Patents by Inventor Jianhua Yang

Jianhua Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory resistor having multi-layer electrodes
    Patent number: 8737113
    Abstract: Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.
    Type: Grant
    Filed: February 8, 2010
    Date of Patent: May 27, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Wei Wu, Gilberto Ribeiro
  • Field-programmable analog array with memristors
    Patent number: 8710865
    Abstract: A field-programmable analog array (FPAA) includes a digital signal routing network, an analog signal routing network, switch elements to interconnect the digital signal routing network with the analog signal routing network, and a configurable analog block (CAB) connected to the analog signal routing network and having a programmable resistor array. The switch elements are implemented via digital memristors, the programmable resistor array is implemented via analog memristors, and/or antifuses within one or more of the digital signal routing network and the analog signal routing network are implemented via digital memristors.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: April 29, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Muhammad Shakeel Qureshi, Gilberto Medeiros Ribeiro, R Stanley Williams
  • Memristive junction with intrinsic rectifier
    Patent number: 8710483
    Abstract: A memristive junction (400) can comprise a first electrode (102) and second electrode (104), with a memristive region (106) situated between them. The memristive region is configured to switch between two activation states via a switching voltage (118) applied between the electrodes. The activation state can be ascertained by application of a reading voltage between the first electrode and second electrode. The junction further comprises a rectifier region situated at an interface (420) between the first electrode and the memristive region, and comprising a layer (402) of temperature-responsive transition material that is substantially conductive at the switching voltage and substantially resistive at the reading voltage.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: April 29, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, John Paul Strachan, Matthew D. Pickett
  • Asymmetric switching rectifier
    Patent number: 8711594
    Abstract: An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device.
    Type: Grant
    Filed: August 18, 2011
    Date of Patent: April 29, 2014
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
  • HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
    Publication number: 20140112059
    Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
    Type: Application
    Filed: June 24, 2011
    Publication date: April 24, 2014
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • MEMRISTIVE DEVICES AND MEMRISTORS WITH RIBBON-LIKE JUNCTIONS AND METHODS FOR FABRICATING THE SAME
    Publication number: 20140097398
    Abstract: Memristive devices, memristors and methods for fabricating memristive devices are disclosed. In one aspect, a memristor includes a first electrode wire and a second electrode wire. The second electrode wire and the first electrode wire define an overlap area. The memristor includes an electrode extension in contact with the first electrode wire and disposed between the first and second electrode wires. At least one junction is disposed between the second electrode wire and the electrode extension. Each junction contacts a portion of the electrode extension and has a junction contact area with the second electrode wire, and the sum total junction contact area of the at least one junction is less than the overlap area.
    Type: Application
    Filed: October 29, 2010
    Publication date: April 10, 2014
    Inventors: Hans S. Cho, Jianhua Yang, Janice H. Nickel
  • LOW ENERGY MEMRISTORS WITH ENGINEERED SWITCHING CHANNEL MATERIALS
    Publication number: 20140091270
    Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.
    Type: Application
    Filed: September 28, 2012
    Publication date: April 3, 2014
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Shape memory dental retention systems
    Patent number: 8651864
    Abstract: Shape memory dental retention systems which facilitate the adjustment or removal of an oral appliance, e.g., a crown or bridge, from a reconfigurable abutment assembly are described. The adjustable abutment assembly may be secured to an anchoring implant bored into the bones within the mouth. The abutment assembly has a projecting abutment portion with one or more shape memory material sleeves or plates or elements extending along the abutment. Each of the sleeves has a length with at least one curved or arcuate portion. Energy may be applied to the elements such that the arcuate portion flattens to allow for the oral appliance to be placed thereupon while removal of the energy allows the elements to reconfigure into its curved configuration thereby locking the oral appliance to the abutment. Removal of the oral appliance may be effected by reapplication of energy to the elements.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: February 18, 2014
    Assignee: Rodo Medical, Inc.
    Inventors: Young Seo, Jianhua Yang, Victor Chechelski, Jong Gil Park
  • BIPOLAR RESISTIVE SWITCH HEAT MITIGATION
    Publication number: 20140029327
    Abstract: A heat mitigated bipolar resistive switch includes a BRS matrix sandwiched between first and second electrodes and a heat mitigator. The BRS matrix is to support bipolar switching of a conduction channel formed between the first and second electrodes through BRS matrix. The heat mitigator is to reduce heat in the BRS matrix generated during bipolar switching. The heat mitigator includes one or both of a parallel-connected NDR element to limit current flowing in the BRS matrix and a high thermal conductivity material to conduct the generated heat away from the BRS matrix above a predetermined elevated temperature.
