Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Abstract: Disclosed herein are methods of fabricating a polycrystalline silicon film and methods of fabricating a thin film transistor (TFT) using the same. The method of fabricating a polycrystalline silicon film includes forming an electrically insulating thermally conductive layer using a material selected from the group consisting of aluminum-containing ceramics, cobalt-containing ceramics, and iron-containing ceramics, on a substrate; forming an amorphous silicon layer on the thermally conductive layer; forming an amorphous silicon island by patterning the amorphous silicon layer; and crystallizing amorphous silicon by annealing the amorphous silicon island. A polycrystalline silicon film having a very large grain size and a TFT using the same can be formed in desired positions.

Abstract: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

Abstract: A method of fabricating a high-quality silicon thin layer includes making Xe ions generated by RF power collide with a silicon target material layer to generate silicon particles from the silicon target material layer; and depositing the silicon particles on a predetermined substrate. The method is performed under a pressure of about 5 mTorr or lower and at an RF power of about 200 W or more. In this method, the silicon thin layer is thermally stabilized, and the amount of gas captured in silicon crystals during the sputtering process is greatly reduced.

Abstract: In a thin film semiconductor device realized on a flexible substrate, an electronic device using the same, and a manufacturing method thereof, the thin film semiconductor device and an electronic device include a flexible substrate, a semiconductor chip, which is formed on the flexible substrate, and a protective cap, which seals the semiconductor chip. Durability of the thin film semiconductor device against stress due to bending of the substrate is improved by using the protective cap.

Abstract: Provided is a display system that uses a mobile communication terminal. The display system includes a mobile communication terminal having an insertion unit, and a mobile display device having a slot-type connection unit insertable into the insertion unit of the mobile communication terminal. Accordingly, it is possible to display received content on a display screen larger than that of the mobile communication terminal. Also, the display system overcomes noise problems and displays high-definition images by constructing a minimum number of connection terminals that connect the mobile display device to the mobile communication terminal. A method for displaying an image from a mobile communication terminal and a computer program product including a storage medium for performing the method are also provided.

Abstract: A silicon thin film transistor (“TFT”) and method of manufacturing the same are provided where the silicon TFT includes buffer layers deposited on both surfaces of a substrate, respectively, and a silicon channel is deposited on one of the buffer layers. A gate insulator is deposited on the silicon channel, and a gate is deposited on the gate insulator. Because of the buffer layers deposited on both surfaces of the substrate, the bending of the substrate is prevented and the silicon TFT has good operating performance.

Abstract: An organic light emitting display includes: a substrate; a plurality of pixels which are arranged in a matrix on the substrate, each pixel having a switching transistor, a driving transistor, and an organic light emission diode (OLED). Silicon channels in the switching transistor have lower carrier mobility than silicon channels in the driving transistor. The low carrier mobility of amorphous silicon in the switching transistor prevents current leakage and the higher carrier mobility of polycrystalline silicon in the driving transistor provides a high driving speed and an extended lifetime.

Abstract: A plastic substrate for a display panel and method of manufacturing the same are provided. The plastic substrate is obtained by mixing an oligomer of a thermosetting resin, inorganic nanoparticles, and 1,6-hexanedioldiacrylate in a mass ratio of 1:0.8˜1.2:0.8˜1.2. The plastic substrate has transparency and optical isotropy. The method includes preparing a resin composite in which an oligomer of a thermosetting resin, inorganic nanoparticles, 1,6-hexanedioldiacrylate, and a photoinitiator are dissolved and distributed in a solvent; casting a substrate using the resin composite; and curing the substrate by irradiating ultraviolet rays onto the substrate.

Abstract: A thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor may include a substrate, a buffer layer, a polysilicon layer, a gate insulating layer and/or a gate electrode, and a capping layer. The buffer layer may be formed on the substrate. The polysilicon layer may be formed on the buffer layer, and may include a first doped region, a second doped region, and a channel region. The gate insulating layer and a gate electrode may be sequentially stacked on the channel region of the polysilicon layer. The capping layer may be stacked on the gate electrode.

