Abstract: The invention is a room-temperature dry process for texturing copper on polyester, to improve adhesion of coatings to the copper surface through mechanical as well as chemical bonding. An iodine plasma is produced by backfilling an evacuated chamber with iodine and applying an RF potential. The iodine plasma includes both positive and negative iodine ions. Unprotected surface areas of the copper form a copper iodide; when the copper iodide is removed, the remaining surface is highly textured. The associated polyester is not damaged. The copper iodide is conveniently removed by a 10% hydrochloric acid solution which has no damaging effects on the associated polyester or on the metallic copper, or on associated polyester in a plastic laminated with copper.

Abstract: A negative ion etching process is described for etching a substrate, where the negative ions are sputtered from a target by a sputtering gas. The negative ions are released from the target and are accelerated toward the substrate, which they strike as either negative ions or energetic neutrals. The improvement adds an inhibiting substance (hydrogen) to the sputtering gas to dramatically affect the etch rates of the substrate. In one example, the ratio of the etch rates of Si and SiO.sub.2 are changed by large amounts by the addition of hydrogen to a sputtering gas comprising an inert species, such as argon.

Abstract: An electrostatic clutch operable by the Johnsen-Rahbek effect, which may be used to operate, e.g., a print hammer device, is described, said clutch comprising a rotatable drum and a band engagable therewith, wherein the engagable surface of the drum is a semiconductive surface prepared by sputtering or vapor depositing a layer of substantially pure silicon carbide onto a conductive substrate.

Abstract: A method and system for deflecting a broad ion plasma beam which includes an ion source for forming an ion plasma, an extraction means for extracting a broad ion plasma beam from the ion plasma, and deflection means including a non-grounded surface located in the path of the ion plasam beam and at an angle to the path for deflecting the ion plasma beam to a target material. A grounded, screen grid is located in front of the deflecting means in the path of the ion plasma. The screen grid has openings which permit passage of the ions in the ion plasma, but block passage of the electrons. The plasma beam is deflected by the deflection means and the grounded, screen grid onto the target material for sputter cleaning, deposition and ion milling applications.

Abstract: A solid state renewable energy supply is provided by the oxidation of a passivating oxide forming solid state material in the presence of oxygen under the control of a passivating oxide preventing agent forming thereby an oxide reaction product, heat and hydrogen. The oxide reaction product is then electrolytically or thermo chemically reduced to recover the solid state material. Aluminum is hydrolized in the presence of gallium producing aluminum oxide, heat and hydrogen. The aluminum oxide is in turn electrolyzed back to aluminum.

Abstract: A surface reaction process for controlled oxide growth is disclosed using a directed, low energy ion beam for compound or oxide formation. The technique is evaluated by fabricating Ni-oxide-Ni and Cr-oxide-Ni tunneling junctions, using directed oxygen ion beams with energies ranging from about 30 to 180 eV. In one embodiment, high ion current densities are achieved at these low energies by replacing the conventional dual grid extraction system of the ion source with a single fine mesh grid. Junction resistance decreases with increasing ion energy, and oxidation time dependence shows a characteristic saturation, both consistent with a process of simultaneous oxidation and sputter etching, as in the conventional r.f. oxidation process. In contrast with r.f. oxidized junctions, however, ion beam oxidized junctions contain less contamination by backsputtering, and the quantitative nature of ion beam techniques allows greater control over the growth process.

Abstract: A high brightness, essentially monoenergetic electron source is constructed in solid state material by providing a semiconductor body with an electron confinement barrier over most of the surface, the barrier having a relatively small opening exposing the semiconductor body, in the relatively small opening a material is placed in contact with the semiconductor body that has a work function that is lower than the energy of excited electrons in the semiconductor. In this structure electrons from hole-electron pairs generated in the semiconductor are repelled and recombination is inhibited by the barrier except in the relatively small opening where they are injected into the surrounding environment through the lower work function material. The hole-electron pair generation may be by irradiation or by electrical injection. The electron source is useful for such applications as high brightness sources, digital communications, cathode ray tube electron sources and scanning electron microscopes.

Abstract: Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support.

Abstract: The present invention describes an ion source which is capable of producing relatively high density ion currents. The ion source employs an electrically biased ionic conductor to supply ions from a reservoir of the atomic species.

Abstract: An energetic particle beam is accelerated towards a sputtering target. The target is located at an angle to the path of the beam (although it need not be). The target material which is dislodged by the ion beam can be directed towards a substrate. The material is composed of atoms forming both positive and negative ions. The voltage difference between the target and the substrate can be adjusted to be positive or negative so that either positive ions or negative ions can be accelerated to the substrate by means of adjusting the target-substrate voltage difference. In addition, means can be provided for collecting electrons included with the ions moving towards and away from the target. Such means can comprise a grid located adjacent to the target. It is also possible that electrons can be collected by means of an electric field confining structure which permits the ions to pass through while the electrons are deflected. Techniques.

