Abstract: A voltage calibration method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: reading first data from a first physical unit using a first read voltage level and reading second data from at least one second physical unit using a second read voltage level; obtaining count information reflecting a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit according to the first data and the second data; and calibrating the first read voltage level according to the count information.

Abstract: Devices, systems, and methods for measuring an analyte are disclosed. A device, system, or method can include a radiofrequency sensor comprising a radiofrequency transmitter and a radiofrequency receiver. A device, system, or method can be configured to transmit a radiofrequency signal from the transmitter to the receiver through a culture medium comprising the analyte. In some embodiments, a device, system, or method can include a controller configured to determine a concentration of the analyte based on a resultant signal produced at the receiver. A device, system, or method can comprise a radiofrequency sensor introducer. An introducer of a device, system, or method can comprise a first sensor sheath configured to receive a radiofrequency transmitter and a second sensor sheath configured to receive a radiofrequency receiver. In some implementations, an introducer of a device, system, or method can be configured to maintain a separation between the transmitter and receiver.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: detecting a status of a rewritable non-volatile memory module; and determining whether to perform a data refresh operation on the rewritable non-volatile memory module according to a first condition and a second condition. The first condition is related to a first physical unit in the rewritable non-volatile memory module. The second condition is related to a plurality of second physical units in the rewritable non-volatile memory module. The data refresh operation is configured to update data in the rewritable non-volatile memory module to reduce a bit error rate of the data.

Abstract: A decoding method, a memory storage device, and a memory control circuit unit are provided. The decoding method is described below. A read command sequence is transmitted, the read command sequence instructs to read a first physical unit, and the first physical unit belongs to a physical unit group. A first single-frame decoding is performed on a first data frame read from the first physical unit. First error evaluation information corresponding to the physical unit group is obtained in response to the first single-frame decoding being failed and a default condition not being satisfied. This default condition is used for triggering the multi-frame decoding on the physical unit group. A second single-frame decoding is performed on the first data frame according to the first error evaluation information.

Abstract: A data sequence prediction method includes calculating, based on historical data sequences of N objects, a similarity distance between every two objects of the N objects, to obtain a similarity distance set, where the similarity distance is used to represent a similarity degree of two objects, the historical data sequence includes a plurality of pieces of data arranged according to a preset rule, and N is a positive integer greater than 1, dividing the N objects into K prediction object classes based on the similarity distance set using a clustering algorithm, where K is a positive integer, and K?N, and predicting a future data sequence of an object included in at least one prediction object class of the K prediction object classes.

Abstract: The supporting module includes a supporting assembly including a fixed plate and a movable plate, and both sides of fixed plate are hinged with one movable plate; a synchronous assembly is fixed on the fixed plate, transmission assemblies are located at a bottom of the movable plate and a bottom of the fixed plate, a bottom surface of each movable plate is movably connected to a first end of one transmission assembly, and second ends of the transmission assemblies located at both sides of the fixed plate are movably connected to the synchronous assembly; when a first included angle is disposed between a supporting surface of one movable plate and a supporting surface of the fixed plate, a supporting surface of the other movable plate keeps the first included angle with the supporting surface of the fixed plate under an action of the transmission assembly and the synchronous assembly.

Abstract: A read voltage adjustment method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending a write command sequence instructing to program a plurality of first memory cells in a rewritable non-volatile memory module; sending a first read command sequence instructing to read the programmed first memory cells using a first read voltage level to obtain first count information; obtaining first compensation information corresponding to the first read voltage level, wherein the first compensation information reflects a deviation in evenly programming the first memory cells to a plurality of states; and adjusting the first read voltage level according to the first count information, the first compensation information, and default count information corresponding to the first read voltage level.

Abstract: A display apparatus including a folding bracket and a flexible display panel. The folding bracket includes a base and two folding mechanisms, and the two folding mechanisms are rotatably connected to the base respectively and are capable of being unfolded and folded relative to each other. The flexible display panel includes a support layer and a panel body that are separated from each other, and each of the support layer and the panel body is connected to the two folding mechanisms. Each of the two folding mechanisms is configured to drive the panel body and the support layer to move in staggered directions.

Abstract: A surgical robotic arm control system and a control method thereof are provided. The surgical robotic arm control system includes a surgical robotic arm, an image capturing unit, and a processor. The surgical robotic arm has multiple joint axes. The image capturing unit obtains a first image. The processor executes a spatial environment recognition module to generate a first environment information image, a first direction information image, and a first depth information image according to the first image. The processor executes a spatial environment image processing module to calculate path information according to the first environment information image, the first direction information image, and the first depth information image. The processor executes a robotic arm motion feedback module to operate the surgical robotic arm to move according to the path information.

