Abstract: Disclosed is a method of executing an electrical function, such as a fusing operation, by activation through a chip embedded photodiode through spectrally selected external light activation, and corresponding structure and circuit. The present invention is based on having incident light with specific intensity/wave length characteristics, in conjunction with additional circuit elements to an integrated circuit, perform the implementation of repairs, i.e., replacing failing circuit elements with redundant ones for yield and/or reliability. Also to perform disconnection of ESD protection device from input pad one the packaged chip is placed in system. No additional pins on the package are necessary.

Abstract: A semiconductor structure and a system for fabricating an integrated circuit chip. The semiconductor structure includes: a buried oxide layer on a semiconductor wafer; a thin fin structure on the buried oxide layer, wherein the thin fin structure includes a first hard mask on a semiconductor fin, wherein the semiconductor fin is disposed between the first hard mask and a surface of the buried oxide layer; and a thick mesa structure on the buried oxide layer, and wherein the thick mesa structure includes a semiconductor mesa. The system for fabricating an integrated circuit chip enables: providing a buried oxide layer on and in direct mechanical contact with a semiconductor wafer; and concurrently forming at least one fin-type field effect transistor and at least one thick-body device on the buried oxide layer.

Abstract: A design structure for an integrated circuit that includes at least one tunneling device voltage detection circuit for generating a trigger flag signal. The tunneling device voltage detection circuit includes first and second voltage dividers receiving a supply voltage and having corresponding respective first and second internal node output voltages. The first and second voltage dividers are configured so the first output voltage is linear relative to the supply voltage and so that the second output voltage is nonlinear relative to the supply voltage. As the supply voltage ramps up, the profiles of the first and second output voltage cross at a particular voltage. An operational amplifier circuit senses when the first and second output voltages become equal and, in response thereto, outputs a trigger signal that indicates that the supply voltage has reached a certain level.

Abstract: An integrated circuit that includes at least one tunneling device voltage detection circuit for generating a trigger flag signal. The tunneling device voltage detection circuit includes first and second voltage dividers receiving a supply voltage and having corresponding respective first and second internal node output voltages. The first and second voltage dividers are configured so the first output voltage is linear relative to the supply voltage and so that the second output voltage is nonlinear relative to the supply voltage. As the supply voltage ramps up, the profiles of the first and second output voltage cross at a particular voltage. An operational amplifier circuit senses when the first and second output voltages become equal and, in response thereto, outputs a trigger signal that indicates that the supply voltage has reached a certain level.

Abstract: A method to redistribute current demand is presented. The method includes a first step of determining timing arc data for one or more timing arcs of a circuit design. The method includes a second step of checking the timing arc data for delay shift target cells. The method includes a further step of swapping a delay shift target cell with a delay shift cell.

Abstract: A memory device using a plurality of enhanced row decode drivers for activating wordlines in a memory array is disclosed. Circuit design attributes of the enhanced row decode drivers are varied as a function of proximity to a source of a row address signal applied to each decode driver. The circuit variations are operable to reduce the leakage power of the driver by degrading performance thereof while maintaining required worst case timing. The worst case timing being defined by the timing and performance requirements for the most distant of the row decode driver circuits relative to the source of the applied row address signals.

Abstract: The disclosure describes an integrated circuit with multiple semiconductor fins having different widths and variable spacing on the same substrate. The method of forming the circuit incorporates a sidewall image transfer process using different types of mandrels. Fin thickness and fin-to-fin spacing are controlled by an oxidation process used to form oxide sidewalls on the mandrels, and more particularly, by the processing time and the use of intrinsic, oxidation-enhancing and/or oxidation-inhibiting mandrels. Fin thickness is also controlled by using sidewalls spacers combined with or instead of the oxide sidewalls. Specifically, images of the oxide sidewalls alone, images of sidewall spacers alone, and/or combined images of sidewall spacers and oxide sidewalls are transferred into a semiconductor layer to form the fins. The fins with different thicknesses and variable spacing can be used to form a single multiple-fin FETs.

Abstract: An apparatus and method for providing a read-only memory (ROM) bit cell having one each of a PMOS transistor and an NMOS transistor, which has reduced static and dynamic electric power losses, are described. In particular, the bit cell does not require a pre-charge transistor. The sense amplifier for determining the voltages on ROM bit lines may be a digital inverter, address decoding may be simplified since there are no timing requirements with respect to transistor pre-charge, and chips containing a plurality of ROM bit cell may be readily programmed. In one embodiment of the invention, each bit cell includes one PMOS transistor having its source in electrical connection with a voltage source, its drain connected or unconnected to a bit line, and its gate connected to an inverted version of the word line signal; and one NMOS transistor having its source connected to a lower voltage source, its drain connected or disconnected to the bit line, and its gate connected to the word line.

Abstract: A method for forming an impeller for a pump provides a reliable protective barrier that prevents or eliminates the ingress of pumped fluid that might otherwise attack the magnetic assembly of the impeller. An inner barrier is hermetically connected to an internal impeller section at one or more seams to cover at least part of a first magnetic assembly. Filler is introduced into a spatial volume of the first magnet assembly associated with the internal impeller section. The remainder of an impeller is molded over or in association with the internal impeller section to form the impeller with the inner barrier and an outer barrier overlying the inner barrier for protection of the first magnet assembly from the pumped fluid.

