Patents by Inventor Jianhua Yang

Jianhua Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Printheads having memories formed thereon
    Patent number: 9701115
    Abstract: Printheads having memories formed thereon are disclosed. An example apparatus includes a printhead body comprising a first metal layer. The example apparatus also include a memory formed on the print-head body. The memory includes the first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers.
    Type: Grant
    Filed: October 31, 2013
    Date of Patent: July 11, 2017
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Jianhua Yang, Ning Ge, Zhiyong Li
  • MEMRISTIVE DOT PRODUCT ENGINE FOR VECTOR PROCESSING
    Publication number: 20170178725
    Abstract: A memristive dot-product system for vector processing is described. The memristive dot-product system includes a crossbar array having a number of memory elements. Each memory element includes a memristor. Each memory element includes a transistor. The system also includes a vector input register. The system also includes a vector output register.
    Type: Application
    Filed: October 29, 2014
    Publication date: June 22, 2017
    Inventors: Jianhua Yang, Miao Hu, John Paul Strachan, Ning Ge
  • PROTECTIVE ELEMENTS FOR NON-VOLATILE MEMORY CELLS IN CROSSBAR ARRAYS
    Publication number: 20170141160
    Abstract: Protective elements are provided for non-volatile memory cells in crossbar arrays in which each memristor is situated at a crosspoint of the array. Each memristor is provided with a protective element. The protective element includes a layer of a first oxide that upon heating converts to a second oxide having a higher resistivity than the first oxide.
    Type: Application
    Filed: June 26, 2014
    Publication date: May 18, 2017
    Inventors: Minxian Max ZHANG, Jianhua YANG, R. Stanley WILLIAMS
  • MULATIPHASE SELECTORS
    Publication number: 20170125674
    Abstract: A multiphase selector includes a first electrode, a switching layer coupled to the first electrode, a capping layer coupled to the switching layer, and a second electrode coupled to the capping layer. The switching layer may include a matrix having a first, relatively insulating phase of a transition metal oxide; a second, relatively conducting phase of the transition metal oxide dispersed in the matrix; and a catalyst, located within the matrix, to interact with the first phase of the transition metal oxide to selectively form and position the second phase of the transition metal oxide within the matrix.
    Type: Application
    Filed: July 29, 2014
    Publication date: May 4, 2017
    Inventors: Jianhua Yang, Yoocharn Jeon, Hans S. Cho
  • 1-SELECTOR N-RESISTOR MEMRISTIVE DEVICES
    Publication number: 20170110515
    Abstract: A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.
    Type: Application
    Filed: April 10, 2014
    Publication date: April 20, 2017
    Inventors: Jianhua Yang, Gary Gibson, Zhiyong Li
  • SELECTORS WITH OXIDE-BASED LAYERS
    Publication number: 20170077179
    Abstract: A selector with an oxide-based layer includes an oxide-based layer that has a first region and a second region. The first region contains a metal oxide in a first oxidation state, and the second region contains the metal oxide in a second oxidation state. The first region also forms a part of each of two opposite faces of the oxide-based layer.
    Type: Application
    Filed: May 5, 2014
    Publication date: March 16, 2017
    Inventors: Jianhua Yang, Ning Ge, Zhiyong Li
  • REGULATING MEMRISTOR SWITCHING PULSES
    Publication number: 20170062048
    Abstract: A device for regulating memristor switching pulses is described. The device includes a voltage source to supply a voltage to a memristor. The device also includes a voltage detector to detect a memristor voltage. The memristor voltage is based on an initial resistance state of the memristor and the voltage supplied by the voltage source. The device also includes a comparator to compare the memristor voltage with a target voltage value for the memristor. The device also includes a feedback loop to indicate to a control switch when the memristor voltage is at least equal to the target voltage value. The device also includes a control switch to cut off the memristor from the voltage source when the memristor voltage is at least equal to the target voltage value.
    Type: Application
    Filed: April 30, 2014
    Publication date: March 2, 2017
    Inventors: Ning Ge, Jianhua Yang, Adam L. Ghozeil, Brent Buchanan
  • RESISTIVE MEMORY DEVICES WITH A MULTI-COMPONENT ELECTRODE
    Publication number: 20170053968
    Abstract: A resistive memory device includes a conductor and a resistive memory stack in contact with the conductor. The resistive memory stack includes a multi-component electrode and a switching region. The multi-component electrode includes a base electrode having a surface, and an inert material electrode on the base electrode surface in a form of i) a thin layer, or ii) discontinuous nano-islands. A switching region is in contact with the conductor and with the inert material electrode when the inert material electrode is in the form of the thin layer; or the switching region is in contact with the conductor, with the inert material electrode, and with an oxidized portion of the base electrode when the inert material electrode is in the form of the discontinuous nano-islands.
    Type: Application
    Filed: April 30, 2014
    Publication date: February 23, 2017
    Inventors: Xia Sheng, Yoocharn Jeon, Jianhua Yang, Hans S. Cho, Richard H. Henze
  • NON-VOLATILE MEMORY ELEMENT WITH THERMAL-ASSISTED SWITCHING CONTROL
    Publication number: 20170032837
    Abstract: A non-volatile memory element with thermal-assisted switching control is disclosed. The non-volatile memory element is disposed on a thermal inkjet resistor. Methods for manufacturing the combination and methods of using the combination are also disclosed.
