Patents by Inventor Jeng Wei

Jeng Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9379121
    Abstract: A non-volatile memory cell includes a substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type spaced apart from the first region, forming a channel region therebetween. A floating gate is disposed over and insulated from a first portion of the channel region which is adjacent the first region. A select gate is disposed over a second portion of the channel region adjacent to the second region, the select gate being formed of a metal material and being insulated from the second portion of the channel region by a layer of silicon dioxide and a layer of high K insulating material. A control gate is disposed over and insulated from the floating gate. An erase gate is disposed over and insulated from the first region, and disposed laterally adjacent to and insulated from the floating gate.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: June 28, 2016
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Chun-Ming Chen, Man-Tang Wu, Jeng-Wei Yang, Chien-Sheng Su
  • Publication number: 20160154274
    Abstract: A display module includes a light source and a display unit. The light source has an emission spectrum having maximum peak values corresponding to a first maximum peak wavelength and a second maximum peak wavelength. The display unit includes a green filter layer having a transmittance spectrum. The emission spectrum and the transmittance spectrum have a right cross-point and a left cross-point. A product of an emission intensity value of the emission spectrum corresponding to the right cross-point and a transmittance intensity value of the transmittance spectrum corresponding to the right cross-point is a first product value. A product of an emission intensity value of the emission spectrum corresponding to the left cross-point and a transmittance intensity value of the transmittance spectrum corresponding to the left cross-point is a second product value. A ratio of the first product value to the second product value is less than 20%.
    Type: Application
    Filed: February 4, 2016
    Publication date: June 2, 2016
    Inventors: Fu-Cheng Chen, Jeng-Wei Yeh, Kuei-Ling Liu
  • Publication number: 20160086962
    Abstract: A method of forming a semiconductor device starts with a substrate of silicon, a first insulation layer on the silicon, and a silicon layer on the first insulation layer. The silicon layer and the insulation layer are removed just from a second substrate area. A second insulation layer is formed over the silicon layer in the substrate first area and over the silicon in the second substrate area. A first plurality of trenches is formed in the first substrate area that each extends through all the layers and into the silicon. A second plurality of trenches is formed in the second substrate area that each extends through the second insulation layer and into the silicon. An insulation material is formed in the first and second trenches. Logic devices are formed in the first substrate area, and memory cells are formed in the second substrate area.
    Type: Application
    Filed: September 19, 2014
    Publication date: March 24, 2016
    Inventors: Chien-Sheng Su, Hieu Van Tran, Mandana Tadayoni, Nhan Do, Jeng-Wei Yang
  • Patent number: 9293358
    Abstract: A method of forming active areas and isolation regions in a semiconductor substrate using a double patterning process. The method include forming a first material on the substrate surface, forming a second material on the first material, forming a plurality of first trenches into the second material wherein the plurality of first trenches are parallel to each other, forming a second trench into the second material wherein the second trench is perpendicular to and crosses the plurality of first trenches in a central region of the substrate, filling the first and second trenches with a third material, removing the second material to form third trenches in the third material that are parallel to each other and do not extend through the central region of the substrate, and extending the third trenches through the first material and into the substrate.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: March 22, 2016
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Jeng-Wei Yang, Chien-Sheng Su
  • Patent number: 9285627
    Abstract: A display module having a light source includes a display unit. The display unit includes a first substrate, a second substrate opposite to the first substrate, a display medium and a green filter layer. The display medium is disposed between the first substrate and the second substrate. The green filter layer is disposed on the first substrate or the second substrate. When the wavelength of the light is between 380 nm and 780 nm, the spectrum of the light source passing through the green filter layer corresponds to a first energy. When the wavelength of the light is between interval of 660 and 780 nm, the spectrum of the light source passing through the green filter layer corresponds to a second energy. The ratio of the second energy to the first energy is less than 2%.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: March 15, 2016
    Assignee: INNOLUX CORPORATION
    Inventors: Fu-Cheng Chen, Jeng-Wei Yeh, Kuei-Ling Liu
  • Patent number: 9276006
    Abstract: A non-volatile memory cell including a substrate having first and second regions with a channel region therebetween. A floating gate is disposed over and insulated from a first portion of the channel region which is adjacent the first region. A select gate is disposed over and insulated from a second portion of the channel region which is adjacent to the second region. The select gate includes a block of polysilicon material and a work function metal material layer extending along bottom and side surfaces of the polysilicon material block. The select gate is insulated from the second portion of the channel region by a silicon dioxide layer and a high K insulating material layer. A control gate is disposed over and insulated from the floating gate, and an erase gate is disposed over and insulated from the first region, and disposed laterally adjacent to and insulated from the floating gate.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: March 1, 2016
    Assignee: Silicon Storage Technology, Inc.
