Abstract: A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

Abstract: A method for forming a semiconductor device includes: forming, in a silicon carbide layer of a first conductivity type having a first side, a first silicon carbide region and a second silicon carbide region that forms a pn-junction with the first silicon carbide region; forming a contact region that forms an Ohmic contact with the second silicon carbide region; forming a barrier-layer on the contact region and the first silicon carbide region so that a Schottky-junction is formed between the barrier-layer and the first silicon carbide region and so that an Ohmic connection is formed between the barrier-layer and the contact region, the barrier-layer comprising molybdenum nitride; and forming a first metallization on the barrier-layer, and in Ohmic connection with the barrier-layer.

Abstract: A pump assembly has at least one electronics receiving space (54; 54; 54?). The electronics receiving space (54; 54; 54?) includes at least one defined ventilation opening (40; 40; 40?). The ventilation opening (40; 40; 40?), at an outer side of the electronics receiving space (54; 54; 54?), runs out into an air duct (41; 41; 46; 46; 48, 48?) which is led along at least one condensation surface (60; 60; 60?).

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.

Abstract: The present disclosure relates to a mixer having a mixer housing which encloses a mixing chamber, an input part which can be connected to the mixer housing and has at least two input openings for the components to be mixed, and a mixing element, at least some sections of which extend into the mixing chamber, wherein each of the input openings is flow-connected to the mixing chamber via at least one input duct, wherein there is also in the input part at least one compensation duct which connects the input openings to each other, and/or at least one holding chamber is provided in the mixing element.

Abstract: A coated article is provided with at least one infrared (IR) reflecting layer. The IR reflecting layer may be of silver or the like. In certain example embodiments, a titanium oxide layer is provided over the IR reflecting layer, and it has been found that this surprisingly results in an IR reflecting layer with a lower specific resistivity (SR) thereby permitting thermal properties of the coated article to be improved.

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

Abstract: The present invention relates to vaccine products for the treatment or prevention of viral infections. Further provided are methods of reducing contaminants associated with the preparation of cell culture vaccines. Residual functional cell culture DNA is degraded by treatment with a DNA alkylating agent, such as ?-propiolactone (BPL), thereby providing a vaccine comprising immunogenic proteins derived from a virus propagated on cell culture, substantially free of residual functional cell culture DNA.

Abstract: Methods are provided herein for determining and administering optimized dosing of therapeutic anti-CD47 agents, in a schedule that provides safe escalation of dose while achieving a therapeutic level in a clinically effective period of time. The methods can comprise the steps of clearance, escalation, and maintenance. In one embodiment the dosing regimen administers an initial (i) sub-therapeutic dose of an anti-CD47 agent or (ii) a cytoreductive therapy to achieve a safe level of circulating tumor cells for subsequent treatment (clearance); escalating the dose of an anti-CD47 agent until a therapeutic dose is reached (escalation); and maintaining the therapeutic dose for a period of time sufficient to reduce tumor cells in the bone marrow of the patient (maintenance). In an alternative dosing regimen, a patient determined to have a safe level of circulating tumor cells at presentation is treated by the steps of escalation and maintenance without initial clearance.

Abstract: A method for tempering preforms in a blowing machine, wherein at least one heating box is arranged along a transport path for the preforms. The heating box has reflective walls and forms a heating channel through which the preforms are guided. The heating box also has a heater for heating the preforms in the heating channel, and a cooling device, having a blower, for cooling the reflective walls. The walls are cooled by a quantity of air flowing along the walls outside the heating channel. The heating output of the heater is adjustable. A control device provides open-loop and closed-loop control of the cooling output produced by the cooling device, in particular the supplied quantity of air, depending on the respective heating output of the heater, depending on a measurement of the heating output.

Abstract: A method for improving the accuracy of a digital medical model of a part of a patient, the method includes obtaining a set of at least 2 medical images of the patient, where an element comprising a predefined geometry and/or predefined information was attached to the patient during the recording of the medical images; obtaining at least 2 tracking images taken with at least one camera having a known positional relationship relative to the medical imaging device, said tracking images depicting at least part of the element; determining any movement of the element between acquisition of the at least 2 tracking images; and generating the digital medical model from the acquired medical images, wherein the determined movement of the element is used to compensate for any movement of the patient between the acquisition of the medical images.

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

Abstract: Filter media, filter elements, and methods for filtering an gas stream are described herein. In some embodiments, the filter media may comprise a fiber web comprising a plurality of fibers and having a particular oil repellency level. For instance, in certain embodiments, the surface chemistry of the fiber web may be tailored to impart a particular surface energy density that matches the surface energy density of the fluid (e.g., an oil, a lubricant, and/or a cooling agent) being removed from the gas stream. In some embodiments, the fiber web may be wrapped around a core. For example, the fiber web may be wrapped around the core such that it forms two or more layers around the core. In some cases, the fiber web may be perforated. In certain embodiments, an gas stream comprising a fluid (e.g., an oil, a lubricant, and/or a cooling agent) may be passed through the fiber web, filter media, and/or filter element such that at least a portion of the fluid coalesces on the fiber web.

Abstract: Compositions and methods are provided relating to anti-SIRP? agonist antibodies. The antibodies of the invention bind to human SIRP?, and activate signaling, thereby inhibiting processes mediated by SIRP?, including without limitation phagocytosis. Embodiments of the invention include isolated antibodies and derivatives and fragments thereof, pharmaceutical formulations comprising one or more of the anti-SIRP? agonist antibodies; and cell lines that produce these antibodies.

Abstract: In certain example embodiments, a coated article includes a carbon-doped zirconium based layer before heat treatment (HT). The coated article is heat treated sufficiently to cause the carbon-doped zirconium oxide and/or nitride based layer to result in a carbon-doped zirconium oxide based layer that is scratch resistant and/or chemically durable. The doping of the layer with carbon (C) has been found to improve wear resistance.

Abstract: Anti-SIRP? antibodies, including multi-specific anti-SIRP? antibodies, are provided, as are related compositions and methods. The antibodies of the disclosure bind to SIRP? and can block the interaction of CD47 on one cell with SIRP? on a phagocytic cell. The subject anti-SIRP? antibodies find use in various therapeutic methods. Embodiments of the disclosure include isolated antibodies and derivatives and fragments thereof, pharmaceutical formulations comprising one or more of the anti-SIRP? antibodies; and cell lines that produce the antibodies. Also provided are amino acid sequences of exemplary anti-SIRP? antibodies.

Abstract: Chemical compounds are useful in the treatment of a subject afflicted by a thyroid disease. The compounds exhibit activity as thyroid-stimulating hormone receptor (TSHR) antagonists and can be used in the treatment of hyperthyroidism, Graves' disease, Graves' Ophthalmopathy and thyroid cancer.