Abstract: An extreme ultra-violet lithographic apparatus for imaging a pattern onto a substrate includes a radiation system constructed and arranged to provide a beam of an extreme ultra-violet radiation, and an absorber arranged in the beam and constructed and arranged to absorb at least a portion of the radiation beam. The absorber has a volume configured to accommodate a flow of an absorbing gas. The flow is directed in a transverse direction with respect to the beam. The absorber includes a structure having an extreme ultra-violet radiation-transmissive beam entry area and an extreme ultra-violet radiation-transmissive beam exit area. The apparatus also includes a gas inlet actuator array configured to inject the gas into the volume and a gas outlet actuator array arranged to evacuate the gas from the volume.

Abstract: An illumination system includes a housing, and an optical system located within the housing. The optical system includes at least one optical element. The optical system is constructed and arranged to illuminate a patterning device with a radiation beam diverging from an intermediate focus. The intermediate focus is located at a position substantially at the same level or below a bottom portion of the illumination system.

Abstract: A lithographic double exposure processing method for providing to a device layer a pattern comprises the steps of expanding each feature of a first mask pattern and second mask pattern with a preselected dilatation distance before the first and second exposure steps, resist-processing the exposed radiation sensitive layer of a substrate to provide resist-processed features corresponding to said pattern whereby each resist-processed feature is expanded with respect to its nominal size, and shrinking said resist-processed features over a preselected shrinking distance by applying supplementary resist-processing to said resist-processed features.

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract: A lithographic apparatus comprises an illumination system for providing a projection beam of radiation and a support structure for supporting a patterning device which impart the projection beam with a pattern in its cross-section. The patterning device has a non-flat critical dimension (CD) profile across its width. A projection system projects the patterned beam onto a target portion of a substrate. Dose variation device for varying the radiation dose across the width of the target portion compensates for the non-flat CD profile of the patterning device.

Abstract: A lithographic apparatus comprises an illumination system for providing a projection beam of radiation, a support structure for supporting patterning device, the patterning device serving to transmit or reflect radiation in the projection beam and impart the projection beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned beam onto a target portion of the substrate. A sensor is provided for measuring the spatial intensity distribution of the projection beam at the substrate. The spatial distribution of transmission or reflectance of the patterning device, together with the distribution of the projection beam incident on the patterning device, may be determined from the measured intensity distribution. By comparing the transmission or reflectance from regions having identical patterns the overall (macroscopic) distribution of the transmission or reflectance of the patterning device can be determined.

Abstract: A lithographic double exposure processing method for providing to a device layer a pattern comprises the steps of expanding each feature of a first mask pattern and second mask pattern with a preselected dilatation distance before the first and second exposure steps, resist-processing the exposed radiation sensitive layer of a substrate to provide resist-processed features corresponding to said pattern whereby each resist-processed feature is expanded with respect to its nominal size, and shrinking said resist-processed features over a preselected shrinking distance by applying supplementary resist-processing to said resist-processed features.

Abstract: A lithographic projection system has an illumination system. A plurality of directing elements reflect different sub-beams of an incident projection beam into adjustable, individually controllable directions. By using of re-directing optics any desired spatial intensity distribution of the projection beam can be produced in its cross-sectional plane.

Abstract: A lithographic projection system has an illumination system. A plurality of directing elements reflect different sub-beams of an incident projection beam into adjustable, individually controllable directions. By using of re-directing optics any desired spatial intensity distribution of the projection beam can be produced in its cross-sectional plane.