Abstract: A manufacturing facility for assembling a jacket structure 3 comprising a number of subcomponents 10, said subcomponents 10 including a prefabricated brace 12 and a pair of prefabricated legs 30, 30?, wherein the manufacturing facility comprises a number of first supports 20 for supporting each of the prefabricated legs 30,30?, a number of second supports 40 for supporting the prefabricated brace 12 and a welding unit for welding the prefabricated brace 12 to the prefabricated legs 30,30?.

Abstract: A semiconductor device includes a plurality of drift regions of a plurality of field effect transistor structures arranged in a semiconductor substrate. The plurality of drift regions has a first conductivity type. The semiconductor device further includes a plurality of compensation regions arranged in the semiconductor substrate. The plurality of compensation regions has a second conductivity type. Each drift region of the plurality of drift regions is arranged adjacent to at least one compensation region of the plurality of compensation regions. The semiconductor device further includes a Schottky diode structure or metal-insulation-semiconductor gated diode structure arranged at the semiconductor substrate.

Abstract: A wearable toy system comprising a wearable component, a toy housing and at least one replaceable toy; wherein the wearable component comprises at least one fastening member for securing the wearable component to a part of a user's body; wherein the toy housing comprises a toy-receiving base and a cover, the toy-receiving base being adapted to receive at least a base member of the replaceable toy, the toy-receiving base and the cover together defining a void for accommodating at least a part of the replaceable toy when the base member is received by the toy-receiving base and when the cover is in a closed state; wherein the toy housing defines at least one opening when the cover is in the closed state, the opening allowing one or more parts of the replaceable toy to extend out of the toy housing.

Abstract: A method for improving the accuracy of a digital medical model of a part of a patient, the method includes obtaining a set of at least 2 medical images of the patient, where an element including a predefined geometry and/or predefined information was attached to the patient during the recording of the medical images; obtaining at least 2 tracking images taken with at least one camera having a known positional relationship relative to the medical imaging device, the tracking images depicting at least part of the element; determining any movement of the element between acquisition of the at least 2 tracking images; and generating the digital medical model from the acquired medical images, wherein the determined movement of the element is used to compensate for any movement of the patient between the acquisition of the medical images.

Abstract: Therapeutic and diagnostic methods are provided, which methods relate to the induction of expression of calreticulin on phagocytic cells. Specifically, the methods relate to macrophage-mediated programmed cell removal (PrCR), the methods comprising increasing PrCR by contacting a phagocytic cell with a toll-like receptor (TLR) agonist; or down-regulating PrCR by contacting a phagocytic cell with an inhibitor of Bruton's tyrosine kinase (BTK). In some embodiments, an activator of TLR signaling or a BTK agonist is provided in combination with CD47 blockade.

Abstract: Anti-SIRP? antibodies, including multi-specific anti-SIRP? antibodies, are provided, as are related compositions and methods. The antibodies of the disclosure bind to SIRP? and can block the interaction of CD47 on one cell with SIRP? on a phagocytic cell. Antibodies that are bispecific for SIRP? and a second antigen are termed Bi-specific Macrophage Enhancing (BiME) antibodies and have emergent properties. The subject anti-SIRP? antibodies find use in various therapeutic methods. Embodiments of the disclosure include isolated antibodies and derivatives and fragments thereof, pharmaceutical formulations comprising one or more of the anti-SIRP? antibodies; and cell lines that produce the antibodies. Also provided are amino acid sequences of exemplary anti-SIRP? antibodies.

Abstract: Naturally-derived compounds having various structures elicit the perception of salty taste, enhance the perception of salty taste of a salt, or act at one or more sodium channels. Food products may include such naturally-derived compounds, which may be used to reduce the sodium content, while imparting a similar level of saltiness.

Abstract: Methods, kits, and compositions are provided herein that can be used to treat ovarian cancer using an anti-CD47 antibody. The anti-CD47 antibody can be used alone or in combination with one or more additional agent such as chemotherapy.

Abstract: A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a Schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The Schottky-junction forming material forms at least one Schottky contact with the amorphous n-doped semiconductor surface layer.

Abstract: A computer-implemented method for generating a corresponding 3D mesh representing a 3D object, includes transforming an initial three-dimensional mesh into a planar mesh, wherein each vertex or edge of the planar mesh is a transformation of a vertex or edge from the initial three-dimensional mesh; and sampling the planar mesh to generate a plurality of samples such that each sample comprises a three-dimensional coordinate representing a point in a three-dimensional space derived and/or taken directly from the initial three-dimensional mesh, and a coordinate representing a position of the sample relative to other samples; and generating the sampled matrix based on the plurality of samples; and representing the sampled matrix as a corresponding 3D mesh.

Abstract: A computerized method for providing a service is described. The method may instantiate an instance of a process object. The process object may be configured to manage two or more business process objects of one or more backend systems to provide the service. The service may be performed utilizing the process object.

Abstract: Anti-SIRP? antibodies, including multi-specific anti-SIRP? antibodies, are provided, as are related compositions and methods. The antibodies of the disclosure bind to SIRP? and can block the interaction of CD47 on one cell with SIRP? on a phagocytic cell. The subject anti-SIRP? antibodies find use in various therapeutic methods. Embodiments of the disclosure include isolated antibodies and derivatives and fragments thereof, pharmaceutical formulations comprising one or more of the anti-SIRP? antibodies; and cell lines that produce the antibodies. Also provided are amino acid sequences of exemplary anti-SIRP? antibodies.

Abstract: The invention relates to a method for producing containers (14) from preforms (12) made of thermoplastic material by means of a blow molding machine (10) comprising at least one temperature control device (26) and one forming device having at least two forming stations (16), wherein the preforms (12) are temperature controlled by means of the temperature control device (26) on the basis of specifiable first control parameters, and wherein one temperature-controlled preform (12) is formed by means of one of the forming stations (16), respectively, on the basis of specifiable second control parameters into a container (14), wherein at least one of the second control parameters is individually specified for each of the forming stations (16). The invention furthermore relates to a blow molding machine (10), designed for executing the method according to the invention, for producing containers (14) from preforms (12) made of thermoplastic material.

Abstract: A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.

Abstract: A method of controlling a wind turbine generator (1) comprising an electrical generator (10) and a power converter (12), the power converter (12) comprising an electrical switch (14a, 14b) that is configured to process electrical power produced by the electrical generator (10), the method comprising: controlling an output from the electrical switch (14a, 14b) using a variable pulse-width modulated control signal, thereby to control characteristics of output power from the power converter (12); acquiring sample data (26) relating to an electronic signal within the wind turbine generator (1), wherein the sample data (26) is used for controlling the wind turbine generator (1); and dynamically adjusting a frequency (30) at which the sample data is acquired to synchronise data acquisition with a carrier frequency (24) of the control signal.

Abstract: A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

Abstract: A method for forming a semiconductor device includes: forming, in a silicon carbide layer of a first conductivity type having a first side, a first silicon carbide region and a second silicon carbide region that forms a pn-junction with the first silicon carbide region; forming a contact region that forms an Ohmic contact with the second silicon carbide region; forming a barrier-layer on the contact region and the first silicon carbide region so that a Schottky-junction is formed between the barrier-layer and the first silicon carbide region and so that an Ohmic connection is formed between the barrier-layer and the contact region, the barrier-layer comprising molybdenum nitride; and forming a first metallization on the barrier-layer, and in Ohmic connection with the barrier-layer.