Abstract: In a method of manufacturing a semiconductor device including a Fin FET, a fin structure, which has an upper fin structure made of SiGe and a bottom fin structure made of a different material than the upper fin structure, is formed, a cover layer is formed over the fin structure, a thermal operation is performed on the fin structure covered by the cover layer, and a source/drain epitaxial layer is formed in a source/drain region of the upper fin structure. The thermal operation changes a germanium distribution in the upper fin structure.

Abstract: A multi-user virtual machine (VM) system is disclosed herein. Upon receiving a user login, first persistent storage and a first network interface card (NIC) are attached to a VM, where the VM operates as a personal computing device of a first user. Upon receiving a logout request for the user, the first persistent storage and the first NIC are detached from the VM. Thereafter, a second login is received, and second persistent storage and a second NIC are attached to the VM, where the VM operates as a personal computing device of a second user.

Abstract: An auxiliary evaluation system and method are provided here. The auxiliary evaluation system is electrically connected to a detection instrument. The detection instrument examines a target and generates a real-time image. The auxiliary evaluation system includes a computing device and a display device. The computing device is signally connected to the detection instrument, and includes a segmentation model, a depth prediction model, and a size prediction model. The computing device receives the real-time image, to mark a selection box for an abnormal feature on the real-time image. The segmentation model generates a bounding box and position information corresponding to the abnormal feature through calculation according to the real-time image and the selection box. The depth prediction model estimates a depth from the abnormal feature. The display device is electrically connected to the computing device to display the real-time image, the bounding box, and the size.

Abstract: Embodiments of the present disclosure provide a protective device for a submarine pipeline, comprising an internal pipeline, a protective casing, and a support explosion-proof assembly; wherein the protective casing is disposed outside the internal pipeline, and a cavity body is disposed between the protective casing and the internal pipeline; the support explosion-proof assembly is disposed in the cavity body; the support explosion-proof assembly includes a plurality of support columns, the support columns are disposed in the cavity body, and one end of the support columns away from the protective casing supported on the internal pipeline, the plurality of the support columns disposed at intervals in a circumferential direction along the internal pipeline, and an explosion-proof baffle with elastic deformation capability is disposed between two adjacent support columns.

Abstract: Provided in the present disclosure are anti-P-cadherin antibody-drug conjugates (ADCs) and uses thereof, methods of producing the ADCs as well as methods for validating their functions in vitro and in vivo.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. The epitaxial region can include a first semiconductor layer and an n-type second semiconductor layer formed over the first semiconductor layer. A lattice constant of the first semiconductor layer can be greater than that of the second semiconductor layer.

Abstract: Systems and methods for providing improved recommendations are disclosed. In some embodiments, the systems and methods may be used for vehicle recommendations. The system may include a server system configured to receive user historical vehicle preferences, user vehicle preferences, generate weighted feature data sets, and apply a similarity model to the generated weighted feature data set in order to determine a vehicle recommendation data set. A visual representation of the vehicle recommendation data set may then be provided to an interface associated with a user.

Abstract: A dense thick alloy coating with no layered organizational structure and a preparation method thereof are provided. The preparation method includes the following steps: step 1, placing a substrate in a plasma spraying apparatus, controlling a vacuum degree of the plasma spraying apparatus to be 0.2 mbar-0.5 mbar, controlling a length of a plasma flame of the plasma spraying apparatus to be 1000 mm-1200 mm, and controlling a diameter of the plasma flame to be 200 mm-300 mm; step 2, preheating, by using a plasma spray gun, the substrate to a temperature of 700° C.-1000° C. to obtain a preheated substrate; step 3, plasma spraying an alloy powder on the preheated substrate under a specific plasma spraying condition to obtain a sprayed substrate; and step 4, cooling the sprayed substrate after the plasma spraying, to thereby obtain the dense thick alloy coating without layered organizational structure.

Abstract: Prostamide-containing biodegradable intraocular implants, prostamide compounds, prostamide-containing pharmaceutical compositions, and methods for making and using such implants and compositions for the immediate and sustained reduction of intraocular pressure and treatment of glaucoma in an eye of a patient are described.

Abstract: Described herein are cell-based high-throughput screening (HTS) assays for the identification of activators of ?-secretase.

