Abstract: A co-crystal compound containing ammonium nitrate and benzo-18-crown-6-ether. Ammonium nitrate and benzo-18-crown-6-ether are used to form the co-crystal compound with hydrogen bonding in a mole ratio of 1:1. A melting point of the co-crystal compound falls within a range of 124˜130° C., and the co-crystal compound can be prepared by an evaporation method or an anti-solvent method. The co-crystal compound comes with a non-hygroscopic property, a low burning rate (7 MPa, 0.58 mm/s) and a high pressure index (n>0.6), which can be used for replacing the oxidizer of a common gas generator propellant.

Abstract: A liquid crystal display apparatus includes a display panel and a backlight module. The display panel includes a color filter layer having a blue filter portion. The backlight module emits light to the display panel. A peak wavelength of a blue light portion of the spectrum of the light is greater than or equal to 440 nm and smaller than or equal to 450 nm. The blue filter portion has a transmission spectrum having a first wavelength ?1 and a second wavelength ?2, and the first wavelength ?1 and the second wavelength ?2 conform to the following equation: 514 ? ? 1 2 + ? 2 2 + 0.71862 ? ? ? 2 - 0.71862 ? ? ? 1 ? 541 The first wavelength ?1 and the second wavelength ?2 are corresponding to a half level of a peak value of the transmission spectrum, and the unit thereof is nm.

Abstract: The inventors have unexpectedly discovered that shock and/or potential multi-organ failure due to shock can be effectively treated by administration of liquid high-dose protease inhibitor formulations to a location upstream of where pancreatic proteases are introduced into the gastrointestinal tract. Most preferably, administration is directly to the stomach, for example, via nasogastric tube under a protocol effective to treat shock by such administration without the need of providing significant quantities of the protease inhibitor to the jejunum and/or ileum.

Abstract: A predictive coding method for coding intra of frames is revealed. Firstly, an encoder divides an image frame into a plurality of macroblocks. Then the encoder sets predictive coding models corresponding to these macroblocks according to a ratio. The encoder performs predictive coding for coding each macroblock according to the corresponding predictive coding model so as to get and output a coded image. By the present invention, various predictive coding models are set and applied to code the different macroblocks so as to increase predictive coding efficiency. The intra prediction efficiency and image compression efficiency are improved simultaneously.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: A co-crystal compound containing ammonium nitrate and benzo-18-crown-6-ether. Ammonium nitrate and benzo-18-crown-6-ether are used to form the co-crystal compound with hydrogen bonding in a mole ratio of 1:1. A melting point of the co-crystal compound falls within a range of 124˜130° C., and the co-crystal compound can be prepared by an evaporation method or an anti-solvent method. The co-crystal compound comes with a non-hygroscopic property, a low burning rate (7 MPa, 0.58 mm/s) and a high pressure index (n>0.6), which can be used for replacing the oxidizer of a common gas generator propellant.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: A predictive coding method for coding intra of frames is revealed. Firstly, an encoder divides an image frame into a plurality of macroblocks. Then the encoder sets predictive coding models corresponding to these macroblocks according to a ratio. The encoder performs predictive coding for coding each macroblock according to the corresponding predictive coding model so as to get and output a coded image. By the present invention, various predictive coding models are set and applied to code the different macroblocks so as to increase predictive coding efficiency. The intra prediction efficiency and image compression efficiency are improved simultaneously.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: A dynamic voltage scaling scheduling method executes one of the steps. When one task in the delayed task set requires for being executed, a working voltage required for executing the task is increased, and the task is removed from the delayed task set; when one task in the delayed task set requires for sharing resources, the working voltage required by the task is set as the current working voltage or a larger one in the minimum upper bounds of all the works requiring for sharing resources; and when one task does not belong to the delayed task set, but the waiting time has exceeded the period of the work, the working voltage for executing the task is reduced, and the task is added in the delayed task set.

Abstract: A dynamic voltage scaling scheduling method executes one of the steps. When one task in the delayed task set requires for being executed, a working voltage required for executing the task is increased, and the task is removed from the delayed task set; when one task in the delayed task set requires for sharing resources, the working voltage required by the task is set as the current working voltage or a larger one in the minimum upper bounds of all the works requiring for sharing resources; and when one task does not belong to the delayed task set, but the waiting time has exceeded the period of the work, the working voltage for executing the task is reduced, and the task is added in the delayed task set.

Abstract: A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.

Abstract: A bi-directional read/program non-volatile memory cell and array is capable of achieving high density. Each memory cell has two spaced floating gates for storage of charges thereon. The cell has spaced apart source/drain regions with a channel therebetween, with the channel having three portions. One of the floating gate is over a first portion; another floating gate is over a second portion, and a gate electrode controls the conduction of the channel in the third portion between the first and second portions. A control gate is connected to each of the source/drain regions, and is also capacitively coupled to the floating gate. The cell programs by hot channel electron injection, and erases by Fowler-Nordheim tunneling of electrons from the floating gate to the gate electrode. Bi-directional read permits the cell to be programmed to store bits, with one bit in each floating gate.

Abstract: The cleaning composition has a first acid for removing copper from the silicon wafer surface, an oxidizing agent for oxidizing the silicon wafer surface to form an oxide thin film and for oxidizing barrier residues on the bevel edges, a second acid for removing the oxide thin film, and deionized (DI) water. The method involves applying the cleaning composition to the silicon wafer surface for a process time, and spin-drying the silicon wafer surface. This removes all residues from the backside surface and the bevel edges of a silicon wafer.

Abstract: The cleaning composition has a first acid for removing copper from the silicon wafer surface, an oxidizing agent for oxidizing the silicon wafer surface to form an oxide thin film and for oxidizing barrier residues on the bevel edges, a second acid for removing the oxide thin film, and deionized (DI) water. The method involves applying the cleaning composition to the silicon wafer surface for a process time, and spin-drying the silicon wafer surface. This removes all residues from the backside surface and the bevel edges of a silicon wafer.