Patents by Inventor Jan Visser

Jan Visser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective Deposition And Etching Of Metal Pillars Using AACVD And An Electrical Bias
    Publication number: 20180350604
    Abstract: Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.
    Type: Application
    Filed: May 30, 2018
    Publication date: December 6, 2018
    Inventors: Robert Jan Visser, Prerna Goradia, Tapash Chakraborty, Ranga Rao Arnepalli, Darshan Thakare, Geetika Bajaj
  • Selective Deposition Of Silicon Using Deposition-Treat-Etch Process
    Publication number: 20180350597
    Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.
    Type: Application
    Filed: June 6, 2018
    Publication date: December 6, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Rui Cheng, Fei Wang, Abhijit Basu Mallick, Robert Jan Visser
  • NANOSTRUCTURED FLAT LENSES FOR DISPLAY TECHNOLOGIES
    Publication number: 20180348548
    Abstract: Embodiments described herein relate to display devices, e.g., virtual and augmented reality displays and applications. In one embodiment, a planar substrate has stepwise features formed thereon and emitter structures formed on each of the features. An encapsulating layer is disposed on the substrate and a plurality of uniform dielectric nanostructures are formed on the encapsulating layer. Virtual images generated by the apparatus disclosed herein provide for improved image clarity by reducing chromatic aberrations at an image plane.
    Type: Application
    Filed: May 30, 2018
    Publication date: December 6, 2018
    Inventors: Robert Jan VISSER, Avishek GHOSH
  • WAVEGUIDE FABRICATION WITH SACRIFICIAL SIDEWALL SPACERS
    Publication number: 20180348429
    Abstract: Embodiments described herein relate to apparatus and methods for display structure fabrication. In one embodiment, a waveguide structure having an input grating structure and an output grating structure is fabricated and a spacer material is deposited on the waveguide. The spacer material is etched from various portions of the waveguide structure and a high refractive index material is deposited on the waveguide. Portions of the spacer material remaining on the waveguide structure are removed leaving the high refractive index material disposed on desired surfaces of the waveguide structure.
    Type: Application
    Filed: May 30, 2018
    Publication date: December 6, 2018
    Inventors: Michael Yu-tak YOUNG, Wayne MCMILLAN, Rutger THIJSSEN, Robert Jan VISSER
  • Aerosol Assisted CVD For Industrial Coatings
    Publication number: 20180347039
    Abstract: Embodiments of the disclosure relate to methods of depositing industrial coating on a substrate or process parts. More particularly, embodiments of the disclosure are directed to methods of depositing metals, metal oxides, metal nitrides and/or metal fluorides on surfaces comprised of metals, ceramics, or organic materials. In some embodiments, a metal-containing precursor can be aerosolized with an organic solvent and exposed to a substrate processing chamber where the organic solvent can be evaporated to adsorb the metal-containing precursor. The adsorbed precursor can be decomposed or reacted to form the metal-containing film.
    Type: Application
    Filed: May 10, 2018
    Publication date: December 6, 2018
    Inventors: Ranga Rao Arnepalli, Robert Jan Visser, Geetika Bajaj, Prerna Goradia
  • Selective Molecular Layer Deposition Of Organic And Hybrid Organic-Inorganic Layers
    Publication number: 20180342388
    Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.
    Type: Application
    Filed: May 22, 2018
    Publication date: November 29, 2018
    Inventors: Tapash Chakraborty, Robert Jan Visser, Prerna Goradia
  • LOW TEMPERATURE SELECTIVE EPITAXIAL SILICON DEPOSITION
    Publication number: 20180308685
    Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (“SAM”) is used to achieve selective epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises exposing a substrate to a self-assembled monolayer (“SAM”) forming molecule to selectively deposit a SAM film on an exposed dielectric material, wherein the substrate comprises the exposed dielectric material and an exposed silicon material. The SAM forming molecule is a chlorosilane molecule. The method further comprises epitaxially and selectively depositing a silicon-containing material layer on the exposed silicon material at a temperature of 400 degrees Celsius or lower. The method further comprises removing the SAM film from the exposed dielectric material.