    Type: Application
    Filed: December 18, 2013
    Publication date: February 2, 2017
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Ning Ge, Jianhua Yang, Zhiyong Li
  • Negative differential resistance device
    Patent number: 9558869
    Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: January 31, 2017
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • NONLINEAR DIELECTRIC STACK CIRCUIT ELEMENT
    Publication number: 20160351802
    Abstract: A nonlinear dielectric stack circuit element includes a first layer of material having a first dielectric constant; a second layer of material having a second dielectric constant; and a third layer of material sandwiched between the first layer of material and the second layer of material and having a third dielectric constant. The third dielectric constant has a value less than the first dielectric constant and the second dielectric constant.
    Type: Application
    Filed: January 30, 2014
    Publication date: December 1, 2016
    Inventors: Warren Jackson, Gary Gibson, R. Stanley Williams, Jianhua Yang
  • Nanochannel array of nanowires for resistive memory devices
    Patent number: 9508928
    Abstract: A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.
    Type: Grant
    Filed: May 15, 2013
    Date of Patent: November 29, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Shih-Yuan Wang, Jianhua Yang
  • APPARATUS HAVING FIRST AND SECOND SWITCHING MATERIALS
    Publication number: 20160322424
    Abstract: In an example, an apparatus includes an electrically conductive component having a first side and a second side, a first switching material formed on the first side of the electrically conductive component, and a second switching material formed on the second side of the electrically conductive component. The second switching material may include a different material than the first switching material and resistance states of each of the first switching material and the second switching material are to be modified through application of electric fields through the first switching material and the second switching material. The apparatus may also include an electrode in contact with one of the first switching material and the second switching material.
    Type: Application
    Filed: April 30, 2015
    Publication date: November 3, 2016
    Inventors: Ning GE, Jianhua YANG, Stanley WILLIAMS, Kyung Min KIM
  • V-SHAPE RESISTIVE MEMORY ELEMENT
    Publication number: 20160315256
    Abstract: A resistive memory element is provided, having a bottom electrode, a top electrode, and an active region sandwiched therebetween. The resistance memory element has a V-shape. Methods of manufacturing the V-shape resistive memory element and crossbar structures employing the V-shape resistive memory element are also provided.
    Type: Application
    Filed: December 13, 2013
    Publication date: October 27, 2016
    Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
    Inventors: Ning Ge, Jianhua Yang, Chaw Sing Ho
  • High-reliability high-speed memristor
    Patent number: 9478738
    Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: October 25, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Memristors having at least one junction
    Patent number: 9466793
    Abstract: Memristive devices, memristors and methods for fabricating memristive devices are disclosed. In one aspect, a memristor includes a first electrode wire and a second electrode wire. The second electrode wire and the first electrode wire define an overlap area. The memristor includes an electrode extension in contact with the first electrode wire and disposed between the first and second electrode wires. At least one junction is disposed between the second electrode wire and the electrode extension. Each junction contacts a portion of the electrode extension and has a junction contact area with the second electrode wire, and the sum total junction contact area of the at least one junction is less than the overlap area.
    Type: Grant
    Filed: October 29, 2010
    Date of Patent: October 11, 2016
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Hans S Cho, Jianhua Yang, Janice H Nickel
  • PRINTHEADS HAVING MEMORIES FORMED THEREON
    Publication number: 20160271947
    Abstract: Printheads having memories formed thereon are disclosed. An example apparatus includes a printhead body comprising a first metal layer. The example apparatus also include a memory formed on the print-head body. The memory includes the first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers.
    Type: Application
    Filed: October 31, 2013
    Publication date: September 22, 2016
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Jianhua Yang, Ning Ge, Zhiyong Li
  • NONLINEAR MEMRISTOR DEVICES WITH THREE-LAYER SELECTORS
    Publication number: 20160254448
    Abstract: A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN: XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.
    Type: Application
    Filed: November 12, 2013
    Publication date: September 1, 2016
    Inventors: Byungjoon Choi, Jianhua Yang, R. Stanley Williams, Gary Gibson, Warren Jackson
  • SWITCHING RESISTANCE MEMORY DEVICES WITH INTERFACIAL CHANNELS
    Publication number: 20160225823
    Abstract: A switching resistance memory device with an interfacial channel includes a stack made of a layer of a first material and a layer of a second material. The layers form an interface, with the interface comprising the interfacial channel along which charged species can travel. A first electrode contacts a first edge of the stack, and a second electrode contacts a second edge of the stack.
    Type: Application
    Filed: September 16, 2013
    Publication date: August 4, 2016
    Inventors: Shih-Yuan Wang, Jianhua Yang, R. Stanley Williams
  • Memristor Structures
    Publication number: 20160218285
    Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.
    Type: Application
    Filed: September 5, 2013
    Publication date: July 28, 2016
    Inventors: Shih-Yuan Wang, Jianhua Yang, Minxian Max Zhang, Alexandre M. Bratkovski, R. Stanley Williams