Abstract: Methods for selective dielectric deposition using self-assembled monolayer (SAM) are provided herein. A method of selectively depositing a low-k dielectric layer atop a substrate having an exposed silicon surface and an exposed silicon-containing surface, includes: (a) growing an organosilane based self-assembled monolayer atop the exposed silicon-containing surface, wherein the organosilane based self-assembled monolayer is thermally stable at a first temperature of greater than about 300 degrees Celsius; and (b) selectively depositing a low-k dielectric layer atop the exposed silicon surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the low-k dielectric layer atop the silicon-containing surface.

Abstract: Improved methods and apparatus for removing a metal nitride selectively with respect to exposed or underlying dielectric or metal layers are provided herein. In some embodiments, a method of etching a metal nitride layer atop a substrate, includes: (a) oxidizing a metal nitride layer to form a metal oxynitride layer (MN1-xOx) at a surface of the metal nitride layer, wherein M is one of titanium or tantalum and x is an integer from 0.05 to 0.95; and (b) exposing the metal oxynitride layer (MN1-xOx) to a process gas, wherein the metal oxynitride layer (MN1-xOx) reacts with the process gas to form a volatile compound which desorbs from the surface of the metal nitride layer.

Abstract: Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.

Abstract: Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.

Abstract: An apparatus for positioning micro-devices on a destination substrate includes a first support to hold a destination substrate, a second support to provide or hold a transfer body having a surface to receive an adhesive layer, a light source to generate a light beam, a mirror configured to adjustably position the light beam on the adhesive layer on the transfer body, and a controller. The controller is configured to cause the light source to generate the light beam and adjust the mirror to position the light beam on the adhesive layer so as to selectively expose one or more portions of the adhesive layer to create one or more neutralized portions. The transfer body and the destination substrate are moved away from each other and one or more micro-devices corresponding to the one or more neutralized portions of the adhesive layer remain on the destination substrate.

Abstract: A method of surface mounting micro-devices includes adhering a first plurality of micro-devices on a donor substrate to a transfer surface with an adhesive layer, removing the first plurality of micro-devices from donor substrate while the first plurality of micro-devices remain adhered to the transfer surface, positioning the transfer surface relative to a destination substrate so that a subset of the plurality of micro-devices on the transfer surface abut a plurality of receiving positions on the destination substrate, the subset including one or more micro-devices but less than all of micro-devices of the plurality of micro-devices, selectively neutralizing one or more of regions of the adhesive layer on the transfer surface corresponding to the subset of micro-device to light to detach the subset of micro-devices from the adhesive layer, and separating the transfer surface from the destination substrate such that the subset of micro-devices remain on the destination substrate.

Abstract: Improved methods for chemically etching silicon are provided herein. In some embodiments, a method of etching a silicon material includes: (a) exposing the silicon material to a halogen-containing gas; (b) evacuating the halogen-containing gas from the semiconductor processing chamber; (c) exposing the silicon material to an amine vapor to etch a monolayer of the silicon material; (d) evacuating the amine vapor from the semiconductor processing chamber and; (e) optionally repeating (a)-(d) to etch the silicon material to a predetermined thickness.

Abstract: A slurry for chemical mechanical planarization includes a surfactant, and abrasive particles having an average diameter between 20 and 30 nm and an outer surface of ceria. The abrasive particles are formed using a hydrothermal synthesis process. The abrasive particles are between 0.1 and 3 wt % of the slurry.

Abstract: A thin film device, comprising: an active device region, the active device region having reversible motion at least along a first direction between a first device state and a second device state; and a thin film encapsulant disposed adjacent the selective expansion region, wherein the thin film encapsulant comprises a first thickness in the first device state and a second thickness in the second device state, the first thickness being greater than the second thickness by 10% or greater, wherein the thin film encapsulant comprises a laser-etchable material.

Abstract: Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer.

Abstract: Embodiments described herein generally relate to methods and apparatuses for manufacturing devices. An improved substrate support assembly having a fluoro polymer layer disposed at one or more interfaces between a substrate and a susceptor and method for processing a substrate utilizing the same are provided. The fluoro polymer layer disposed at one or more interfaces between the substrate and the susceptor allows the substrate to adhere firmly to the susceptor, and allows the substrate and the susceptor to withstand greater shear forces, thus minimizing movement between the substrate and the susceptor.

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

Abstract: A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.

Abstract: Methods of etching silicon nitride faster than silicon or silicon oxide are described. Methods of selectively depositing additional material onto the silicon nitride are also described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent exposure to an etchant or a deposition precursor may then be used to selectively remove silicon nitride or to selectively deposit additional material on the silicon nitride.

Abstract: Methods of etching silicon nitride faster than silicon oxide are described. Exposed portions of silicon nitride and silicon oxide may both be present on a patterned substrate. A self-assembled monolayer (SAM) is selectively deposited over the silicon oxide but not on the exposed silicon nitride. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the OH group on the exposed silicon oxide portion and the tail moiety extending away from the patterned substrate. A subsequent gas-phase etch using anhydrous vapor-phase HF may then be used to selectively remove silicon nitride much faster than silicon oxide because the SAM has been found to delay the etch and reduce the etch rate.

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

Abstract: Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

Abstract: The invention provides an implantable medical device for treatment of a proximal humerus fracture, comprising a base element to be anchored in the medullar cavity of the humeral shaft, a support element to be fixed with respect to the base element, wherein the support element is configured to support one or more bone fragments, wherein the medical device comprises positioning members configured to position the support element with respect to the base element in a range of rotational positions and axial positions, and wherein the medical device comprises a fixation device to fixate the support element, within the range of rotational positions and axial positions, in a desired rotational and axial position with respect to the base element. In an embodiment, the medical device is a non-occluding medical device, wherein after implantation the medullar cavity is not occluded by the medical device due to the open and non canal filling structure of the device preserving blood flow to the reattached bone fragments.

Abstract: Methods of selectively depositing a patterned layer on exposed dielectric material but not on exposed metal surfaces are described. A self-assembled monolayer (SAM) is deposited using phosphonic acids. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the exposed metal portion and the tail moiety extending away from the patterned substrate and reducing the deposition rate of the patterned layer above the exposed metal portion relative to the deposition rate of the patterned layer above the exposed dielectric portion. A dielectric layer is subsequently deposited by atomic layer deposition (ALD) which cannot initiate in regions covered with the SAM in embodiments.

Abstract: A method of processing includes: providing a substrate having a contaminant material disposed on the copper surface to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the contaminant material from the copper surface; cooling the one or more filaments to room temperature; exposing the substrate in the HWCVD chamber to one or more chemical precursors to deposit a self-assembled monolayer atop the copper surface; and depositing a second layer atop the substrate.