Abstract: Embodiments disclosed herein are directed to fixed compositions comprising brimonidine and timolol for lowering intraocular pressure and treating glaucoma.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. The epitaxial region can include a first semiconductor layer and an n-type second semiconductor layer formed over the first semiconductor layer. A lattice constant of the first semiconductor layer can be greater than that of the second semiconductor layer.

Abstract: GAAFET threshold voltages are tuned by introducing dopants into a channel region. In a GAAFET that has a stacked channel structure, dopants can be introduced into multiple channels by first doping nano-structured layers adjacent to the channels. Then, by an anneal operation, dopants can be driven, from surfaces of the doped layers into the channels, to achieve a graduated dopant concentration profile. Following the anneal operation and after the dopants are diffused into the channels, depleted doped layers can be replaced with a gate structure to provide radial control of current in the surface-doped channels.

Abstract: Prostamide-containing biodegradable intraocular implants, prostamide compounds, prostamide-containing pharmaceutical compositions, and methods for making and using such implants and compositions for the immediate and sustained reduction of intraocular pressure and treatment of glaucoma in an eye of a patient are described.

Abstract: The present disclosure describes a semiconductor device with modulated gate structures and a method for forming the same. The method includes forming a fin structure, depositing a polysilicon layer over the fin structure, and forming a photoresist mask layer on the polysilicon layer. The method further includes etching, with a first etching condition, the polysilicon layer not covered by the photoresist mask layer and above a top surface of the fin structure. The method further includes etching, with a second etching condition, the polysilicon layer not covered by the photoresist mask layer and below the top surface of the fin structure, where the etched polysilicon layer below the top surface of the fin structure is narrower than the etched polysilicon layer above the top surface of the fin structure. The method further includes removing the etched polysilicon layer to form a space and forming a gate structure in the space.

Abstract: The present disclosure describes a semiconductor device with counter-doped nanostructures and a method for forming the semiconductor device. The method includes forming a fin structure on a substrate, the fin structure including one or more first-type nanostructures and one or more second-type nanostructures. The method further includes forming a polysilicon structure over the fin structure and forming a source/drain (S/D) region on a portion of the fin structure and adjacent the polysilicon structure, the S/D region including a first dopant. The method further includes doping the one or more second-type nanostructures with a second dopant via a space released by the polysilicon structure and the one or more first-type nanostructures, where the second dopant is opposite to the first dopant. The method further includes replacing portions of the one or more doped second-type nanostructures with additional second-type nanostructures.

Abstract: The present disclosure describes a semiconductor device and methods for forming the same. The semiconductor device includes nanostructures on a substrate and a source/drain region in contact with the nanostructures. The semiconductor device also includes a gate structure that includes first and second portions. The first portion is formed between each nanostructure of nanostructures. The second portion is formed under the bottom-most nanostructure of the plurality of nanostructures and extends under a top surface of the substrate.

Abstract: The present disclosure describes semiconductor devices and methods for forming the same. A semiconductor device includes nanostructures over a substrate and a source/drain region in contact with the nanostructures. The source/drain region is doped with a first-type dopant. The semiconductor device also includes a counter-doped structure in contact with the substrate and the source/drain region. The counter-doped structure is doped with a second-type dopant opposite to the first-type dopant.

Abstract: Provided herein are poly(ether ester) multi-block copolymers (PEE-MBCP). Also provided herein are injectable delivery systems or pharmaceutical compositions, comprising a PEE-MBCP provided herein, either alone or in combination with a binding protein, such as abicipar. Also provided herein are methods of using these injectable delivery systems or pharmaceutical compositions provided herein for the treatment of ocular disorders.

Abstract: The present disclosure describes a semiconductor device having a buried gate structure. The semiconductor device includes a substrate and a fin structure on the substrate. The fin structure includes a top portion and a bottom portion. The semiconductor device further includes a gate structure on the bottom portion of the fin structure. Multiple semiconductor layers in the top portion of the fin structure are disposed on the gate structure. The semiconductor device further includes a source/drain structure above the gate structure and in contact with the multiple semiconductor layers.

