Abstract: A separable and reconnectable connection for electrical equipment is provided that is suitable for miniaturization in which vertical interdigitating members integrally attached and protruding from a planar portion are accommodated in control of damage in lateral displacement that occurs on mating with an opposite similar contact. Displacement damage is averted through accommodating lateral stresses by providing one or more of a conformal opposing contact, by strengthening through coating and base reinforcement and a deformable coating. The contacts are fabricated by physical and chemical processes including sputtering, normal and pulse electroplating and chemical vapor deposition. Pulse electroplating of palladium provides a dendritic deposit of uniform height, uniform rounded points and less branching. The contacts on completion are provided with a surrounding immobilizing material that enhances rigidity.

Abstract: A solid state microwave generator is utilized as an excitation source for material/ plasma processes. The invention provides very close precise control of the solid state device's power levels to control the ultimate power output and frequency which control is not readily possible with vacuum tube devices. Utilizing the concepts of the invention the total power generated by the system may be easily varied and, further, the power may be easily monitored and used to control other device parameters such as frequency and the like. Because of the degree of control possible within the overall process system of the invention any measurable physical property of the process such as temperature, power, color (e.g., optical pyrometer), or the like that can be monitored and converted to a control signal can be utilized by the present system to carefully control the overall process conditions. These control features are lacking in currently available vacuum tube microwave devices.

Abstract: A separable and reconnectable connection for electrical equipment is provided that is suitable for miniaturization in which vertical interdigitating members integrally attached and protruding from a planar portion are accommodated in control of damage in lateral displacement that occurs on mating with an opposite similar contact. Displacement damage is averted through accommodating lateral stresses by providing one or more of a conformal opposing contact, by strengthening through coating and base reinforcement and a deformable coating. The contacts are fabricated by physical and chemical processes including sputtering, normal and pulse electroplating and chemical vapor deposition. The contacts on completion are provided with a surrounding immobilizing material that enhances rigidity.

Abstract: A high-efficiency, low-temperature, plasma-enhanced chemical vapor deposition (PECVD) system for growing or depositing various types of thin films on substrate surfaces, or etching such surfaces, using substrates of materials such as silicon, plastic, etc. The system uses a hollow-cathode-effect electron source with a surrounding confining electrode to create a plasma at the substrate surface to insure that the density of reactive species is both enhanced and localized at the substrate surface thus causing the rate of growth of the films, or the etch rate, to increase so that the process can take place at much lower temperatures and power levels. A particular embodiment involves the growing of hydrogenated amorphous silicon (a:Si:H), at room temperature, on silicon using a tubular reactor containing a cylindrical electrode lining the inside of the reactor walls acting as a counter electrode for an rf-powered, substrate-supporting electrode near the center of the reactor.

Abstract: The invention relates to a dry method for depositing a material on a substrate having nucleating sites for the material which includes deposition of a material in the vapor phase on the substrate and simultaneous ablation of the substrate by ablation methods for controlled removal of the nucleating sites from the substrate. The removal of the nucleating sites is controlled to minimize or selectively prevent coating of the substrate by the material. The method can be used to form material patterns on the substrate such as electrical circuits or for adhering material to a substrate that is difficult to metallize such as organic polymers or ceramics.

Abstract: A process for forming chromium dioxide thin films which are receptive to high density magnetic recording. The process comprises depositing both chromium and oxygen on a substrate by evaporative techniques and concurrently bombarding the substrate with high energy ions of at least one of the film constituents to form a latent CrO.sub.x film forming layer. The process is carried out at approximately room temperature.The as-grown latent film forming layer is subsequently heat treated by a rapid thermal anneal step which raises the temperature of the as-grown film to about 500.degree. C. The rapid thermal anneal step preferably comprises a series of at least five separte pulses over a 10-second time span. After the rapid thermal anneal, the sample is rapidly quenched to room temperature.

Abstract: A composition of a metallic compound represented by the formula MT, and G is provided by sputtering an M.sub.x G.sub.100-x target. M is a metal selected from the group of titanium, hafnium, zirconium, and mixtures thereof. T is selected from the group of N, C, and mixtures thereof. G is a metal selected from the group of gold, platinum, and palladium. X is an integer from about 65 to about 95. Also provided are substances coated with the composition and process for depositing the composition on substrates.

