Abstract: A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

Abstract: A method of manufacture for an acoustic resonator device. The method includes forming a nucleation layer characterized by nucleation growth parameters overlying a substrate and forming a strained piezoelectric layer overlying the nucleation layer. The strained piezoelectric layer is characterized by a strain condition and piezoelectric layer parameters. The process of forming the strained piezoelectric layer can include an epitaxial growth process configured by nucleation growth parameters and piezoelectric layer parameters to modulate the strain condition in the strained piezoelectric layer. By modulating the strain condition, the piezoelectric properties of the resulting piezoelectric layer can be adjusted and improved for specific applications.

Abstract: A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/ cm2. A second electrode material is overlying the single crystal capacitor dielectric material.

Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

Abstract: A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/cm2. A second electrode material is overlying the single crystal capacitor dielectric material.

Abstract: A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.

Abstract: A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.

Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.

Abstract: A substrate structure for an acoustic resonator device. The substrate has a substrate member comprising a plurality of support members configured to form an array structure. In an example, the substrate member has an upper region, and optionally, has a plurality of recessed regions configured by the support members. The substrate has a thickness of single crystal piezo material formed overlying the upper region. In an example, the thickness of single crystal piezo material has a first surface region and a second surface region opposite of the first surface region.

Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

Abstract: A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

Abstract: A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.

Abstract: A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 1012 defects/cm2. A second electrode material is overlying the single crystal capacitor dielectric material.

Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.

Abstract: A high voltage and high power gallium nitride (GaN) transistor structure is disclosed. A plurality of structural epitaxial layers including a GaN buffer layer is deposited on a substrate. A GaN termination layer is deposited on the plurality of structural epitaxial layers. The GaN termination layer is adapted to protect the plurality of structural epitaxial layers from surface reactions. The GaN termination layer is sufficiently thin to allow electrons to tunnel through the GaN termination layer. Electrical contacts are deposited on the GaN termination layer, thereby forming a high electron mobility transistor.

Abstract: The present invention relates to an active bias Darlington pair amplifier that may operate without a traditional bias resistor. The active bias Darlington pair amplifier includes an output transistor element that is cascaded with and driven from a driver transistor element. Active bias circuitry provides bias to the driver transistor element to regulate bias current in the output transistor element. The bias current in the output transistor element is sensed by the active bias circuitry. The active bias circuitry may include alternating current (AC) circuitry, which may adjust bias under certain radio frequency (RF) drive conditions. The active bias Darlington pair amplifier may include feedback circuitry, which provides feedback from the output transistor element to the driver transistor element. The feedback circuitry may include AC circuitry, which may provide frequency dependent feedback.