Abstract: Two-dimensional (2D) materials and their heterostructures show a promising path for next generation electronics. Nevertheless, there are challenges with (i) controlling monolayer (ML)-by-ML 2D material growth, (ii) maintaining single-domain growth, and (iii) controlling the number of layers and crystallinity at the wafer-scale. The deterministic confined growth techniques disclosed here address these challenges simultaneously to produce wafer-scale single-domain 2D MLs and their heterostructures on arbitrary substrates. The growth of the first nuclei is confined by patterning SiO2 masks on 2-inch substrates to define selective or confined growth areas. Each growth area or trench is just a few microns wide and is filled with a single-domain ML before the second set of nuclei is introduced. Growing the second set of nuclei within the trenches yields an array of single-domain bilayers at the 2-inch wafer scale. Devices made with the single-domain bilayers exhibit excellent performance over the entire wafer.

Abstract: Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ?min?0 to an upper limiting angular frequency ?max where ?max>?min. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ?* in the stopband, so that ?min<?*<?max. The angular frequencies ?* correspond to electronic excitations ??* from valence band tail (VBT) states of the amorphous photovoltaic material to conduction band tail (CBT) states of the amorphous photovoltaic material.

Abstract: A semiconductor device that includes a fin structure of a type III-V semiconductor material that is substantially free of defects, and has sidewalls that are substantially free of roughness caused by epitaxially growing the type III-V semiconductor material abutting a dielectric material. The semiconductor device further includes a gate structure present on a channel portion of the fin structure; and a source region and a drain region present on opposing sides of the gate structure.

Abstract: A laser structure including a Si or Ge substrate, a III-V buffer layer formed on the substrate, a light emitting diode (LED) formed on the buffer layer configured to produce visible light, a lens disposed on the LED to focus light from the LED, a photonic crystal layer formed on the LED to receive the light focused by the lens, and a monolayer semiconductor nanocavity laser formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED. The LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.

Abstract: The fabrication of single-crystalline ionically conductive materials and related articles and systems are generally described.

Abstract: Memristors, including memristors comprising a Schottky barrier, and related systems and methods are generally described.

Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

Abstract: A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer. A gate structure is formed over the device channel.

Abstract: Embodiments relate to a non-invasive electronic device including at least one sensing unit capable of accurately monitoring a user's health condition for a long time such as a few weeks without malfunction while it is worn on the wearer's skin in a non-invasive manner and a method for fabricating the non-invasive electronic device. The non-invasive electronic device includes for example, a skin sensor device.

Abstract: Epitaxial growth of materials, and related systems and articles, are generally described.

Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.

Abstract: Embodiments of this disclosure include apparatus, systems, and methods for fabricating monolayers. In one example, a method includes forming a multilayer film having a plurality of monolayers of a two-dimensional (2D) material on a growth substrate. The multilayer film has a first side proximate the growth substrate and a second side opposite the first side.

Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

Abstract: Embodiments including apparatus, systems, and methods for nanofabrication are provided. In one example, a method of manufacturing a semiconductor device includes forming a two-dimensional (2D) layer comprising a 2D material on a first substrate and forming a plurality of holes in the 2D layer to create a patterned 2D layer. The method also includes forming a single-crystalline film on the patterned 2D layer and transferring the single-crystalline film onto a second substrate.

Abstract: LED therapy masks, and associated systems and methods, are generally described. In one example, a wearable system for skin treatment of a user includes a substrate and a plurality of pixels disposed on the substrate. In this example, each pixel in the plurality of pixels includes a stack of light emitting diodes (LEDs) including a first LED configured to emit first light at a first wavelength and a second LED configured to emit light at a second wavelength. In this example, each pixel also includes a first microneedle in optical communication with the first LED and configured to guide the first light into the skin of the user during use and a second microneedle in optical communication with the second LED and configured to guide the second light into the skin of the user during use.

Abstract: A semiconductor device includes a monocrystalline substrate configured to form a channel region between two recesses in the substrate. A gate conductor is formed on a passivation layer over the channel region. Dielectric pads are formed in a bottom of the recesses and configured to prevent leakage to the substrate. Source and drain regions are formed in the recesses on the dielectric pads from a deposited non-crystalline n-type material with the source and drain regions making contact with the channel region.

Abstract: A photovoltaic device includes an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate. It further includes a top contact formed in contact with a transparent conductive layer opposite the back contact and a stressor layer forming a superstrate on the absorber layer opposite the back contact.

Abstract: Apparatus, systems, and methods for forming semiconductor materials (e.g., using nanofabrication) are generally described. In one example, a method comprises formation of a carbon buffer layer on a first substrate and a graphene layer on the carbon buffer layer by silicon sublimation, followed by removing the graphene layer so as to expose the carbon buffer layer and form a fabrication platform.

Abstract: Embodiments of this disclosure include apparatus, systems, and methods for fabricating monolayers. In one example, a method includes forming a multilayer film having a plurality of monolayers of a two-dimensional (2D) material on a growth substrate. The multilayer film has a first side proximate the growth substrate and a second side opposite the first side.

Abstract: Exemplary embodiments relate to a skin-adherable electronic device including a semiconductor circuit unit including a circuit element including an electrode and an interconnect, and a semiconductor device including an insulating layer and an active layer; and a flexible patch that can adhere to skin and including a plurality of through-holes, wherein the insulating layer includes a plurality of through-holes corresponding to the plurality of through-holes of the flexible patch, and a method of manufacturing the same. When the active layer is made of a piezoelectric material, the electronic device may be used as a skin sensor that can acquire skin deformation and/or elasticity information.