Abstract: The present invention is a hybrid integrated circuit comprising at least two semiconductor dies. A high performance semiconductor die includes high performance epitaxy layers grown on a donor substrate, which may form active devices such as transistors. A supporting semiconductor die includes epitaxy layers of a commercially available technology and grown on a native substrate to form passive devices such as resistors, capacitors, inductors, backside via holes, or active devices such as transistors The semiconductor dies are attached to a metallic mounting structure and may be electrically interconnected using traditional IC interconnect methods, such as wire bonding. The metallic mounting structure may function as a grounding base, which may be formed of electrically conductive metal such as copper. The high performance epitaxy layers may include GaN epitaxy layers, AlGaN epitaxy layers, SiC epitaxy layers, or a combination of the three.

Abstract: The present invention relates to an epitaxial structure having one or more structural epitaxial layers, including a gallium nitride (GaN) layer, which is deposited on a substrate, and a method of growing the epitaxial structure, wherein the structural epitaxial layers can be separated from the substrate. In general, a sacrificial epitaxial layer is deposited on the substrate between the substrate and the structural epitaxial layers, and the structural epitaxial layers are deposited on the sacrificial layer. After growth, the structural epitaxial layers are separated from the substrate by oxidizing the sacrificial layer. The structural epitaxial layers include a nucleation layer deposited on the sacrificial layer and a gallium nitride layer deposited on the nucleation layer. Optionally, the oxidation of the sacrificial layer may also oxidize the nucleation layer.

Abstract: An oscillator and upconverters and downconverters including the oscillator are provided, wherein the oscillator includes a transistor comprised of a semiconductor material having a wide bandgap for producing RF output signals. For example, the transistor can be formed of a semiconductor material, such as GaN, AlGaN, SiC or BN, that has a bandgap of at least 2.0 eV. The oscillator also includes a bias supply for providing a supply voltage and a supply current. Additionally, the oscillator has a tank circuit that includes first and second reactances connected to respective terminals of the transistor such that the transistor is unstable and an oscillating RF output signal is produced. The tank circuit can also include a varactor connected to a respective reactance and a control input is provided to tune the oscillating RF output signal. Upconverters, both saturated and linear, and downconverters are also provided that include the oscillator.

Abstract: A highly uniform, planar and high speed JHEMT-HBT MMIC is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate. The composite emitter-channel layer includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter and the JHEMT's channel, thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact, planar HBT base and JHEMT gate contacts, and planar HBT emitter and JHEMT source and drain contacts.

Abstract: A highly uniform, planar and high speed JHEMT-HBT MMIC is fabricated using a single growth process. A multi-layer structure including a composite emitter-channel layer, a base-gate layer and a collector layer is grown on a substrate. The composite emitter-channel layer includes a sub-emitter/channel layer that reduces the access resistance to the HBT's emitter and the JHEMT's channel, thereby improving the HBT's high frequency performance and increasing the JHEMT's current gain. The multi-layer structure is then patterned and metallized to form an HBT collector contact, planar HBT base and JHEMT gate contacts, and planar HBT emitter and JHEMT source and drain contacts.

Abstract: A combined test fixture and spatial-power-combined amplifier includes a base, a first waveguide mounting flange engaged to said base, a second waveguide mounting flange engaged to said base, a waveguide input fixed to said first flange, a waveguide output fixed to said second flange, an amplifier array disposed between said first flange and second flange, said array comprising a plurality of semiconductors for amplifying a signal, and a spacer for spacing apart said semiconductors. A plurality of amplifier cards constitute the array, with the cards being disposed in various arrangements which include a linearly stacked arrangement and radially stacked arrangement. The first and second waveguide mounting flanges are constructed to slide along the base to enable the amplifier array to be easily changed.

Abstract: An apparatus and method of processing a planar HEMT or FET semiconductor device is disclosed. An ohmic metalization is patterned on a semiconductor surface then lifted-off. A plurality of process control monitors are isolated, preferably using a wet etch process. The process control monitors preferably include transmission line patterns (TLMs) and etch field effect transistors The TLMs measure the contact resistance during the ohmic alloy process, and the etch field effect transistors monitor the drain current during the gate-recess step. The ohmic metalizations are then alloyed, and a gate is written using an electron beam. The semiconductor device is isolated, followed by application of an overlay which connects all resulting planar device connecting pads.

Abstract: A system for redistributing a television signal to a multiplicity of receiver units within a multiple dwelling unit (MDU) includes a main receiving antenna which receives a broadband television signal and a translation device that translates the broadband television signal into a different carrier frequency band. One or more broadcasting antennas, located at advantageous sites within the MDU, transmit the translated television signal along one or more walls of the MDU to be received by antennas associated with one or more individual receiver units. Each receiver unit demodulates the received television signal and provides a user-specified channel to a television set for display.