    Inventors: Chun-Ming Chen, Man-Tang Wu, Jeng-Wei Yang, Chien-Sheng Su
  • Publication number: 20160043095
    Abstract: A non-volatile memory cell includes a semiconductor substrate of first conductivity type, first and second spaced-apart regions in the substrate of second conductivity type, with a channel region in the substrate therebetween. A floating gate has a first portion disposed vertically over a first portion of the channel region, and a second portion disposed vertically over the first region. The floating gate includes a sloping upper surface that terminates with one or more sharp edges. An erase gate is disposed vertically over the floating gate with the one or more sharp edges facing the erase gate. A control gate has a first portion disposed laterally adjacent to the floating gate, and vertically over the first region. A select gate has a first portion disposed vertically over a second portion of the channel region, and laterally adjacent to the floating gate.
    Type: Application
    Filed: July 2, 2015
    Publication date: February 11, 2016
    Inventors: Jeng-Wei Yang, Man-Tang Wu, Chun-Ming Chen, Chien-Sheng Su, Nhan Do
  • Publication number: 20150285970
    Abstract: A display apparatus comprises a display panel. The display panel emits a green light having a green energy and a green point of the CIE 1931 xy chromaticity under the operation of the highest gray level of a green image, and emits a blue light having a blue energy and a blue point of the CIE 1931 xy chromaticity under the operation of the highest gray level of a blue image. The ratio of the green energy to the blue energy is between 0.7 and 1.2. In the CIE 1931 chromaticity diagram, the coordinates of the blue point are bounded by the equation: y=?168.72x2+50.312x?3.635 and the equation: y=?168.72x2+63.81x?5.9174, while y is between 0.04 and 0.08.
    Type: Application
    Filed: June 18, 2015
    Publication date: October 8, 2015
    Inventors: Shih-Chang HUANG, Jeng-Wei YEH, Kuei-Ling LIU
  • Patent number: 9091427
    Abstract: A display apparatus comprises a display panel. The display panel emits a green light having a green energy and a green point of the CIE 1931 xy chromaticity under the operation of the highest gray level of a green image, and emits a blue light having a blue energy and a blue point of the CIE 1931 xy chromaticity under the operation of the highest gray level of a blue image. The ratio of the green energy to the blue energy is between 0.7 and 1.2. In the CIE 1931 chromaticity diagram, the coordinates of the blue point are bounded by the equation: y=?168.72x2+50.312x?3.635 and the equation: y=?168.72x2+63.81x?5.9174, while y is between 0.04 and 0.08.
    Type: Grant
    Filed: August 12, 2013
    Date of Patent: July 28, 2015
    Assignee: INNOLUX CORPORATION
    Inventors: Shih-Chang Huang, Jeng-Wei Yeh, Kuei-Ling Liu
  • Publication number: 20150206788
    Abstract: A method of forming active areas and isolation regions in a semiconductor substrate using a double patterning process. The method include forming a first material on the substrate surface, forming a second material on the first material, forming a plurality of first trenches into the second material wherein the plurality of first trenches are parallel to each other, forming a second trench into the second material wherein the second trench is perpendicular to and crosses the plurality of first trenches in a central region of the substrate, filling the first and second trenches with a third material, removing the second material to form third trenches in the third material that are parallel to each other and do not extend through the central region of the substrate, and extending the third trenches through the first material and into the substrate.
    Type: Application
    Filed: January 23, 2014
    Publication date: July 23, 2015
    Applicant: Silicon Storage Technology, Inc.
    Inventors: Jeng-Wei Wang, Chien-Sheng Su
  • Publication number: 20150193387
    Abstract: Disclosed is a cloud-based font service system to be installed in a cloud server, comprising: a glyph construction module to allow users to construct a plurality of glyph patterns in order to form a computer font; a font management module allowing users to add, modify or delete glyph patterns of computer fonts and including a font shelving tool to allow an administrator of a computer font to determine trading conditions; and a font application module to display particular glyphs of the computer font for trading. The invention allows users to select glyphs from existing computer fonts and modify them to form new computer fonts for trading.
