Abstract: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Abstract: Memory of a multilevel quantum dot structure and a method for fabricating the same, is disclosed, the method including the steps of (1) forming a first insulating layer on a substrate, (2) repeating formation of a conductive layer and a second insulating layer on the first insulating layer at least once, and (3) agglomerating each of the conductive layers to form quantized dot layers.

Abstract: A method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating layer on a substrate, forming a conductive layer on the first insulating layer, forming a second insulating layer on the conductive layer, and annealing the conductive layer between the first, and second insulating layers to agglomerate the conductive layer.

Abstract: Memory of a multilevel quantum dot structure and a method for fabricating the same, is disclosed, the method including the steps of (1) forming a first insulating layer on a substrate, (2) repeating formation of a conductive layer and a second insulating layer on the first insulating layer at least once, and (3) agglomerating each of the conductive layers to form quantized dot layers.

Abstract: A semiconductor memory having a multilevel quantum dot structure is formed by alternatively disposing conductive layers and insulation layers, and processing these layers so that quantum dots are formed in the conductive layers. The writing and reading of data into the semiconductor memory are achieved by using the principle of Coulomb blockade and quantized voltage drops. The size and distribution of the quantum dots are controlled by agglomeration, selective oxidation, etc. in order to achieve the desired quantum dot layer structure so that the immigration of charges between a semiconductor channel and each quantum dot layer is different.

Abstract: Method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating layer on a substrate, forming a conductive layer on the first insulating layer, forming a second insulating layer on the conductive layer, and annealing the conductive layer between the first, and second insulating layers to agglomerate the conductive layer.

Abstract: Method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating layer on a substrate, forming a conductive layer on the first insulating layer, forming a second insulating layer on the conductive layer, and annealing the conductive layer between the first, and second insulating layers to agglomerate the conductive layer.