    Type: Application
    Filed: July 24, 2012
    Publication date: January 30, 2014
    Inventors: John Paul Strachan, Gilberto Medeiros Ribeiro, Jianhua Yang, Wei Yi
  • MEMRISTOR CELL STRUCTURES FOR HIGH DENSITY ARRAYS
    Publication number: 20140027705
    Abstract: A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
    Type: Application
    Filed: July 27, 2012
    Publication date: January 30, 2014
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT
    Publication number: 20130334485
    Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
    Type: Application
    Filed: February 28, 2011
    Publication date: December 19, 2013
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • Apparatus for Replacing a Native Heart Valve and Method of Making the Same
    Publication number: 20130331931
    Abstract: An apparatus for replacement a native heart valve is herein provided. The apparatus includes a replacement heart valve, an expandable anchor, and a plurality of rivets. The expandable anchor comprises a woven braid structure that surrounds at least a portion of the replacement heart valve and has a plurality of braid intersections. At least some of the braid intersections have rivets extending therethrough.
    Type: Application
    Filed: June 6, 2013
    Publication date: December 12, 2013
    Inventors: Peter W. Gregg, Jianhua Yang, Jarad Waisblatt, Benjamin T. Sutton, Ali Salahieh
  • RECOMBINANT T CELL LIGANDS AND ANTIBODIES THAT BIND B CELLS FOR THE TREATMENT OF AUTOIMMUNE DISEASES
    Publication number: 20130309229
    Abstract: Methods are disclosed for treating or inhibiting an autoimmune disease in a subject. In some embodiments, the disclosed methods include administering to the subject a therapeutically effective amount of one or more Major Histocompatibility Complex (MHC) molecules including covalently linked first, second and third domains; wherein the first domain is an MHC class II ?1 domain and the second domain is an MHC class II ?1 domain, wherein the amino terminus of the ?1 domain is covalently linked to the carboxy terminus of the ?1 domain; or wherein the first domain is an MHC class I ?1 domain and the second domain is an MHC class I ?2 domain, wherein the amino terminus of the ?2 domain is covalently linked to the carboxy terminus of the ?1 domain; and wherein the third domain is covalently linked to the first domain and comprises an antigen associated with the autoimmune disorder.
    Type: Application
    Filed: January 26, 2012
    Publication date: November 21, 2013
    Applicants: THE UNITED STATES GOVERNMENT AS REPRESENTED BY THE DEPARTMENT OF VETERANS AFFAIRS, OREGON HEALTH & SCIENCE UNIVERSITY
    Inventors: Jianhua Yang, Jianya Huan, Arthur A. Vandenbark
  • Memristive switch device
    Patent number: 8586959
    Abstract: A memristive switch device can comprise a switch formed between a first electrode and a second electrode, where the switch includes a memristive layer and a select layer directly adjacent the memristive layer. The select layer blocks current to the memristive layer over a symmetric bipolar range of subthreshold voltages applied between the first and second electrodes.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: November 19, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Matthew D. Pickett, Jianhua Yang, Dmitri Strukov
  • Memory array with graded resistance lines
    Patent number: 8587985
    Abstract: A memory array with graded resistance lines includes a first set of lines intersecting a second set of lines. A line from one of the sets of lines includes a graded resistance along a length of the line.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: November 19, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, John Paul Strachan, Wei Wu, Janice H. Nickel
  • Memristive device
    Patent number: 8575585
    Abstract: A memristive device includes a first electrode, a second electrode crossing the first electrode at a non-zero angle, and an active region disposed between the first and second electrodes. The active region has a controlled defect profile throughout its thickness.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: November 5, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Qiangfei Xia, Alexandre M. Bratkovski
  • Resistive switches
    Patent number: 8570138
    Abstract: Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance with applied switching voltages. Resistive switches are characterized by ON state and OFF state resistance curves. Resistance ratios of ten times or more are exhibited. The state of a resistive switch is determined using sensing voltages lesser then the switching threshold.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: October 29, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Dmitri Borisovich Strukov, Shih-Yuan Wang
  • FLAT-PANEL DISPLAY INCLUDING MEMRISTIVE DEVICES
    Publication number: 20130271442
    Abstract: A flat-panel display system and method are disclosed. The system includes a display controller to generate image data. The system also includes a plurality of memristive pixel cells arranged in a plurality of rows and in a plurality of columns. Each of the plurality of memristive pixel cells includes a memristive device to control a respective pixel associated with the flat panel display based on the image data.
    Type: Application
    Filed: April 13, 2012
    Publication date: October 17, 2013
    Inventors: Wendi Li, Wei Yi, Wei Wu, Jianhua Yang
  • Memristive device
    Patent number: 8546785
    Abstract: A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: October 1, 2013
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Feng Miao, Wei Wu, Shih-Yuan Wang, R. Stanley Williams
  • DYNAMIC OPTICAL CROSSBAR ARRAY
    Publication number: 20130250420
    Abstract: A dynamic optical crossbar array includes a first set of parallel transparent electrode lines, a bottom set of parallel electrode lines that cross said transparent electrode lines, and an optically variable material disposed between said first set of transparent electrode lines and said bottom set of electrode lines.
    Type: Application
    Filed: January 7, 2011
    Publication date: September 26, 2013
    Inventors: Jianhua Yang, Alexandre M. Bratkovski, David A. Fattal, Minxian Max Zhang