Patents by Inventor Jianhua Yang

Jianhua Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160225823
    Abstract: A switching resistance memory device with an interfacial channel includes a stack made of a layer of a first material and a layer of a second material. The layers form an interface, with the interface comprising the interfacial channel along which charged species can travel. A first electrode contacts a first edge of the stack, and a second electrode contacts a second edge of the stack.
    Type: Application
    Filed: September 16, 2013
    Publication date: August 4, 2016
    Inventors: Shih-Yuan Wang, Jianhua Yang, R. Stanley Williams
  • Publication number: 20160218285
    Abstract: A memristor structure may be provided that includes a first electrode, a second electrode, and a buffer layer disposed on the first electrode. The memristor structure may include a switching layer interposed between the second electrode and the buffer layer to form, when a voltage is applied, a filament or path that extends from the second electrode to the buffer layer and to form a Schottky-like contact or a heterojunction between the filament and the buffer layer.
    Type: Application
    Filed: September 5, 2013
    Publication date: July 28, 2016
    Inventors: Shih-Yuan Wang, Jianhua Yang, Minxian Max Zhang, Alexandre M. Bratkovski, R. Stanley Williams
  • Patent number: 9331278
    Abstract: Forming memristors on imaging devices can include forming a printhead body comprising a first conductive material, forming a memory on the printhead body by performing an oxidation process to form a switching oxide material on the first conductive material, and forming a second conductive material on the switching oxide material.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: May 3, 2016
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Ning Ge, Zhiyong Li, Minxian Max Zhang
  • Patent number: 9293200
    Abstract: A multilayer crossbar memory array includes a number of layers. Each layer includes a top set of parallel lines, a bottom set of parallel lines intersecting the top set of parallel lines, and memory elements disposed at intersections between the top set of parallel lines and the bottom set of parallel lines. A top set of parallel lines from one of the layers is a bottom set of parallel lines for an adjacent one of the layers.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: March 22, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Janice H. Nickel, Gilberto Medeiros Ribeiro, Jianhua Yang
  • Patent number: 9276204
    Abstract: A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: March 1, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20160056377
    Abstract: A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.
    Type: Application
    Filed: May 15, 2013
    Publication date: February 25, 2016
    Inventors: Shih-Yuan Wang, Jianhua Yang
  • Publication number: 20160043312
    Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.
    Type: Application
    Filed: March 13, 2013
    Publication date: February 11, 2016
    Inventors: Jianhua Yang, Minxian Max Zhang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Patent number: 9257645
    Abstract: A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: February 9, 2016
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Minxian Max Zhang, Feng Miao
  • Publication number: 20160028005
    Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
    Type: Application
    Filed: September 30, 2015
    Publication date: January 28, 2016
    Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams
  • Publication number: 20160013403
    Abstract: Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.
    Type: Application
    Filed: September 23, 2015
    Publication date: January 14, 2016
    Inventors: Alexandre M. Bratkovski, Jianhua Yang, Shih-Yuan Wang, Michael Josef Stuke
  • Publication number: 20150380643
    Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
    Type: Application
    Filed: September 4, 2015
    Publication date: December 31, 2015
    Inventors: Feng Miao, Jianhua Yang, John Paul Strachan, Wei Yi, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Publication number: 20150380133
    Abstract: Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes.
    Type: Application
    Filed: September 4, 2015
    Publication date: December 31, 2015
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • Publication number: 20150380464
    Abstract: Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
    Type: Application
    Filed: September 4, 2015
    Publication date: December 31, 2015
    Inventors: Matthew D. Pickett, Jianhua Yang, Gilberto Medeiros Ribeiro
  • Patent number: 9224821
    Abstract: In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: December 29, 2015
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Minxian Max Zhang, Jianhua Yang, Gilberto Medeiros Ribeiro, R. Stanley Williams
  • Patent number: 9224949
    Abstract: Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: December 29, 2015
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Jianhua Yang, Minxian Max Zhang, R. Stanley Williams
  • Publication number: 20150335423
    Abstract: An apparatus for replacement a native heart valve is herein provided. The apparatus includes a replacement heart valve, an expandable anchor, and a plurality of rivets. The expandable anchor comprises a woven braid structure that surrounds at least a portion of the replacement heart valve and has a plurality of braid intersections. At least some of the braid intersections have rivets extending therethrough.
    Type: Application
    Filed: August 6, 2015
    Publication date: November 26, 2015
    Applicant: BOSTON SCIENTIFIC SCIMED, INC.
    Inventors: Peter W. Gregg, Jianhua Yang, Jarad Waisblatt, Benjamin T. Sutton, Ali Salahieh
  • Patent number: 9196354
    Abstract: Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
    Type: Grant
    Filed: February 9, 2010
    Date of Patent: November 24, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: John Paul Strachan, Julien Borghetti, Matthew D. Pickett, Gilberto Ribeiro, Jianhua Yang
  • Patent number: 9184382
    Abstract: Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: November 10, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Matthew D. Pickett, Jianhua Yang, Gilberto Medeiros Ribeiro
  • Patent number: 9184213
    Abstract: A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: November 10, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Jianhua Yang, Dmitri Strukov, Wei Wu
  • Patent number: 9178153
    Abstract: A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: November 3, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Minxian Max Zhang, Jianhua Yang, R. Stanley Williams