Abstract: A composite solution for enhancing induced disease resistance of lentinan (LNT) to a plant, a preparation method of the composite solution, and a method for enhancing induced disease resistance of LNT to a plant are provided. The composite solution for enhancing induced disease resistance of LNT to a plant includes: an LNT-containing solution and an SPc-containing solution, where SPc is a dendritic macromolecule functionalized by an amino functional group, and has a structural formula shown in formula I, where n=1 to 100. An LNT/SPc complex is produced in the composite solution. SPc spontaneously combines with LNT through hydrogen bonding, such that an agglomerate structure formed by LNT in an aqueous solution is broken and reduced to a nano-scale particle size, and a spherical particle is produced, which can significantly reduce a contact angle of the LNT aqueous solution, and promote the distribution and diffusion of LNT.

Abstract: The invention provides a method for cargo sorting, configured to control an end effector with a package placement platform to sort the cargo, and the method includes: moving the package placement platform to a package obtaining position and obtaining the cargo to be sorted that enters into the package placement platform; moving the package placement platform to a package storage location; and exerting a first force to push the cargo into a package storage unit. With the help of the package placement platform, the method of the invention can receive the packages of different types or different sizes or different material so as to sort and transport all kinds of packages.

Abstract: In a method of manufacturing a semiconductor device including a Fin FET, a fin structure, which has an upper fin structure made of SiGe and a bottom fin structure made of a different material than the upper fin structure, is formed, a cover layer is formed over the fin structure, a thermal operation is performed on the fin structure covered by the cover layer, and a source/drain epitaxial layer is formed in a source/drain region of the upper fin structure. The thermal operation changes a germanium distribution in the upper fin structure.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a bottom part and an upper part on the bottom part is formed over a substrate. The bottom part is trimmed so that a width of an uppermost portion of the bottom part is smaller than a width of the upper part. Bottom end corners of the upper part are trimmed to reduce a width of the upper part at a bottom of the upper part. An isolation insulating layer is formed so that the upper part protrudes from the isolation insulating layer. A dummy gate structure is formed. A source/drain structure is formed. An interlayer dielectric layer is formed over the dummy gate structure and the source/drain structure. The dummy gate structure is replaced with a metal gate structure.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. The epitaxial region can include a first semiconductor layer and an n-type second semiconductor layer formed over the first semiconductor layer. A lattice constant of the first semiconductor layer can be greater than that of the second semiconductor layer.

Abstract: In a method of manufacturing a semiconductor device, a fin structure having a bottom part and an upper part on the bottom part is formed over a substrate. The bottom part is trimmed so that a width of an uppermost portion of the bottom part is smaller than a width of the upper part. Bottom end corners of the upper part are trimmed to reduce a width of the upper part at a bottom of the upper part. An isolation insulating layer is formed so that the upper part protrudes from the isolation insulating layer. A dummy gate structure is formed. A source/drain structure is formed. An interlayer dielectric layer is formed over the dummy gate structure and the source/drain structure. The dummy gate structure is replaced with a metal gate structure.

Abstract: Systems and methods for providing improved recommendations are disclosed. In some embodiments, the systems and methods may be used for vehicle recommendations. The system may include a server system configured to receive user historical vehicle preferences, user vehicle preferences, generate weighted feature data sets, and apply a similarity model to the generated weighted feature data set in order to determine a vehicle recommendation data set. A visual representation of the vehicle recommendation data set may then be provided to an interface associated with a user.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure, a conductor layer over and in contact with the layer of dielectric material and above the S/D contact structure, and an interconnect structure over and in contact with the conductor layer.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of work function metal layers and an oxygen absorbing layer over a channel region of the semiconductor device, including forming a first work function metal layer over the channel region, forming an oxygen absorbing layer over the first work function metal layer, forming a second work function metal layer over the oxygen absorbing layer. A gate electrode metal layer is formed over the plurality of work function metal layers. The work function metal layers, oxygen absorbing layer, and gate electrode metal layer are made of different materials.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, a source/drain (S/D) contact structure adjacent to the gate structure, a layer of dielectric material over the S/D contact structure, a conductor layer over and in contact with the layer of dielectric material and above the S/D contact structure, and an interconnect structure over and in contact with the conductor layer.