Abstract: A power conversion system includes one or more power conversion devices coupled to a grid connection. Each of the power conversion devices includes a power converter for converting a first multiphase current provided by the grid connection into a second current; a grid side filter coupled between the grid connection and an input of the power converter; a load side filter coupled to an output of the power converter; neutral points of the grid side filter and the load side filter connected together to form a first node; wherein the first node is not directly grounded.

Abstract: Disclosed embodiments provide systems and methods related to updating creatives generation models. The system may include at least one memory unit for storing instructions and at least one processor configured to execute the instructions to perform operations.

Abstract: A system may include an aggregate model comprising a plurality of modules, a monitoring dashboard in communication with the aggregate model, and a search-marketing campaign manager in communication with the aggregate model, the monitoring dashboard, and a search engine entity. Additionally, the system may include a bidding interface in communication with the aggregate model and a search engine entity and/or a monitoring dashboard configured to generate model adjustment data. The search-marketing campaign manager may be configured to determine trend data, measured marketing indicators, or both, from one or more of marketing data or historical data.

Abstract: Embodiments of the present disclosure relate systems and methods for detecting cognitive decline of a subject using passively obtained data from at least one mobile device. In an exemplary embodiment, a computer-implemented method comprises receiving passively obtained data from at least one mobile device. The method further comprises generating digital biomarker data from the passively obtained data. The method further comprises analyzing the digital biomarker data to determine whether the subject is exhibiting signs of cognitive decline.

Abstract: Techniques are disclosed relating to a graphical user interface (GUI) that is operable to depict data lineage information in levels. In some embodiments, data lineage information may specify a directed graph that is indicative of a data lineage associated with a plurality of data elements. For example, in the data lineage information, the plurality of data elements may be represented as a corresponding plurality of nodes and, in the directed graph, the plurality of nodes may be connected by edges in a manner that is indicative of the data lineage relationships between the plurality of data elements. In various embodiments, the disclosed techniques may generate a data lineage GUI that, for a selected data element of the plurality of elements, is usable to navigate different levels of the data lineage in an upstream and downstream direction relative to a particular level of the selected data element.

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over a first portion of the fin structure, and an epitaxial region formed in a second portion of the fin structure. The epitaxial region can include a first semiconductor layer and an n-type second semiconductor layer formed over the first semiconductor layer. A lattice constant of the first semiconductor layer can be greater than that of the second semiconductor layer.

Abstract: The present disclosure provides, among other things, human codon-optimized sequences encoding presenilin 1, and methods for using the sequences in gene therapy to treat neurodegenerative diseases including, but not limited to Alzheimer's disease, frontotemporal dementia, frontotemporal lobar degeneration, Pick's disease, Lewy body dementia, memory loss, and cognitive impairment including mild cognitive impairment (MCI).

Abstract: In a method of manufacturing a semiconductor device including a Fin FET, a fin structure, which has an upper fin structure made of SiGe and a bottom fin structure made of a different material than the upper fin structure, is formed, a cover layer is formed over the fin structure, a thermal operation is performed on the fin structure covered by the cover layer, and a source/drain epitaxial layer is formed in a source/drain region of the upper fin structure. The thermal operation changes a germanium distribution in the upper fin structure.

Abstract: The present disclosure relates to pyrimidine compounds, and more specifically, relates to pyrimidine compounds, preparation methods thereof, and uses thereof in manufacture of medicaments. Provided is a compound represented by Formula (I) or a tautomer, stereoisomer, hydrate, solvate, pharmaceutical acceptable salt, or prodrug of the compound represented by Formula (I). The compound has a significant inhibitory effect on ATX enzyme, exhibits excellent liver metabolism stability, is metabolized more slowly in the human body, and has higher exposure.

Abstract: The present disclosure discloses a preparation method of fatty acid-based VC liposomes, and belongs to the field of pharmaceutical preparations. In the disclosure, a complex of industrial conjugated linoleic acid and other fatty acids with sodium dodecyl sulfate is taken as a capsule material, which is self-assembled to embed vitamin C in an aqueous phase under an acidic condition (pH<7) to form the fatty acid-based vitamin C liposome. The preparation method of the disclosure does not use organic solvents and other substances harmful to the human body, and has the characteristics of safety and health. In addition to VC encapsulation under the acidic condition, the prepared fatty acid-based liposome can play a role in slowly releasing VC.