Patents by Inventor Jang Yeon Kwon

Jang Yeon Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120028422
    Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.
    Type: Application
    Filed: October 6, 2011
    Publication date: February 2, 2012
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jang-yeon KWON, Sang-yoon LEE, Jong-man KIM, Kyung-bae PARK, Ji-sim JUNG
  • Patent number: 8106397
    Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: January 31, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-yeon Kwon, Sang-yoon Lee, Jong-man Kim, Kyung-bae Park, Ji-sim Jung
  • Patent number: 8102476
    Abstract: A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: January 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-seok Son, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Ji-sim Jung
  • Patent number: 8058094
    Abstract: A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: November 15, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Takashi Noguchi, Jong-man Kim, Jang-yeon Kwon, Kyung-bae Park, Ji-sim Jung, Hyuck Lim
  • Publication number: 20110170031
    Abstract: Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.
    Type: Application
    Filed: July 28, 2010
    Publication date: July 14, 2011
    Inventors: Kyoung-seok Son, Kwang-hee Lee, Jang-yeon Kwon, Ji-sim Jung
  • Publication number: 20110159646
    Abstract: A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.
    Type: Application
    Filed: March 4, 2011
    Publication date: June 30, 2011
    Inventors: Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung
  • Publication number: 20110127518
    Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.
    Type: Application
    Filed: July 28, 2010
    Publication date: June 2, 2011
    Inventors: Ji-sim Jung, Chang-seung Lee, Jae-cheol Lee, Sang-yoon Lee, Jang-yeon Kwon, Kwang-hee Lee, Kyoung-seok Son
  • Patent number: 7943985
    Abstract: Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: May 17, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-sang Kim, Sang-yoon Lee, Myung-kwan Ryu, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung
  • Patent number: 7923722
    Abstract: A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: April 12, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung
  • Patent number: 7923316
    Abstract: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.
    Type: Grant
    Filed: June 11, 2007
    Date of Patent: April 12, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae Park, Takashi Noguchi, Se-young Cho, Do-young Kim, Jang-yeon Kwon
  • Patent number: 7915610
    Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.
    Type: Grant
    Filed: November 10, 2009
    Date of Patent: March 29, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myung-kwan Ryu, Jun-seong Kim, Sang-yoon Lee, Euk-che Hwang, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Kyung-seok Son, Ji-sim Jung
  • Publication number: 20110017990
    Abstract: Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer.
    Type: Application
    Filed: February 26, 2010
    Publication date: January 27, 2011
    Inventors: Kyoung-seok Son, Jang-yeon Kwon, Hyoung-sub Kim, Hoo-jeong Lee, Mi-ran Moon, Kyung Park
  • Patent number: 7871872
    Abstract: Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: January 18, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-man Kim, Kyung-bae Park, Jang-yeon Kwon, Ji-sim Jung
  • Publication number: 20100321279
    Abstract: Disclosed are a transistor, an electronic device and methods of manufacturing the same, the transistor including a photo relaxation layer between a channel layer and a gate insulating layer in order to suppress characteristic variations of the transistor due to light. The photo relaxation layer may be a layer of a material capable of suppressing variations in a threshold voltage of the transistor due to light. The photo relaxation layer may contain a metal oxide such as aluminum (Al) oxide. The channel layer may contain an oxide semiconductor.
    Type: Application
    Filed: December 4, 2009
    Publication date: December 23, 2010
    Inventors: Ji-sim Jung, Sang-yoon Lee, Kwang-hee Lee, Jang-yeon Kwon, Kyoung-seok Son
  • Patent number: 7851802
    Abstract: Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.
    Type: Grant
    Filed: July 18, 2008
    Date of Patent: December 14, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-bae Park, Seon-mi Yoon, Sang-yoon Lee, Jae-young Choi, Hyeon-jin Shin, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-seok Son, Ji-sim Jung
  • Publication number: 20100301324
    Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.
    Type: Application
    Filed: August 13, 2010
    Publication date: December 2, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ji-sim JUNG, Jong-man KIM, Jang-yeon KWON, Kyung-bae PARK
  • Publication number: 20100276683
    Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.
    Type: Application
    Filed: March 23, 2010
    Publication date: November 4, 2010
    Inventors: Tae-sang Kim, Sang-yoon Lee, Jang-yeon Kwon, Kyoung-seok Son, Ji-sim Jung, Kwang-hee Lee
  • Patent number: 7799625
    Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: September 21, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-sim Jung, Jong-man Kim, Jang-yeon Kwon, Kyung-bae Park
  • Patent number: 7767502
    Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: August 3, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do-young Kim, Wan-jun Park, Young-soo Park, June-key Lee, Yo-sep Min, Jang-yeon Kwon, Sun-ae Seo, Young-min Choi, Soo-doo Chae
  • Patent number: 7767505
    Abstract: Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.
    Type: Grant
    Filed: May 22, 2008
    Date of Patent: August 3, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-seok Son, Sang-yoon Lee, Myung-kwan Ryu, Tae-sang Kim, Jang-yeon Kwon, Kyung-bae Park, Ji-sim Jung