Abstract: A composition of a metallic compound represented by the formula MT, and G is provided by sputtering an M.sub.x G.sub.100-x target. M is a metal selected from the group of titanium, hafnium, zirconium, and mixtures thereof. T is selected from the group of N, C, and mixtures thereof. G is a metal selected from the group of gold, platinum, and palladium. X is an integer from about 65 to about 95. Also provided are substrates coated with the composition and process for depositing the composition on substrates.

Abstract: Aluminum alkoxide or aluminum aryloxide is produced by dissolving aluminum in gallium and/or gallium-based alloy wherein the gallium and/or gallium-based alloy is in a liquid form. The aluminum is then reacted with an organic compound having at least one reactive hydroxyl group to thereby obtain the aluminum alkoxide or aluminum aryloxide.

Abstract: A spherical grid for use in instrumentation comprising a rigid non-magnetic frame having a pattern of holes. Into each hole a flat wafer is placed, each wafer having etched therein holes defining the grid mesh. The frame maintains the geometric conformal shape allowing large units to be constructed.

Abstract: Plasma enhancement is achieved in a plasma glow system by increasing the number of photoelectric electrons in the plasma glow by producing photoelectrons from the surface of a target in the system by the use of a radiation source. This is more particularly accomplished by flooding the surface of the target with a UV laser beam during the plasma process where emitted photoelectrons are injected into the plasma to increase the plasma density.The plasma enhancement is used in a sputter etching/deposition system which includes a chamber containing a cathode, a target, a substrate platform containing substrate and a pump. An ultraviolet light source such as a UV laser and focussing optics for focussing the UV radiation onto the target through a UV transmission window are also provided. A plasma region in the chamber is enhanced by photons from the laser striking the target and producing photoelectrons which are injected into the plasma to increase its density.

Abstract: A metallic hollow cathode electrode structure for use in a RF-RIE sputter/etch system. The electrode defines a critical aspect ratio hollow cathode volume. In accordance with one embodiment of the invention, the electrode structure may consist of two closely spaced metal elements separated by a distance of a few centimeters. The elements are electrically and structurally connected by supports around their outer rim. An RF voltage is applied between the improved hollow cathode electrode structure and an evacuated chamber containing same through a suitable matching network. A plasma gas is supplied to the system from a point outside the electrodes and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. Samples to be sputtered are then placed on either of the inside electrode surfaces for sputter/etching. The aspect ratio (longest dimension of one of the elements/spacing between the elements) should be at least 4.

Abstract: A long life high current density hollow cathode electron beam source for use in various E-beam apparatus which uses an ionizable gas within the hollow cathode. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages.

Abstract: A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc-source combined with a conventional plasma sputter etching/deposition system such as a magnetron. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic field and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.

Abstract: Apparatus and method for generating low energy, high intensity ion beams. A Hall current ion source is provided to conduct many integrated circuit fabrication processes which require low energy ion bombardment such as surface cleaning. Ion sources are provided which have tapered magnetic pole pieces for controlling the dispersion pattern of the ion beam.

Abstract: A technique for providing an ion beam of variable focussing (concentration) is described using a flexible grid for extracting and accelerating ions from an ion plasma. The grid is electrically conducting and will bow depending on a voltage difference between it and the ion plasma. This bowing of the grid from its initial planar configuration provides focussing of the ion beam. The amount of focussing depends upon the amount the grid is bowed, which in turn depends upon the voltage difference between it and the ion plasma. The same ion source/flexible grid combination can be used for different operations as for example, providing a collimated, low energy ion beam over a large area and then for providing a focussed ion beam of high energy onto a small area.

Abstract: This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.

Abstract: Method and apparatus for generating high current, negative ion beams. A plasma source of ions of one charge polarity includes an accelerator for accelerating the ions toward a target having a plurality of apertures. An electric field directs the ions exiting the apertures against a target surface which is arranged to emit ions of an opposite polarity. The electric field directs the opposite polarity ions away from the target forming a stream of oppositely charged ions.

Abstract: Photon energy can be efficiently absorbed by a material having a reflectivity control surface region wherein the index of refraction, the thickness, and the contour of the external surface of the reflecting control surface region operate to curtail all reradiation components.

Abstract: A compact ion source plug connected to a socket is provided. The source uses a magnetic pole piece which includes a center pole piece and a surrounding circumferential pole piece to form an arcuate fringe field. Cathode elements and anode elements are located within the fringe field for producing a plasma. A source body terminates at one end with at least one grid and forms a plasma chamber with a base member. All of the electrical connections to the plasma generator and the gas connection are through a plug formed on the opposite side of the base member.