    Type: Application
    Filed: April 11, 2018
    Publication date: October 25, 2018
    Inventors: Geetika BAJAJ, Prerna Sonthalia GORADIA, Robert Jan VISSER
  • FLOWABLE GAPFILL USING SOLVENTS
    Publication number: 20180298492
    Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.
    Type: Application
    Filed: May 14, 2018
    Publication date: October 18, 2018
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Ranga Rao Arnepalli, Darshan Thakare, Abhijit Basu Mallick, Pramit Manna, Robert Jan Visser, Prerna Sonthalia Goradia, Nilesh Chimanrao Bagul
  • SLURRY FOR POLISHING OF INTEGRATED CIRCUIT PACKAGING
    Publication number: 20180277384
    Abstract: A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.
    Type: Application
    Filed: March 23, 2017
    Publication date: September 27, 2018
    Inventors: Ranga Rao Arnepalli, Prerna Goradia, Prayudi Lianto, Jie Zeng, Arvind Sundarrajan, Robert Jan Visser, Guan Huei See
  • SELECTIVE PORESEAL DEPOSITION PREVENTION AND RESIDUE REMOVAL USING SAM
    Publication number: 20180261500
    Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.
    Type: Application
    Filed: March 7, 2017
    Publication date: September 13, 2018
    Inventors: Geetika Bajaj, Tapash Chakraborty, Prerna Sonthalia Goradia, Robert Jan Visser, Bhaskar Kumar, Deenesh Padhi
  • Selective poreseal deposition prevention and residue removal using SAM
    Patent number: 10074559
    Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: September 11, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Geetika Bajaj, Tapash Chakraborty, Prerna Sonthalia Goradia, Robert Jan Visser, Bhaskar Kumar, Deenesh Padhi
  • Slurry and Slurry Delivery Technique for Chemical Mechanical Polishing of Copper
    Publication number: 20180236633
    Abstract: A method of polishing includes bringing a metal layer of a substrate into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, and while the metal layer is in contact with the polishing pad and the substrate is moving relative to the polishing pad, alternating between supplying a first polishing liquid and a second polishing liquid to an interface between the metal layer. The first polishing liquid is abrasive-free and includes an oxidizer, and the second polishing liquid includes abrasive particles and a complexing compound to complex with ions of the metal of the metal layer.
    Type: Application
    Filed: April 3, 2017
    Publication date: August 23, 2018
    Inventors: Ranga Rao Arnepalli, Sudhanshu Singh, Darshan Thakare, Prerna Goradia, Robert Jan Visser
  • SELF-LIMITING ATOMIC THERMAL ETCHING SYSTEMS AND METHODS
    Publication number: 20180226278
    Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.
    Type: Application
    Filed: February 6, 2017
    Publication date: August 9, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Ranga Rao Arnepalli, Prerna Sonthalia Goradia, Robert Jan Visser, Nitin Ingle, Mikhail Korolik, Jayeeta Biswas, Saurabh Lodha
  • Self-limiting atomic thermal etching systems and methods
    Patent number: 10043684
    Abstract: Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: August 7, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Ranga Rao Arnepalli, Prerna Sonthalia Goradia, Robert Jan Visser, Nitin Ingle, Mikhail Korolik, Jayeeta Biswas, Saurabh Lodha
  • Flowable gapfill using solvents
    Patent number: 10017856
    Abstract: Systems and methods for forming films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a liquid solution made from a solvent and a deposition precursor. A carrier gas may be flowed through the liquid solution and push the droplets toward a substrate placed in a substrate processing region. The droplets pass into the substrate processing region and chemically react with the substrate to form films. The temperature of the substrate may be maintained below the boiling temperature of the solvent during film formation. The solvent imparts a flowability to the forming film and enable the depositing film to flow along the surface of a patterned substrate during formation prior to solidifying. The flowable film results in bottom-up gapfill inside narrow high-aspect ratio gaps in the patterned substrate.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: July 10, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ranga Rao Arnepalli, Darshan Thakare, Abhijit Basu Mallick, Pramit Manna, Robert Jan Visser, Prerna Sonthalia Goradia, Nilesh Chimanrao Bagul
  • COLLIMATED OLED LIGHT FIELD DISPLAY
    Publication number: 20180166616
    Abstract: The present disclosure generally relates to light field displays and methods of displaying images with light field arrays. In one example, the present disclosure relates to pixel arrangements for use in light field displays. Each pixel includes a plurality of LEDs, such as micro LEDs, positioned adjacent respective micro-lenses of each pixel.
