Abstract: The polishing pad according to an embodiment adjusts the content of elements present in the polishing layer, thereby controlling the bonding strength between the polishing pad and the polishing particles and enhancing the bonding strength between the polishing particles and the semiconductor substrate (or wafer), resulting in an increase in the polishing rate. It is possible to enhance not only the mechanical properties of the polishing pad such as hardness, tensile strength, elongation, and modulus, but also the polishing rate for both a tungsten layer or an oxide layer. Accordingly, it is possible to efficiently fabricate a semiconductor device of excellent quality using the polishing pad.

Abstract: Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

Abstract: The composition according to an embodiment employs a mixture of curing agents, which comprises a first curing agent containing sulfur and a second curing agent containing an ester group, whereby it is possible to control the physical properties of the polishing pad as necessary.

Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less; wherein R11 and R12 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R11 and R12 is fluorine, L is a C1-C5 alkylene group or —O—, R13 and R14 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R13 and R14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.

Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less wherein R11 and R12 are each independently hydrogen or C1-C10 alkyl groups, and n is an integer from 1 to 30.

Abstract: A display device is provided. The display device includes a first communication interface receiving broadcast content, a second communication interface which receives a user input, a display, and a processor electrically connected with the display, the first communication interface, and the second communication. The processor controls the display to display a first user interface (UI) including a scroll bar including a plurality of points corresponding to a plurality of channels, a cursor moving on the scroll bar depending on the user input, and information on a channel corresponding to a point at which the cursor is displayed, if the second communication interface receives a preset user input. The processor is controls the display to additionally display a second UI including information on one or more channels adjacent to the channel corresponding to the point at which the cursor is displayed, if the preset user input is stopped.

Abstract: In the composition according to an embodiment, the weight ratio of toluene 2,4-diisocyanate in which one NCO group is reacted and unreacted toluene 2,6-diisocyanate in the urethane-based prepolymer is adjusted, whereby such physical properties as gelation time can be controlled. Thus, the polishing rate and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled while it has a hardness suitable for a soft pad, whereby it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Abstract: The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate, in addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing, Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

Abstract: An image reading apparatus includes an image sensor, a document feeder, and a processor. The document feeder includes a first driving device, a second driving device, a third driving device, a first sensor, and a second sensor. The first driving device includes a pick-up member to move documents from a tray to a document conveying path using a driving force through a first clutch. The second driving device is to move the tray with the documents to a side of the pick-up member using a driving force through a second clutch. The third driving device to move the documents along the document conveying path onto the image sensor using the driving force of the motor The first and second sensors detect the documents on the document conveying path. The processor controls an operation of the first clutch based on the signals of the first and second sensors.

Abstract: An aerosol generation system includes a tobacco medium accommodation portion and a moisturizer accommodation portion located at an upstream end or a downstream end of the tobacco medium accommodation portion. In addition, an aerosol generation system includes an aerosol generation device including an elongated cavity for accommodating the cigarette, a first heater for heating the tobacco medium accommodation portion, and a second heater for heating the moisturizer accommodation portion.

Abstract: The present invention relates to a method for preparing a BaSnO3 thin film, comprising the steps of: a) precipitating an amorphous precipitate by adding an alkaline aqueous solution to a mixture solution comprising a barium salt, a tin salt, hydrogen peroxide, and an organic acid; b) preparing a crystalline BaSnO3 precursor material by preheating the mixture solution containing the amorphous precipitate; c) preparing a dispersion solution by dispersing the crystalline BaSnO3 precursor material in a polar organic solvent; d) coating the dispersion solution on a substrate; and e) preparing a BaSnO3 thin film of a perovskite structure by heat treating the dispersion solution coated on the substrate.

Abstract: The present invention relates to an inorganic/organic hybrid perovskite compound film. An inorganic/organic hybrid perovskite compound film according to the present invention is polycrystalline, and has a discontinuous (100) plane scattering intensity on a grazing incidence wide angle x-ray scattering (GIWAXS) spectrum obtained using an x-ray wavelength of 1.0688 ?.

Abstract: A display device and a method therefor are provided. The display device is provided. The display device may include a display, an input module comprising input circuitry configured to detect or receive an input (e.g., a user input) from at least one input device, and a processor configured to zoom in on a specified first menu icon at a first zoom-in magnification from an original size if the input is for specifying the first menu icon in a menu icon list displayed on the display. The first zoom-in magnification may differ from a zoom-in magnification of a second menu icon from among other menu icons of the menu icon list.

Abstract: The present invention relates to a polishing pad that minimizes the occurrence of defects and a process for preparing the same, Since the polishing pad comprises fine hollow particles having shells, the glass transition temperature (Tg) of which is adjusted, the hardness of the shells and the shape of micropores on the surface of a polishing layer are controlled. Since the content of Si in the polishing layer is adjusted, it is possible to prevent the surface damage of a semiconductor substrate caused by hard additives. As a result, the polishing pad can provide a high polishing rate while minimizing the occurrence of defects such as scratches on the surface of a semiconductor substrate during the CMP process.

Abstract: The present invention relates to a method for preparing an inorganic/organic hybrid perovskite compound film, and a structure for a solar cell and, specifically, a method for preparing an inorganic/organic hybrid perovskite compound film, according to one embodiment of the present invention, can comprise the steps of: a) forming, on a substrate layer, an adduct layer containing an adduct of halogenated metal and guest molecule; and b) preparing an inorganic/organic hybrid perovskite compound film by reacting the adduct layer and an organic halide.

Abstract: In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.