Abstract: A conductive pattern having a surface including silicon is formed on a substrate of a semiconductor device and a conduction region having a surface including silicon is formed in the substrate. A radio frequency etching process is performed ex-situ to remove impurities from a resultant structure and to improve surface characteristics of the conduction region. Residues generated during the radio frequency etching process are removed from the conductive pattern and the conduction region by a cleaning process. A metal film is formed on the conductive pattern and the conduction region. A silicide film is formed on the conductive pattern and the conduction region by reacting metal of the metal film and silicon in the conductive pattern and the conduction region. With a radio frequency sputtering process and a wet cleaning process, a metal silicide film having a uniform phase may be stably formed.

Abstract: A method of fabricating a semiconductor device employing a multi-layer metal interconnect structure that has a copper (Cu) interconnection layer. Low-temperature plasma processing is first performed on the surface of the Cu interconnection layer, an insulation layer is deposited on the plasma-processed Cu interconnection layer, and the resultant structure is thermally treated.

Abstract: A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole.

Abstract: A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole.

Abstract: A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole.