Abstract: A method for manufacturing a polymer emulsion includes the following steps. A mixture is heated to a first temperature less than or equal to about 40° C. The mixture including about 100 to about 500 parts by weight of a monomer and about 0.5 to about 95 parts by weight of a first cross-linking agent, in which the monomer has a structure of formula (I): and R1, R2, and R3 represent H or C1-C4 alkyl group, respectively. About 0.005 to about 5 parts by weight of a first initiator is added. About 0.003 to about 5 parts by weight of a reducing agent is added to form an intermediate product. The intermediate product is heated to a second temperature less than or equal to about 92° C.

Abstract: A semiconductor package structure including a semiconductor die having a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. A first protective insulating layer covers the first and third surfaces of the semiconductor die. A redistribution layer (RDL) structure is electrically coupled to the semiconductor die and surrounded by the first protective insulating layer on the first surface of the semiconductor die. A first passivation layer covers the first protective insulating layer and the RDL structure. At least one conductive structure passes through the first passivation layer and is electrically coupled to the RDL structure. A method of forming the semiconductor package is also provided.

Abstract: The present disclosure relates to a stringed instrument resonance analysis device which uses a scientific detection method to evaluate the resonance effect of stringed instrument, wherein the stringed instrument resonance analysis device has a cabinet, a holder, a resonant sounder, a sonic generator, at least one sonic collector and a spectrum analyzer. The cabinet forms an accommodating space therein. The holder a holder is disposed in the accommodating space and used to fix and hold the stringed instrument. The resonant sounder is disposed in the accommodating space and fixed and clamped to a bridge on a loudspeaker box of the stringed instrument. The sonic generator is connected to the resonant sounder. The sonic collector is disposed in the accommodating space and adjacent to the loudspeaker box of the stringed instrument. The spectrum analyzer is connected to the at least one sonic collector.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

Abstract: A vaccine composition includes a porcine epidemic diarrhea virus (PEDV) S1 spike protein having an amino acid sequence of SEQ ID NO: 1, and an inactivated porcine epidemic diarrhea virus (PEDV). The vaccine composition is used in a method of preventing PEDV infection in swine, whereby systemic Immunoglobulin G (IgG), Immunoglobulin A (IgA) and neutralizing antibody may be successfully induced by the vaccine composition, hence providing sufficient immune protection against PEDV.

Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Abstract: Compositions including a plurality of reactive components. The reactive components each include an inorganic core with one or more photoresponsive ligand(s) covalently bonded to a surface of the inorganic core. A composition may also include a photoinitiator. Methods of making an article of manufacture includes photochemically reacting at least a portion of one or more layer(s) formed from one or more composition(s). The photochemical reaction may be carried using a laser as a source of electromagnetic radiation. An article of manufacture, which may be a three-dimensional article of manufacture, may be or is a part of a microfluidic device, HPLC column, fluidic channel, point of care device, or diagnostics device.

Abstract: A coating system comprising a vessel, a flexible container within the vessel, and a coating apparatus. The flexible container including an outlet port, wherein the flexible container is configured to contract in response to an increase in pressure within the vessel. The flexible container is configured to output a coating composition through the outlet port in response to contraction. The coating apparatus is configured to receive the coating composition from the outlet port.

Abstract: Provided herein are methods for treating or ameliorating malignant diseases, such as cancers. Also provided herein are methods of increasing the immunity of an immune cell toward malignant cells.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.

Abstract: A light modulation module, including a liquid crystal on silicon (LCoS) display panel and a temperature adjustment module, is provided. The LCoS display panel is disposed on a transmission path of an illumination beam and is configured to modulate the illumination beam. The LCoS display panel is disposed in the temperature adjustment module, which includes a temperature sensing element and a temperature control element. The temperature sensing element is disposed next to the LCoS display panel and is configured to sense an ambient temperature of the LCoS display panel. The temperature control element is disposed next to the LCoS display panel and is coupled to the temperature sensing element. The temperature control element controls a temperature of the LCoS display panel according to the ambient temperature. A reflective projection device is also provided, which is applied with the light modulation module and has good reliability and good projection quality.

Abstract: An optical module and a projector having the optical module are provided. The optical module includes a bracket, a driving component, an optical component, and a light guide element. The optical component is movably disposed on the bracket and is located on a transmission path of an image beam. The driving component is disposed between the bracket and the optical component and is configured to drive the optical component to oscillate. The light guide element is disposed at the bracket and located on the transmission path of the image beam. Here, the assembly of the optical module and the projector is easy, and the assembly yield is high.

Abstract: Provided herein are devices and systems comprising an illumination module configured to provide a source light to an optical interference module, which converts the source light to a line of light and processes light signal; an interference objective module, which handles light from the optical interference module and processes light signal generated from a sample; a two-dimensional camera configured to receive a backscattered interference signal from the sample, and a data processing module which processes the interference signal into an image.

Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Abstract: In an MRAM, each unit cell includes two non-volatile storage units, three N-type transistors and three P-type transistors. Each N-type transistor is coupled in parallel with a corresponding P-type transistor for forming a transmission gate which provides bi-directional current, thereby preventing source degeneration.