    Type: Application
    Filed: December 11, 2017
    Publication date: June 14, 2018
    Inventors: John M. WHITE, Christopher Dennis BENCHER, Manivannan THOTHADRI, Robert JAN VISSER
  • Selective etching of amorphous silicon over epitaxial silicon
    Patent number: 9991129
    Abstract: Systems and methods of etching a semiconductor substrate may include concurrent exposure of the semiconductor substrate to a chlorine-containing precursor and ultraviolet (UV) light. The semiconductor substrate may include exposed amorphous silicon. The semiconductor substrate may further include exposed crystalline silicon or underlying crystalline silicon. The methods may further include removing amorphous silicon faster than crystalline silicon.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: June 5, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Geetika Bajaj, Prerna Sonthalia Goradia, Robert Jan Visser
  • METHODS AND APPARATUS FOR DETECTION AND ANALYSIS OF NANOPARTICLES FROM SEMICONDUCTOR CHAMBER PARTS
    Publication number: 20180128744
    Abstract: Methods and apparatuses for identifying contaminants in a semiconductor cleaning solution, including: contacting a semiconductor cleaning solution with a semiconductor manufacturing component to form an effluent including one or more insoluble analytes-of-interest; contacting the effluent including one or more insoluble analytes-of-interest with an optical apparatus configured to sense fluorescence and, optionally, Raman signals from the one or more insoluble analytes-of-interest, wherein the apparatus includes an electron multiplying charged couple device and a grating spectrometer to spectrally disperse the fluorescence and project the fluorescence on to the electron multiplying charged couple device; and identifying the one or more analytes of interest.
    Type: Application
    Filed: November 7, 2017
    Publication date: May 10, 2018
    Inventors: PRERNA GORADIA, AVISHEK GHOSH, ROBERT JAN VISSER
  • METHODS AND APPARATUS FOR DETECTION AND ANALYSIS OF NANOPARTICLES FROM SEMICONDUCTOR CHAMBER PARTS
    Publication number: 20180128733
    Abstract: Methods and apparatuses for the analysis and detection of nanoparticles in a liquid from a semiconductor manufacturing component are provided herein. In some embodiments, a method of determining particle count, particle size, and zeta potential of nanoparticles in a substrate processing chamber component cleaning solution, includes (a) filling a sample cell with a cleaning solution from a substrate processing chamber component cleaning tank holding a semiconductor processing chamber component; (b) directing a light from a laser to the sample cell, wherein nanoparticles within the cleaning solution scatter the light from the laser; and (c) detecting the scattered light via one or more detectors proximate the sample cell to determine the zeta potential, the particle size and particle count of nanoparticles in the cleaning solution.
    Type: Application
    Filed: November 7, 2017
    Publication date: May 10, 2018
    Inventors: PRERNA GORADIA, SANKESHA BHOYAR, ROBERT JAN VISSER, VIJAY BHAN SHARMA, RENUKA SHAHANE
  • METHODS AND SYSTEMS FOR THERMAL ALE AND ALD
    Publication number: 20180080124
    Abstract: Systems and methods for selectively etching and depositing material on the surface of a substrate are described. Systems for atomic layer etching (ALE) and atomic layer deposition (ALD) are described which enable alternating exposure to a first precursor and then a second precursor. The substrate processing region is configured to process large surface area substrate (e.g. 300 mm wafers) without requiring direct line-of-sight pathways between the gas inlet into the substrate processing chamber and all portions of the substrate. No plasma excites either of the two precursors either remotely or locally in embodiments. A quartz crystal microbalance is placed close to the substrate pedestal to quantify deposition and etching rates. Only thermal energy from the substrate is used to get the chemical reactions to proceed according to embodiments.
    Type: Application
    Filed: September 19, 2016
    Publication date: March 22, 2018
    Inventors: Geetika Bajaj, Ranga Rao Arnepalli, Prerna Sonthalia Goradia, Robert Jan Visser