Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: A circuit is disclosed. The circuit includes a first transistor including a first drain terminal, a first gate terminal and a first source terminal, a depletion-mode transistor including a second drain terminal, a second gate terminal and a second source terminal, the second drain terminal connected to the first drain terminal, the depletion-mode transistor arranged to sense a first voltage at the first drain terminal and generate a second voltage at the second source terminal, and a comparator arranged to receive the second voltage, and transition the first transistor from an on state to an off state in response to the first transistor entering its saturation region of operation. In one aspect, the first transistor includes gallium nitride (GaN). In another aspect, the circuit further includes a logic circuit arranged to receive an output voltage generated by the comparator and to drive the first gate terminal.

Abstract: An electronic circuit is disclosed. The electronic circuit includes a transistor having a gate terminal, a source terminal and a drain terminal, and a gate driver circuit including a pull-down transistor coupled to the gate terminal, and an input terminal arranged to receive an input signal and generate a corresponding output signal at an output terminal coupled to the gate terminal, where the gate driver circuit is arranged to store energy harvested from the input signal and use the stored energy to change a conductive state of the pull-down transistor. In one aspect, the transistor includes gallium nitride (GaN). In another aspect, the pull-down transistor includes GaN.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: The disclosure herein describes the detection of malware campaigns based on analysis of attributes of telemetry data. Telemetry data associated with malware campaign detection includes multiple attributes and is associated with a first time interval. Statistics of a target statistic set are calculated based on a composite time series of the multiple attributes of the telemetry data. The target set is compared to a historical statistic set based on a second time interval and, based on the target set exceeding a statistic threshold of the historical set, peak detection analysis of the target set is performed. Based on the analysis indicating the presence of a valid peak result, a notification of detection of a malware campaign is sent, wherein the notification includes data indicative of the valid peak result and enables a receiver of the notification to take corrective action.

Abstract: A method, system and apparatus for flexible component routing design, wherein a flexible component includes a first end and a second end, includes moving the second end relative to the first end to simulate an operational motion state of the flexible component, scanning the flexible component to obtain a first set of routing data for the flexible component, changing position of the second end from a first position to a second position, moving the second end relative to the first end to simulate an operational motion state of the flexible component, scanning the flexible component to obtain a second set of routing data for the flexible component, and comparing the first set of routing data with the second set of routing data to determine a routing design for the flexible component.

Abstract: Provided herein are oligonucleotide agents comprising one or more therapeutic oligonucleotides such as siRNA and one or more targeting conjugate compounds. In certain embodiments, the conjugate compound comprises one or more N-Acetylgalactosamine as targeting group, branching group and linker group. By incorporating long carbon chains into the GalNAc clusters instead of using multiple amide groups to elongate the chain length, simplification of the synthesis by reducing the number of steps is achieved.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Abstract: An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Abstract: An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.

Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.

Abstract: A connector system and method comprising a coupling with 3 walls defining a cavity. Disposed on the first side wall and second side wall are lips protruding into the cavity, such that a grooved board inserted into the cavity is in contact with the lips and back wall. Disposed on the walls are mounting holes, such that other apparatuses may be mounted to the mounting holes. The couplings may be mounted on other identical couplings or on couplings of different heights.

Abstract: A telematics controller is programmed identify a location of the vehicle responsive to failure of a vehicle-originated data call to initiate packet-switched communications, and send, to a service delivery network configured to provide data services to the vehicle, a message specifying that circuit-switched communication but not packet-switched communication is available to the vehicle. A message is received, over a wide-area network from a vehicle, in response to a failed initiation of a packed-switched data connection over the wide-area network, indicating that packet-switched communications are unavailable at a current location of the vehicle. Failure zones are updated to indicate that the current location of the vehicle is a network location supporting circuit-switched communication but not packet-switched communication over the wide-area network.

Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.

Abstract: A telematics controller is programmed identify a location of the vehicle responsive to failure of a vehicle-originated data call to initiate packet-switched communications, and send, to a service delivery network configured to provide data services to the vehicle, a message specifying that circuit-switched communication but not packet-switched communication is available to the vehicle. A message is received, over a wide-area network from a vehicle, in response to a failed initiation of a packed-switched data connection over the wide-area network, indicating that packet-switched communications are unavailable at a current location of the vehicle. Failure zones are updated to indicate that the current location of the vehicle is a network location supporting circuit-switched communication but not packet-switched communication over the wide-area network.