Abstract: A sputtered thin film of an amorphous material composed of a magnetic transition metal X and element Y plus possibly an element Z has low coercivity for domains in the plane, has a well defined and stable magnetic easy axis which is extremely stable without heating above the Curie point, with a high and flat value of permeability from low frequencies to greater than 10 megahertz. Metal X can include at least one of Fe, Ni, and Co. Element Y can include at least one of Si and B. Element Z can be included composed of Cr, for example.

Abstract: These amorphous metal-alloy films include nitrogen, greater than about one atomic percent at least one transition metal selected from Cr, Fe, Co and Ni with at least one element forming an amorphous alloy therewith, selected from the "glass forming" elements, i.e., B, Si, Al, C and P. The alloys can be formed by deposition in a vacuum chamber. When films are sputtered, the target is composed of the above alloy elements with at least one element selected from each of the transition metal and glass forming element groups. Sputtering occurs in an atmosphere above about 2% vol. N.sub.2 gas mixed with an inert gas, e.g., Ar. Alloys produced include N, i.e., (Co-Fe-B)N and (Fe-B)N. Above about 2 atomic % N in the film, films have lower values of saturation magnetization 4.pi.M.sub.s. Above a 2% vol. N.sub.2 gas in the plasma, electrical resistivity increases. Over 0.5% vol. N.sub.2 gas in the plasma, the film's effective perpendicular anisotropy field H.sub.k.sup.* increases.

Abstract: Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support. The resist is for example a contamination film from a vacuum pump oil used in evacuating the apparatus used to perform the process, e.g. silicone oil.

Abstract: The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial dislocations. Planar defects include twins, stacking faults, grain boundaries and surfaces. Such defects normally contain recombination centers at which electrons and holes generated in the semiconductor region recombine with loss to the external current of the charge carried thereby. Through application of the principles of this invention, especial dopant concentrations and conductivity regions are established in a finite region around the linear and planar defects so that electrons and holes which are generated in the semiconductor region by incident radiation are substantially collected for external current as consequence thereof.

Abstract: A method is disclosed for fabricating a thin elemental semiconductor, e.g., Si or Ge, film with columnar grains in a filamentary structure, by the use of an intermetallic compound incorporating the elemental semiconductor to form a nucleating layer for the growth of the semiconducting film. The semiconductor is grown from vapor phase by the technique of either vacuum evaporation or chemical vapor deposition, e.g., by decomposition of SiH.sub.4. The semiconductor e.g., Si, is initially deposited onto a thin film of a specific metal, e.g., Pt or Ni, on any inert substrate, e.g., SiO.sub.2 or Al.sub.2 O.sub.3, which is held at a temperature, e.g., 900.degree. C, above the eutectic point, i.e., 830.degree. C, of an intermetallic compound and the metallic film, and below the eutectic point, i.e., 979.degree. C, of another intermetallic compound and the semiconductor.

Abstract: Bombardment some intermetallic compounds above a sufficient target voltage V.sub.o can be used for etching substrates. Etching a substrate located in an evacuated chamber involves bombardment of an intermetallic compound or alloy comprising for example Au, Pt, etc. and a metallic element such as Eu, La, Cs, etc. with ions so that a large flux of negative Au, Pt, etc. ions is produced which etches a substrate located nearby. Such bombardment is achieved by placing an Au, Pt, etc. intermetallic composition target in a sputtering chamber using an argon sputtering gas, located opposite from a substrate. A gold alloy or compound target can be SmAu, EuAu, LaAu, CsAu, etc. The target of Au, Pt, etc. and a rare earth element, etc. is bombarded by sputtering gas atoms excited by RF or D.C. energy, creating negative metal ions by sputtering.

Abstract: Apparatus using amorphous magnetic compositions having uniaxial anisotropy include bubble domain apparatus, light modulating apparatus, permanent magnet systems, and tape and disc information handling systems. The amorphous magnetic composition can be prepared in thin film or bulk form or as particles in a binder. The anisotropy can be parallel to the plane of a film of this material or perpendicular to the film plane. The amorphous material is comprised of a single element or is a multicomponent system where as at least one of the components has an unimpaired spin so that the composition has a net magnetic moment. The amorphous composition exists as a microcrystalline structure having localized atomic ordering over a distance 25-100 A, or as a substantially amorphous structure where localized atomic ordering is over distances less than 25A. Binary and ternary compositions, either alloys or compounds, are suitable.

Abstract: A beam addressable file using as a storage medium an amorphous magnetic composition having uniaxial anisotropy. The storage medium can be prepared in thin film or bulk form or as particles in a binder. The storage medium can be comprised of a single element or a multicomponent system where at least one of the components has an unpaired spin so that the composition has a net magnetic moment. The storage comosition exists in a microcrystalline structure (i.e., it has localized atomic ordering over a distance 25-100 angstroms) and also in a substantially amorphous structure (i.e., when the composition has localized atomic ordering only over distances less than 25 angstroms). Binary and ternary compositions, either alloys or compounds, are suitable. particularly good examples are combinations of rare earth elements and transition metal elements.