Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.

Abstract: A memory device and an electronic device including the same are provided. The memory device includes a first memory cell disposed at an intersection of first and second conductive lines that extend in first and second directions, respectively, a second memory cell spaced apart from the first memory cell by a first distance in the first direction, a third memory cell spaced apart from the first memory cell by a second distance in the second direction, a first insulating pattern disposed between the first memory cell and the second memory cell, and a second insulating pattern disposed between the first memory cell and the third memory cell. The second insulating pattern has a lower thermal conductivity than the first insulating pattern.

Abstract: Provided are a graphene-based laminate, a method of preparing the same, and a transparent electrode and an electronic device each including the graphene-based laminate. The graphene-based laminate includes a substrate, a graphene layer including graphene and disposed on at least one surface of the substrate, and a metal oxide layer disposed on at least one surface of the graphene layer, wherein the metal oxide layer includes a metal oxide having a greater work function than that of the graphene, and the metal oxide layer includes the metal oxide in an amount of 1 ?g to 1 mg per unit area of 1 cm2 of the graphene layer.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a plurality of memory cells each including a variable resistance layer; a substituted dielectric layer filling a space between the plurality of memory cells; and an unsubstituted dielectric layer disposed adjacent to the variable resistance layer of each of the plurality of memory cells, wherein the unsubstituted dielectric layer may include a flowable dielectric material.

Abstract: A digitizer in which a touch sensing electrode of a self-capacitive type touch sensor and a first electrode of the digitizer are formed on the same layer is provided. The digitizer according to the present invention has a high level of pressure sensing and a simplified manufacturing process.

Abstract: A flexible digitizer comprising a flexible substrate and a first and a second electrodes having thicknesses of 2000 ? to 1 ?m is provided. The digitizer according to the present invention has sufficient flex resistance for application to a flexible display device with superior electrical characteristics and visibility.

Abstract: Introduced here is a wafer separator configured to carry a semiconductor wafer with improved efficiency, protection, and reduced costs when utilized in the handling, transport, or storage of semiconductor components. The wafer separator may include a circular ring having an outer edge defining a periphery of the circular ring. The circular ring may include an inner edge defining a central opening of the circular ring. The wafer separator may include a first-right angled recess for receiving a semiconductor wafer that extends downward from a top surface of the circular ring. The wafer separator may also include a second right-angled recess for maintaining a gap beneath the semiconductor wafer when the semiconductor wafer is set within the first right-angled recess. In some embodiments, the wafer separator also includes interlock components for connecting the wafer separator to adjacent wafer separators.

Abstract: Introduced here is a wafer separator configured to carry a semiconductor wafer with improved efficiency, protection, and reduced costs when utilized in the handling, transport, or storage of semiconductor components. The wafer separator may include a circular ring having an outer edge defining a periphery of the circular ring. The circular ring may include an inner edge defining a central opening of the circular ring. The wafer separator may include a first-right angled recess for receiving a semiconductor wafer that extends downward from a top surface of the circular ring. The wafer separator may also include a second right-angled recess for maintaining a gap beneath the semiconductor wafer when the semiconductor wafer is set within the first right-angled recess. In some embodiments, the wafer separator also includes interlock components for connecting the wafer separator to adjacent wafer separators.

Abstract: The present invention provides compositions and methods for inhibiting Dkk-1 for treating or preventing an inflammatory or inflammatory-related disease or disorder.

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a plurality of memory cells each including a variable resistance layer; a substituted dielectric layer filling a space between the plurality of memory cells; and an unsubstituted dielectric layer disposed adjacent to the variable resistance layer of each of the plurality of memory cells, wherein the unsubstituted dielectric layer may include a flowable dielectric material.

Abstract: Disclosed herein are a photosensitive resin composition and an organic insulating film prepared therefrom. By optimizing the weight average molecular weight of an alkali-soluble resin and the amount of each component in the photosensitive resin composition, a coated film obtained therefrom may have high planarity property and patterns with high resolution. Accordingly, the photosensitive resin composition may be used as a material for an organic insulating film simultaneously functioning as white pixels in a liquid crystal display.

