Abstract: The cathode active material according to embodiments of the present invention includes a lithium composite oxide particle having a form of secondary particle in which a plurality of primary particle are aggregated, wherein the primary particles respectively include a lithium conduction pathway through which lithium ions are diffused. Wherein the primary particles include a first particle, and the first particle has an angle of 45° to 90° formed by a direction from a center of the first particle to a center of the lithium composite oxide particle and a direction of the lithium conduction pathway included in the first particle, wherein a ratio of the number of the first particles among the primary particles located on a surface of the lithium composite oxide particle is 20% or more.

Abstract: An electronic device for controlling a speaker and an operating method thereof are provided. The electronic device includes an audio output apparatus, and a processor configured to, according to a type of a first sound source to be output through the audio output apparatus, control an output of the audio output apparatus to output a first sound corresponding to the first sound source so as to be focused on a first area.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.

Abstract: A method and system for operating an electronic apparatus includes: implementing, by a first processor, a main process of the electronic apparatus; receiving a user input for controlling an operation of at least one element (e.g., camera, memory, microphone, or the like) configured to perform at least one function; and in response to a received user input, controlling power of the at least one element by using at least a second processor separate from the first processor.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.

Abstract: An electronic device for controlling a speaker and an operating method thereof are provided. The electronic device includes an audio output apparatus, and a processor configured to, according to a type of a first sound source to be output through the audio output apparatus, control an output of the audio output apparatus to output a first sound corresponding to the first sound source so as to be focused on a first area.

Abstract: A method and system for operating an electronic apparatus includes: implementing, by a first processor, a main process of the electronic apparatus; receiving a user input for controlling an operation of at least one element (e.g., camera, memory, microphone, or the like) configured to perform at least one function; and in response to a received user input, controlling power of the at least one element by using at least a second processor separate from the first processor.

Abstract: A method of analyzing a program code of an electronic device includes configuring a tree by using a key string included in the program code and; in response to a command to find a specific key being received, performing a predetermined order traversal of the tree by using a string included in the specific key; in response to a node which matches a last string included in the specific key having a leaf node as a result of the predetermined order traversal, returning a value of the leaf node; and analyzing the program code by using the return value.

Abstract: An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.

Abstract: A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

Abstract: A shielding unit for a plating apparatus may include a shielding plate, a controlling plate and a rotary actuator. The shielding plate may have a plurality of holes configured to permit a passage of an electrolyte therethrough. The controlling plate may make contact with the shielding plate. The controlling plate may have a plurality of controlling holes for controlling an opening ratio of the plurality of holes of the shielding plate. The rotary actuator may rotate the controlling plate to control the opening ratio of the plurality of holes shielding plate.

Abstract: A semiconductor device includes a substrate having a die region and a scribe region surrounding the die region, a plurality of via structures penetrating through the substrate in the die region, a portion of the via structure being exposed over a surface of the substrate, and a protection layer pattern structure provided on the surface of the substrate surrounding a sidewall of the exposed portion of the via structure and having a protruding portion covering at least a portion of the scribe region adjacent to the via structure.

Abstract: Provided is a semiconductor device. The semiconductor device includes a passivation layer defining a metal pattern on a first surface of a substrate, an inter-layer insulating layer disposed on a second surface of the substrate, and a piezoelectric pattern formed between the metal pattern and the passivation layer on the first surface of the substrate. A through-silicon-via and/or a pad can be directly bonded to another through-silicon-via and/or another pad by applying pressure only, and without performing a heat process.

Abstract: Disclosed is a method of manufacturing a semiconductor device. A preliminary wafer-carrier assembly is formed in such a way that a wafer structure having a plurality of via structures is adhered to a light-penetrating carrier by a photodegradable adhesive. A wafer-carrier assembly having an optical shielding layer for inhibiting or preventing a light penetration is formed such that the wafer structure, the carrier and the adhesive are covered with the optical shielding layer except for the backside of the wafer structure through which the via structures are exposed. An interconnector is formed on the backside of the wafer structure such that the via structures make contact with the interconnector, and the wafer structure and the carrier are separated from each other by irradiating a light to the wafer-carrier assembly. Accordingly, the adhesive is inhibited or prevented from being dissolved during a plasma process on the wafer-carrier assembly.

Abstract: An integrated circuit device includes a semiconductor structure, a through-silicon-via (TSV) structure that penetrates through the semiconductor structure and a connection terminal connected to the TSV structure. A metal capping layer includes a flat capping portion that covers the bottom surface of the connection terminal and a wedge-shaped capping portion that is integrally connected to the flat capping portion and that partially covers a side wall of the connection terminal. The metal capping layer may be formed by an electroplating process in which the connection terminal is in contact with a metal strike electroplating solution while a pulse-type current is applied.

Abstract: A method of analyzing a program code of an electronic device includes configuring a tree by using a key string included in the program code and; in response to a command to find a specific key being received, performing a predetermined order traversal of the tree by using a string included in the specific key; in response to a node which matches a last string included in the specific key having a leaf node as a result of the predetermined order traversal, returning a value of the leaf node; and analyzing the program code by using the return value.

Abstract: A method for generating a transport stream of a server is provided. The method for generating a transport stream of a server which sends broadcasting content to a client device comprises: scrambling broadcasting content by using a specific key; adding at least one content-encryption message which includes the specific key and a device key for obtaining the specific key from the at least one content-encryption message to the broadcasting content so as to generate a transport stream; and sending the generated transport stream to the client device.

Abstract: A semiconductor device includes a substrate including a first surface and a second surface opposite to each other, a through-via electrode extending through the substrate. The through-via electrode has an interconnection metal layer and a barrier metal layer surrounding a side surface of the interconnection metal layer. One end of the through-via electrode protrudes above the second surface. A spacer insulating layer may be provided on an outer sidewall of the through-via electrode. A through-via electrode pad is connected to the through-via electrode and extends on the spacer insulating layer substantially parallel to the second surface. A first silicon oxide layer and a silicon nitride layer are stacked on the second surface. A thickness of the first silicon oxide layer is greater than a thickness of the silicon nitride layer.

Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.