Abstract: A thin film transistor (TFT) that can prevent damage to a silicon layer under a gate electrode in an annealing process by using a first gate electrode having high thermal resistance and a second gate electrode having high reflectance and a method of manufacturing the TFT are provided. The method of manufacturing a TFT includes forming a double-layered gate electrode which includes a first gate electrode formed of a material having high thermal resistance and a second gate electrode formed of a metal having high optical reflectance on the first gate electrode, and forming a source and a drain by annealing doped regions on both sides of a silicon layer under the gate electrode by radiating a laser beam onto the entire upper surface of the silicon layer.

Abstract: Provided is a silicon thin film transistor (TFT) including: a substrate; a silicon channel layer formed on the substrate with a source and a drain on both sides thereof; a gate insulating layer formed on the silicon channel layer; and a gate formed on the gate insulating layer, wherein the gate insulating layer has a structure including an HfOx film. The TFT has a low leakage current.

Abstract: A method of preparing a semiconductor film on a substrate is disclosed. The method includes arranging an insulating substrate in a deposition chamber and depositing a semiconductor film onto the insulating substrate using ion beam deposition, wherein a temperature of the insulating substrate during the depositing does not exceed 250° C. The method can produce a thin film transistor. The disclosed ion beam deposition method forms, at lower temperature and with low impurities, a film morphology with desired smoothness and grain size. Deposition of semiconductor films on low melting point substrates, such as plastic flexible substrates, is enables.

Abstract: A method of fabricating a poly crystalline silicon thin film transistor (TFT) is provided. The method includes the operations of forming a poly crystalline silicon having a source, a drain, and a channel region between the source and the drain on a substrate in a predetermined pattern; forming an insulating layer on the poly crystalline silicon; forming a silicon-based heat absorption material layer on the insulating layer; exposing the source and the drain by patterning the insulating layer and the heat absorption material layer and forming a gate and a gate insulating layer corresponding to the channel region; injecting impurities into the source, the drain, and the gate; and heat processing the gate insulating layer and the heat absorption material layer by applying thermal energy to the heat absorption material layer. In the heat treatment, the gate material absorbs some of the heat and passes the remaining heat. The heat treatment of the gate insulating layer under the gate can be performed efficiently.

Abstract: A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550°C.

Abstract: A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 ? or more. An interface trap density of the SiO2 can be as high as 1011/cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

Abstract: Provided are a high quality poly-Si structure and a method of fabricating the same. The poly-Si structure includes a substrate, a polycrystallized silicon thin film, and an adhesive layer disposed between them. In the method of fabricating the poly-Si structure, an adhesive layer is first formed on a substrate, a-Si is deposited at a low temperature, and a polycrystallization process of silicon is, then performed by high density energy. Polycrystallization by high energy is possible, and therefore, high quality poly-Si can be achieved. The method can be employed in a low-temperature process, and a heat-sensitive material such as plastic or the like can be used as a substrate.

Abstract: An electrostatic latent image forming medium includes a frame, an imaging surface on which an electrostatic latent image is to be formed, the imaging surface being supported by the frame, and an alteration mechanism for altering the electrostatic latent image on the imaging surface, the alteration mechanism being between the frame and the imaging surface. When signals are selectively applied to the alteration mechanism, an electrostatic latent image with a potential different from a potential of its surrounding area is formed on the imaging surface.

Abstract: Provided is a flexible display including a plastic substrate and a protective layer formed on the plastic substrate. Accordingly, the plastic substrate is protected from a thermal damage due to a thermal treatment, and sufficient thermal treatment for forming a polysilicon layer can be performed. Also, a polysilicon layer having a good surface and excellent prosperities can be formed due to reflection or absorption of a laser light by the protective layer. Consequently, the performance and durability of the flexible display are greatly improved.

Abstract: Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.