Abstract: Disclosed herein are a photosensitive resin composition and an organic insulating film prepared therefrom. By optimizing the weight average molecular weight of a copolymer, and using a specific solvent in the photosensitive resin composition, a coated film obtained therefrom may have high planarity property and patterns with high resolution. Accordingly, the photosensitive resin composition may be used as a material for an organic insulating film simultaneously functioning as white pixels.

Abstract: A digitizer in which a second electrode of the digitizer is formed in a non-patterned portion of a touch sensing electrode of a mutual-capacitive type touch sensor is provided. The digitizer according to the present invention has a high level of pressure sensing, a simplified manufacturing process, and excellent visibility.

Abstract: A digitizer in which a touch sensing electrode of a self-capacitive type touch sensor and a first electrode of the digitizer are formed on the same layer is provided. The digitizer according to the present invention has a high level of pressure sensing and a simplified manufacturing process.

Abstract: A flexible digitizer comprising a flexible substrate and a first and a second electrodes having thicknesses of 2000 ? to 1 ?m is provided. The digitizer according to the present invention has sufficient flex resistance for application to a flexible display device with superior electrical characteristics and visibility.

Abstract: A 3D semiconductor integrated circuit device and a method of manufacturing the same are provided. An active pillar is formed on a semiconductor substrate, and an interlayer insulating layer is formed so that the active pillar is buried in the interlayer insulating layer. The interlayer insulating layer is etched to form a hole so that the active pillar and a peripheral region of the active pillar are exposed. An etching process is performed on the peripheral region of the active pillar exposed through the hole by a certain depth, and a space having the depth is provided between the active pillar and the interlayer insulating layer. A silicon material layer is formed to be buried in the space having the depth, and an ohmic contact layer is formed on the silicon material layer and the active pillar.

Abstract: Disclosed is a process of preparing sustained release microspheres, containing a biodegradable polymer as a carrier and a drug, using spray drying. The process comprises preparing a solution, suspension or emulsion containing a biodegradable polymer, a drug and a solvent; spray drying the solution, suspension or emulsion; and suspending spray-dried microspheres in an aqueous solution containing polyvinyl alcohol to remove the residual solvent and increase the hydrophilicity of the microsphere surface. The process enables the preparation of microspheres having high drug encapsulation efficiency, almost not having a toxicity problem due to the residual solvent, and having good syringeability. The microspheres prepared according to the present invention release an effective concentration of a drug in a sustained manner for a predetermined period when administered to the body, and are thus useful in the treatment of diseases.

Abstract: A rainwater guide device is coupled to an outer side of the rail portion to be adjacent to the rainwater drainage hole, wherein the rainwater guide device includes a rainwater receiving portion defined at one closed side end thereof to receive the rainwater from the drainage hole and having an open top, and a rainwater outlet defined at the other open side end thereof, wherein the bottom plate includes a tilted plate tilted downwards from the rainwater receiving portion to the rainwater outlet in a longitudinal direction thereof, and two rainwater guide plates, each guide plate having a first side coupled to the tilted plate and a second side coupled to a corresponding longitudinal side plate, wherein each of the rainwater guide plates is tilted downwardly from the second side to the first side.

Abstract: A variable resistive memory device may include a phase change region, a phase change layer, a gap-filling layer and an upper electrode. The phase change region may have a sidewall and a bottom surface. The phase change layer may have a linear shape extended along the bottom surface and the sidewall of the phase change region. The gap-filling layer may be formed in a portion of the phase change region surrounded by the phase change layer. The upper electrode may be formed on the phase change layer and the gap-filling layer.

Abstract: A 3D semiconductor integrated circuit device and a method of manufacturing the same are provided. An active pillar is formed on a semiconductor substrate, and an interlayer insulating layer is formed so that the active pillar is buried in the interlayer insulating layer. The interlayer insulating layer is etched to form a hole so that the active pillar and a peripheral region of the active pillar are exposed. An etching process is performed on the peripheral region of the active pillar exposed through the hole by a certain depth, and a space having the depth is provided between the active pillar and the interlayer insulating layer. A silicon material layer is formed to be buried in the space having the depth, and an ohmic contact layer is formed on the silicon material layer and the active pillar.