.

Abstract: The present invention relates to an integrated circuit having a sealed nitride layer. In one embodiment, a method of forming a sealing nitride layer overlaying a silicon oxide layer in a contact opening of an integrated circuit is disclosed. The method comprises, forming a second layer of nitride overlaying a first layer of nitride to form the sealing nitride layer. The second layer of nitride further overlays an exposed portion of a surface of a substrate in the contact opening and sidewalls of the contact opening. Using reactive ion etching (RIE etch) without a mask to remove a portion of the second nitride layer adjacent the surface of the substrate in the contact opening to expose a portion of the surface of the substrate in the contact opening without removing portions of the second nitride layer covering the sidewalls of the contact opening.

Abstract: In a semiconductor substrate having a top surface and a PN junction between a first region of one conductivity type formed by masked diffusion into a semiconductor from the surface and a second region of opposite conductivity type formed into a first portion of the first region from the surface, the improvement comprises one edge of the first region being spaced from the edge of the second region such that the doping concentration of the first region at the surface intersection of the four corners of the junction between the first and second regions is lower than it is at some other location in the region.

Abstract: An integrated circuit having a high voltage lateral MOS with reduced ON resistance. In one embodiment, the integrated circuit includes a high voltage lateral MOS with an island formed in a substrate, a source, a gate and a first and second drain extension. The island is doped with a low density first conductivity type. The source and drain contact are both doped with a high density second conductivity type. The first drain extension is of the second conductivity type and extends laterally from under the gate past the drain contact. The second drain extension is of the second conductivity type and extends laterally from under the gate toward the source. A portion of the second drain extension overlaps the first drain extension under the gate to form a region of increased doping of the second conductivity type.

Abstract: An integrated circuit having a MOS structure with reduced parasitic bipolar transistor action. In one embodiment, a MOS integrated circuit device comprises a substrate having a working surface, at least one body region and for each body region a source and a layer of narrow band gap material. Each body region is formed in the substrate proximate the working surface of the substrate. Each layer of narrow band gap material is positioned in a portion of its associated body region and proximate the working surface of the substrate. Each layer of narrow band gap material has a band gap that is narrower than the band gap of the substrate in which each of the body regions are formed. Each source region is formed in an associated body region. At least a portion of each source region is also formed in an associated layer of narrow band gap material.

Abstract: An integrated circuit having a high voltage lateral MOS with reduced ON resistance. In one embodiment, the integrated circuit includes a high voltage lateral MOS with an island formed in a substrate, a source, a gate and a first and second drain extension. The island is doped with a low density first conductivity type. The source and drain contact are both doped with a high density second conductivity type. The first drain extension is of the second conductivity type and extends laterally from under the gate past the drain contact. The second drain extension is of the second conductivity type and extends laterally from under the gate toward the source. A portion of the second drain extension overlaps the first drain extension under the gate to form a region of increased doping of the second conductivity type.

Abstract: A high voltage lateral semiconductor device for integrated circuits with improved breakdown voltage. The semiconductor device comprising a semiconductor body, an extended drain region formed in the semiconductor body, source and drain pockets, a top gate forming a pn junction with the extended drain region, an insulating layer on a surface of the semiconductor body and a gate formed on the insulating layer. In addition, a higher-doped pocket of semiconductor material is formed within the top gate region that has a higher integrated doping than the rest of the top gate region. This higher-doped pocket of semiconductor material does not totally deplete during device operation. Moreover, the gate controls, by field-effect, a flow of current through a channel formed laterally between the source pocket and a nearest point of the extended drain region.

Abstract: SUMMARY

Abstract: Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle wafer. The diffused layer may originate in the device handle, in the handle wafer, in the bond oxide or in an additional semiconductor layer of polysilicon or epitaxial silicon. The methods use a thermal bond oxide or a combination of a thermal and deposited oxide.

Abstract: Integrated circuits, semiconductor devices and methods for making the same are described. Each embodiment shows a diffused, doped backside layer in a device wafer that is oxide bonded to a handle wafer. The diffused layer may originate in the device wafer, in the handle wafer, in the bond oxide or in an additional semiconductor layer of polysilicon or epitaxial silicon. The methods use a thermal bond oxide or a combination of a thermal and a deposited oxide.