    Type: Application
    Filed: November 21, 2014
    Publication date: July 9, 2015
    Inventors: Jan-Ming HO, Jeng-Wei LIN, Ray-I CHANG, Shu-Yu LIN, Chih-Yin WANG, You-Jyun WANG
  • Publication number: 20150008451
    Abstract: A memory device having a pair of conductive floating gates with inner sidewalls facing each other, and disposed over and insulated from a substrate of first conductivity type. A pair of spaced apart conductive control gates each disposed over and insulated from one of the floating gates, and each including inner sidewalls facing each other. A pair of first spacers of insulation material extending along control gate inner sidewalls and over the floating gates. The floating gate inner sidewalls are aligned with side surfaces of the first spacers. A pair of second spacers of insulation material each extend along one of the first spacers and along one of the floating gate inner sidewalls. A trench formed into the substrate having sidewalls aligned with side surfaces of the second spacers. Silicon carbon disposed in the trench. Material implanted into the silicon carbon forming a first region having a second conductivity type.
    Type: Application
    Filed: June 30, 2014
    Publication date: January 8, 2015
    Inventors: Chien-Sheng Su, Jeng-Wei Yang, Yueh-Hsin Chen
  • Patent number: 8871546
    Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: October 28, 2014
    Assignee: Opto Tech Corporation
    Inventors: Lung-Han Peng, Jeng-Wei Yu, Po-Chun Yeh
  • Publication number: 20140273387
    Abstract: A method of forming an MOS transistor by forming a poly gate over and insulated from a substrate, forming a layer of protective insulation material on the poly gate, and then performing a first implant of dopant material into portions of the substrate adjacent the poly gate, wherein the layer of protective insulation material and the poly gate block most or all of the first implant from reaching a portion of the substrate underneath the poly gate. One or more spacers are then formed adjacent the poly gate, followed by a second implant of dopant material into portions of the substrate adjacent to the one or more spacers.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Chien-Sheng Su, Jeng-Wei Yang, Mandana Tadayoni, Yueh-Hsin Chen
  • Publication number: 20140252308
    Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
    Type: Application
    Filed: March 7, 2013
    Publication date: September 11, 2014
    Applicant: OPTO TECH CORPORATION
    Inventors: LUNG-HAN PENG, JENG-WEI YU, PO-CHUN YEH
  • Patent number: 8809832
    Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: August 19, 2014
    Assignee: Opto Tech Corporation
    Inventors: Lung-Han Peng, Jeng-Wei Yu, Po-Chun Yeh
  • Publication number: 20140132886
    Abstract: The invention relates a display module having a light source. The display module comprises a display unit. The display unit comprises a first substrate, a second substrate opposite to the first substrate, a display medium and a green filter layer. The display medium is disposed between the first substrate and the second substrate. The green filter layer is disposed on the first substrate or the second substrate. When the wavelength of the light is between 380 nm and 780 nm, the spectrum of the light source passing through the green filter layer corresponds to a first energy. When the wavelength of the light is between interval of 660 and 780 nm, the spectrum of the light source passing through the green filter layer corresponds to a second energy. The ratio of the second energy to the first energy is less than 2%.
    Type: Application
    Filed: October 16, 2013
    Publication date: May 15, 2014
    Applicant: Innolux Corporation
    Inventors: Fu-Cheng Chen, Jeng-Wei Yeh, Kuei-Ling Liu
  • Publication number: 20140131750
    Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
    Type: Application
    Filed: January 21, 2014
    Publication date: May 15, 2014
    Applicant: OPTO TECH CORPORATION
    Inventors: LUNG-HAN PENG, JENG-WEI YU, PO-CHUN YEH
  • Patent number: 8679883
    Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.
    Type: Grant
    Filed: April 9, 2013
    Date of Patent: March 25, 2014
    Assignee: Opto Tech Corporation
    Inventors: Lung-Han Peng, Jeng-Wei Yu, Po-Chun Yeh
  • Publication number: 20140071659
    Abstract: A display apparatus comprises a display panel. The display panel emits a green light having a green energy and a green point of the CIE 1931 xy chromaticity under the operation of the highest gray level of a green image, and emits a blue light having a blue energy and a blue point of the CIE 1931 xy chromaticity under the operation of the highest gray level of a blue image. The ratio of the green energy to the blue energy is between 0.7 and 1.2. In the CIE 1931 chromaticity diagram, the coordinates of the blue point are bounded by the equation: y=?168.72x2+50.312x?3.635 and the equation: y=?168.72x2+63.81x?5.9174, while y is between 0.04 and 0.08.
    Type: Application
    Filed: August 12, 2013
    Publication date: March 13, 2014
    Applicant: InnoLux Corporation
    Inventors: Shih-Chang HUANG, Jeng-Wei YEH, Kuei-Ling LIU