Abstract: Disclosed is a method of executing an electrical function, such as a fusing operation, by activation through a chip embedded photodiode through spectrally selected external light activation, and corresponding structure and circuit. The present invention is based on having incident light with specific intensity/wave length characteristics, in conjunction with additional circuit elements to an integrated circuit, perform the implementation of repairs, i.e., replacing failing circuit elements with redundant ones for yield and/or reliability. Also to perform disconnection of ESD protection device from input pad one the packaged chip is placed in system. No additional pins on the package are necessary.

Abstract: A method of testing a tristate element by applying a given value to the tristate, applying an opposite value to a keeper element connected at an output of the tristate, capturing a first value at a downstream position of the tristate, evaluating a second value at the output of the tristate using the first value, comparing the second value to the opposite value, and producing a failure code for the tristate when the second value is not equal to the opposite value. Then, applying the opposite value to the tristate, applying the given value to the keeper element, capturing the first value, evaluating the second value using the first value, comparing the second value to the given value, and producing a failure code for the tristate when the second value is not equal to the given value. A passing code for the tristate is produced when a failure code has not been produced.

Abstract: Disclosed is a method of executing an electrical function, such as a fusing operation, by activation through a chip embedded photodiode through spectrally selected external light activation, and corresponding structure and circuit. The present invention is based on having incident light with specific intensity/wave length characteristics, in conjunction with additional circuit elements to an integrated circuit, perform the implementation of repairs, i.e., replacing failing circuit elements with redundant ones for yield and/or reliability. Also to perform disconnection of ESD protection device from input pad once the packaged chip is placed in system. No additional pins on the package are necessary.

Abstract: A method of testing a tristate element by applying a given value to the tristate, applying an opposite value to a keeper element connected at an output of the tristate, capturing a first value at a downstream position of the tristate, evaluating a second value at the output of the tristate using the first value, comparing the second value to the opposite value, and producing a failure code for the tristate when the second value is not equal to the opposite value. Then, applying the opposite value to the tristate, applying the given value to the keeper element, capturing the first value, evaluating the second value using the first value, comparing the second value to the given value, and producing a failure code for the tristate when the second value is not equal to the given value. A passing code for the tristate is produced when a failure code has not been produced.

Abstract: Associated methods and a computer program product are disclosed for modifying a design of an integrated circuit. Properties are assigned to cells in an integrated circuit design. The properties include a location constraint property and a timing constraint property. When a cell is moved and one or more properties are not in compliance, other cells are moved to restore the non-compliant properties to compliance.

Abstract: A memory device using a plurality of enhanced row decode drivers for activating wordlines in a memory array is disclosed. Circuit design attributes of the enhanced row decode drivers are varied as a function of proximity to a source of a row address signal applied to each decode driver. The circuit variations are operable to reduce the leakage power of the driver by degrading performance thereof while maintaining required worst case timing. The worst case timing being defined by the timing and performance requirements for the most distant of the row decode driver circuits relative to the source of the applied row address signals.

Abstract: A rotor for a magnetic-drive centrifugal pump includes a core for supporting a magnetic assembly of magnets. An inner barrier covers at least part of the magnets. The inner barrier hermetically isolates the magnetic assembly within the impeller. For example, in one embodiment the inner barrier may be sealed or hermetically connected to the core at one or more seams. An outer barrier overlies the inner barrier.

Abstract: A method of power optimization in a memory is disclosed. The method generally includes the steps of (A) dividing a plurality of bit cells in a design of the memory into (i) a plurality of first rows storing programmed data and (ii) at least one second row storing only padding data, (B) adjusting the design such that a second power consumption in each of the second rows is lower than a first power consumption in each of the first rows and (C) generating a file defining the design as adjusted.

Abstract: A method to redistribute current demand is presented. The method includes a first step of determining timing arc data for one or more timing arcs of a circuit design. The method includes a second step of checking the timing arc data for delay shift target cells. The method includes a further step of swapping a delay shift target cell with a delay shift cell.

Abstract: A design structure for an integrated circuit that includes at least one tunneling device voltage detection circuit for generating a trigger flag signal. The tunneling device voltage detection circuit includes first and second voltage dividers receiving a supply voltage and having corresponding respective first and second internal node output voltages. The first and second voltage dividers are configured so the first output voltage is linear relative to the supply voltage and so that the second output voltage is nonlinear relative to the supply voltage. As the supply voltage ramps up, the profiles of the first and second output voltage cross at a particular voltage. An operational amplifier circuit senses when the first and second output voltages become equal and, in response thereto, outputs a trigger signal that indicates that the supply voltage has reached a certain level.

Abstract: A method to analyze timing in a circuit, generally including (A) simulating reception of an input signal and a clock signal at a first flip-flop, wherein (i) the input signal has a latest transition, (ii) the input signal arrives through a first path and (iii) the clock signal has an active edge, (B) calculating a value of a time difference between the latest transition and the active edge, (C) calculating a delay between the active edge and the latest transition appearing in an output signal, wherein (i) the delay is based on a model responding to the value, (ii) the model characterizes a clock-to-output delay as a function of the time difference and (iii) the characterization covering a range of values, (D) calculating an arrival time of the latest transition at a second flip-flop through a second signal path and (E) storing the arrival time in a recording medium.