Abstract: Provided is a rotary shaft mechanism including a curved base, a screen support plate, a curved slider, and a rotating block; the curved base includes a first centerline extending along X direction and two curved connecting portions symmetrically arranged around the first centerline; in the X direction, the screen support plates are on opposite sides of the curved base, each curved connecting portion is connected to the corresponding screen support plate through the curved slider and the rotating block; along the X direction, each curved connecting portion is divided into first and second curved guide grooves, the rotating block includes a curved connector connected to the first curved guide groove, and a sliding connector slidably connected to the screen support plate; the curved slider is rotatably connected into the second curved guide groove, and the curved slider is rotatably connected to the screen support plate through a pin-shape shaft.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to antenna structures and methods of manufacture. The structure includes an antenna cell comprising a single P-well isolated by a deep trench isolation structure and including at least one diffusion region.

Abstract: A voltage calibration method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: reading first data from a first physical unit using a first read voltage level and reading second data from at least one second physical unit using a second read voltage level; obtaining count information reflecting a total number of memory cells meeting a default condition in the first physical unit and the at least one second physical unit according to the first data and the second data; and calibrating the first read voltage level according to the count information.

Abstract: Provided is a hinge. The hinge includes: a support base and at least one set of flip assemblies. One set of flip assemblies include a first flip assembly and a second flip assembly that are symmetrically arranged with respect to the support base. The first flip assembly includes a first swing arm and a first flip plate. A first end of the first swing arm is flipably connected to the support base, and a second end of the first swing arm is flipably connected to a rear face of the first flip plate. The second flip assembly includes a second swing arm and a second flip plate. A first end of the second swing arm is flipably connected to the support base, and a second end of the second swing arm is flipably connected to a rear face of the second flip plate.

Abstract: The present disclosure discloses a display module and a display apparatus, which belong to the field of display technologies. The display module includes a display panel and a circuit board. The display panel can be bonded and connected to the circuit board after being bent twice respectively by the first bending part and the second bending part, so that a first connection part of the display panel and the circuit board are laminated at one side of the back surface of the display panel further away from a display surface.

Abstract: A read voltage adjustment method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending a write command sequence instructing to program a plurality of first memory cells in a rewritable non-volatile memory module; sending a first read command sequence instructing to read the programmed first memory cells using a first read voltage level to obtain first count information; obtaining first compensation information corresponding to the first read voltage level, wherein the first compensation information reflects a deviation in evenly programming the first memory cells to a plurality of states; and adjusting the first read voltage level according to the first count information, the first compensation information, and default count information corresponding to the first read voltage level.

Abstract: A method for obtaining an emission probability includes obtaining a plurality of measurement reports (MRs) of a terminal in a target region and an engineering parameter of at least one base station in the target region, obtaining, based on parameter information in each of the plurality of MRs and the engineering parameter of the at least one base station, a feature vector corresponding to each of the plurality of MRs, processing, using a regression model, location information in each of the plurality of MRs and the feature vector corresponding to each of the plurality of MRs, to obtain a single-point positioning model, calculating, based on the single-point positioning model, the location information in each of the plurality of MRs, and the feature vector corresponding to each of the plurality of MRs, an emission probability of the feature vector corresponding to each of the plurality of MRs.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a logic cell layout design for high density transistors and methods of manufacture. The structure includes a plurality of active gates in a high density transistor, and at least one dummy gate which is continuous and is adjacent to at least one active gate of the active gates in a multi-row cell of the high density transistor.

Abstract: The present disclosure relates to task solving methods. One example method includes obtaining importance of each first scheduling constraint in a plurality of first scheduling constraints in a first linear-programming task, where the importance indicates a degree of contribution of the first scheduling constraint to reducing a time for solving the first linear-programming task. The plurality of first scheduling constraints are sampled based on the importance to obtain a subset of the obtained plurality of first scheduling constraints, where the importance is used to determine sampling probability of the first scheduling constraints. A second linear-programming task is constructed based on the subset of the plurality of first scheduling constraints. The second linear-programming task is solved to obtain a first solving result. A first solving result is used as an initial value of the first linear-programming task, and an initialized first linear-programming task is solved.

Abstract: A multi-row standard cell and an integrated circuit (IC) structure using the standard cell are provided. The IC structure includes a plurality of cell rows extending in a first direction. At least two cell rows of the plurality of cell rows have different row heights. The IC structure includes a multi-row standard cell positioned in two or more cell rows having different row heights. At least one active region is shared by portions of the multi-row cell across the at least two cell rows. The IC structure may also include one or more asymmetric shared power rails disposed in an asymmetric manner across a row boundary between the at least two cell rows of different row heights. The multi-row standard cells and IC structures allow placement of multi-row cells for mixed track height arrangements in a manner not limited to multiples of row heights.

Abstract: A surgical robotic arm control system and a surgical robotic arm control method are provided. The surgical robotic arm control system includes a surgical robotic arm, a first image capturing unit, a second image capturing unit, and a processor. The first image capturing unit is used for obtaining a field image. The field image includes a first target image of a target object. The second image capturing unit is disposed at an end position of the surgical robotic arm and is used to obtain a second target image of the target object. The processor analyzes the field image to obtain robotic arm movement information, and controls the surgical robotic arm to move to approach the target object. The processor analyzes the target image to obtain robotic arm rotation information, and controls an angle and a posture of the surgical robotic arm.