Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.

Abstract: A telematics controller is programmed identify a location of the vehicle responsive to failure of a vehicle-originated data call to initiate packet-switched communications, and send, to a service delivery network configured to provide data services to the vehicle, a message specifying that circuit-switched communication but not packet-switched communication is available to the vehicle. A message is received, over a wide-area network from a vehicle, in response to a failed initiation of a packed-switched data connection over the wide-area network, indicating that packet-switched communications are unavailable at a current location of the vehicle. Failure zones are updated to indicate that the current location of the vehicle is a network location supporting circuit-switched communication but not packet-switched communication over the wide-area network.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: The present disclosure provides a fastener for a vehicle carpet. The fastener includes a receiving portion having a first open end and a second open end, a flange connected at the first open end of the receiving portion, and a plurality of engaging parts disposed on an inner wall of the receiving portion and spaced apart along a perimeter of the inner wall. Each of the engaging parts has two flexible end sections connected with the inner wall of the receiving portion and a threaded section between the two flexible end sections.

Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.

Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Abstract: An article storage device comprises a housing having a storage space defined by a bottom and a plurality of sidewalls; and a partition plate extending between two opposing sidewalls of the housing, perpendicular to a bottom of the housing, and dividing the storage space into a plurality of compartments. The partition plate is pivotably coupled to the opposing sidewalls of the housing via a pivot.

Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).

Abstract: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

Abstract: The present disclosure provides a fastener for a vehicle carpet. The fastener includes a receiving portion having a first open end and a second open end, a flange connected at the first open end of the receiving portion, and a plurality of engaging parts disposed on an inner wall of the receiving portion and spaced apart along a perimeter of the inner wall. Each of the engaging parts has two flexible end sections connected with the inner wall of the receiving portion and a threaded section between the two flexible end sections.

Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.

Abstract: There are disclosed herein various implementations of composite semiconductor devices including a voltage protected device. In one exemplary implementation, a normally OFF composite semiconductor device comprises a normally ON III-nitride power transistor having a first output capacitance, and a low voltage (LV) device cascoded with the normally ON III-nitride power transistor to form the normally OFF composite semiconductor device, the LV device having a second output capacitance. A ratio of the first output capacitance to the second output capacitance is set based on a ratio of a drain voltage of the normally ON III-nitride power transistor to a breakdown voltage of the LV device so as to provide voltage protection for the LV device.

Abstract: An article storage device comprises a housing having a storage space defined by a bottom and a plurality of sidewalls; and a partition plate extending between two opposing sidewalls of the housing, perpendicular to a bottom of the housing, and dividing the storage space into a plurality of compartments. The partition plate is pivotably coupled to the opposing sidewalls of the housing via a pivot.

Abstract: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.

Abstract: An electronic circuit is disclosed. The electronic circuit includes a substrate having GaN, and a power switch formed on the substrate and including a first control gate and a first source. The electronic circuit also includes a drive circuit formed on the substrate and including an output coupled to the first control gate, and a power supply having a supply voltage and coupled to the drive circuit, where the output can be driven to the supply voltage.