Abstract: A method of forming a dielectric layer, the method including sequentially forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate by performing a plasma-enhanced atomic layer deposition process, wherein a first nitrogen plasma treatment is performed after forming the first oxide layer.

Abstract: A conductive pattern structure includes a first insulating interlayer on a substrate, metal wiring on the first insulating interlayer, a second insulating interlayer on the metal wiring, and first and second metal contacts extending through the second insulating interlayer. The first metal contacts contact the metal wiring in a cell region and the second metal contact contacts the metal wiring in a peripheral region. A third insulating interlayer is disposed on the second insulating interlayer. Conductive segments extend through the third insulating interlayer in the cell region and contact the first metal contacts. Another conductive segment extends through the third insulating interlayer in the peripheral region and contacts the second metal contact. The structure facilitates the forming of uniformly thick wiring in the cell region using an electroplating process.

Abstract: Methods of forming conductive pattern structures form an insulating interlayer on a substrate that is partially etched to form a first trench extending to both end portions of a cell block. The insulating interlayer is also partially etched to form a second trench adjacent to the first trench, and a third trench extending to the both end portions of the cell block. The second trench has a disconnected shape at a middle portion of the cell block. A seed copper layer is formed on the insulating interlayer. Inner portions of the first, second and third trenches are electroplated with a copper layer. The copper layer is polished to expose the insulating interlayer to form first and second conductive patterns in the first and second trenches, respectively, and a first dummy conductive pattern in the third trench. Related conductive pattern structures are also described.

Abstract: A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers.

Abstract: A method of encrypting a message for message integrity is provided. In the method, a random number is generated, a first ciphertext is generated by encrypting the message by using the generated random number, a hash value of the first ciphertext is calculated, an encryption key is generated by using the hash value of the first ciphertext and a shared key, a second ciphertext is generated by encrypting the random number by using the encryption key, and the first and second ciphertexts are combined.

Abstract: The present invention relates to an apparatus for preventing mud from being hardened in a drain holding tank, in an apparatus that treats drains generated during the marine drilling of petroleum or gas. The apparatus for preventing mud from being hardened in a drain holding tank includes a drain holding tank which gathers a drain being generated in a drilling process; a mud re-compounding pump which circulates a fluid having a pressure that is higher than a predetermined value by spouting the fluid to an area of the drain holding tank where the mud is stored, to prevent mud included in the drain from being hardened in the drain holding tank; a transfer pump which transfers the mud; and a waste mud tank, configured to gather the mud. The apparatus for preventing mud from being hardened in a drain holding tank can circulate the mud at an area of the drain holding tank in which the mud is stored for a period of time, to prevent the mud from being hardened.

Abstract: Provided are a method and an apparatus for communication based on certification using a static identifier and an updatable dynamic identifier allowing a verified client to access a server.

Abstract: Provided are methods of generating and verifying an electronic signature of software data, wherein software data is split into a plurality of blocks, electronic signatures corresponding to each of the blocks are generated, and some of the electronic signatures are randomly selected for verification. Accordingly, a time required for verifying an electronic signature can be reduced while maintaining the advantages of an electronic signature system.

Abstract: An apparatus and method of checking adjacency between devices are provided. A challenge response based round trip time (RTT) checking method includes: generating a random number; encrypting the random number using a symmetrical key; transmitting a challenge request message including the encrypted random number to a device; receiving a challenge response message including the random number from the device which received the challenge request message and decrypted the encrypted random number using the symmetrical key, from the device; and determining an RTT based on a time when the challenge response message is received and a time when the challenge request message is transmitted.

Abstract: Provided are a method and host device for using content using a mobile card, and a mobile card. The method includes storing an identifier (ID) of the mobile card, a global key, and a content key encrypted by a secret key of the mobile card, generating a combined key of the ID and the global key, generating a first cryptogram, in which the content key encrypted by the secret key is encrypted by the combined key, transmitting the first cryptogram to the mobile card, receiving from the mobile card a second cryptogram, in which the content key is encrypted by the combined key, and decrypting the second cryptogram. Accordingly, a user can use encrypted content from a remote place.

Abstract: A method of encrypting a message for message integrity is provided. In the method, a random number is generated, a first ciphertext is generated by encrypting the message by using the generated random number, a hash value of the first ciphertext is calculated, an encryption key is generated by using the hash value of the first ciphertext and a shared key, a second ciphertext is generated by encrypting the random number by using the encryption key, and the first and second ciphertexts are combined.

Abstract: A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber is etched with the plasma of a non-hydrogenous second gas. Thus, the etching selectivity can be improved and the particles are prevented from depositing and/or forming on the substrate.

Abstract: A method for forming a tungsten contact plug of a semiconductor device including depositing an insulating layer on a semiconductor substrate, etching the insulating layer to form a contact hole, which exposes a conductive region, forming a barrier layer on the semiconductor substrate having the contact hole, changing characteristics of a portion of the barrier layer on the insulating layer and the portion of the barrier layer in the contact hold such that the characteristics between the barrier layer on the insulating layer and the barrier layer in the contact hole differ, depositing a tungsten layer for forming the tungsten contact plug, on the barrier layer, and removing the tungsten layer from the upper portion of the insulating layer to planarize the semiconductor device.

Abstract: In a method of forming a polycide layer and method of manufacturing a semiconductor device having the polycide layer, the method may include forming a preliminary polysilicon layer doped with first type impurities on a substrate having a first region and a second region, implanting second type of impurities into a portion of the preliminary polysilicon layer on the second region, heat treating the preliminary polysilicon layer to electrically activate the impurities, removing a portion of an upper surface of the heat treated preliminary polysilicon layer to obtain a polysilicon layer, forming a metal silicide layer on the polysilicon layer, and patterning the polysilicon layer and the metal silicide layer to form a first type gate electrode on the first region and to form a second type gate electrode on the second region.

Abstract: A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.

Abstract: A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.

Abstract: A method for forming a tungsten contact plug of a semiconductor device including depositing an insulating layer on a semiconductor substrate, etching the insulating layer to form a contact hole, which exposes a conductive region, forming a barrier layer on the semiconductor substrate having the contact hole, changing characteristics of a portion of the barrier layer on the insulating layer and the portion of the barrier layer in the contact hold such that the characteristics between the barrier layer on the insulating layer and the barrier layer in the contact hole differ, depositing a tungsten layer for forming the tungsten contact plug, on the barrier layer, and removing the tungsten layer from the upper portion of the insulating layer to planarize the semiconductor device.

Abstract: A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.

Abstract: A conductive pattern having a surface including silicon is formed on a substrate of a semiconductor device and a conduction region having a surface including silicon is formed in the substrate. A radio frequency etching process is performed ex-situ to remove impurities from a resultant structure and to improve surface characteristics of the conduction region. Residues generated during the radio frequency etching process are removed from the conductive pattern and the conduction region by a cleaning process. A metal film is formed on the conductive pattern and the conduction region. A silicide film is formed on the conductive pattern and the conduction region by reacting metal of the metal film and silicon in the conductive pattern and the conduction region. With a radio frequency sputtering process and a wet cleaning process, a metal silicide film having a uniform phase may be stably formed.

Abstract: A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the processing chamber is etched with the plasma of a non-hydrogenous second gas. Thus, the etching selectivity can be improved and the particles are prevented from depositing and/or forming on the substrate.