Abstract: A light emitting device includes a substrate, and a plurality of light emitting structures disposed thereon. Each of the light emitting structures includes an auxiliary electrode disposed on the substrate, a first insulating layer disposed on the substrate and covering the auxiliary electrode, an electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and having a first opening exposing the electrode, an organic light emitting layer disposed in the first opening, a cathode disposed on the organic light emitting layer, at least a conductive structure penetrating through the first insulating layer and the second insulating layer, and a closed ring structure disposed on the second insulating layer and around the cathode, wherein a thickness of the closed ring structure is larger than that of the cathode.

Abstract: A semiconductor device structure is provided. The semiconductor device structure may include a substrate, a semiconductor layer, a first conductive layer, a second conductive layer, a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed on the substrate. The second dielectric layer is disposed on the first dielectric layer. The semiconductor layer is adjacent to the first dielectric layer or the second dielectric layer. The semiconductor layer is disposed on the first dielectric layer or the second dielectric layer. The first conductive layer is adjacent to the first dielectric layer or the second dielectric layer. The second conductive layer is disposed on the first dielectric layer or the second dielectric layer. The effective Young's modulus of the second dielectric layer may be smaller than the Young's modulus of the first dielectric layer.

Abstract: A semiconductor element structure and a manufacturing method for the same are provided. The semiconductor element structure may comprise a gate electrode, a dielectric layer, an active layer, a source, a drain and a protective layer. The active layer and the gate electrode are disposed on opposing sides of the dielectric layer. The source is disposed on the active layer. The drain is disposed on the active layer. The protective layer is disposed on the active layer. The protective layer may have a hydrogen content less than or equal to 0.1 at % and a sheet resistance higher than or equal to 10? 10 Ohm/sq.

Abstract: A fabricating method of a substrate board is provided. The substrate board includes a substrate having rigid areas and flexible areas, and at least an electronic component disposed on the substrate, wherein each of the rigid areas is thicker than the flexible areas. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid areas and the flexible areas may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained.

Abstract: An environmental sensitive electronic device package including a first substrate, a second substrate, an environmental sensitive electronic device, a side wall barrier structure, a first adhesive, and a second adhesive is provided. The environmental sensitive electronic device is located on the first substrate. The first adhesive is located on the first substrate. The side wall barrier structure is located on the first adhesive, and the side wall barrier structure is adhered to the first substrate through the first adhesive. The second adhesive is located on the side wall barrier structure. The side wall barrier structure is adhered to the second substrate through the second adhesive, and the side wall barrier structure, the first adhesive, and the second adhesive are located between the first substrate and the second substrate. A manufacturing method of an environmental sensitive electronic device package is also provided.

Abstract: A pixel structure and a pixel circuit having multi-display mediums are provided. A storage capacitor and a first display medium are disposed in different layers, so as to overlap the storage capacitor with a pixel electrode of the first display medium. Accordingly, an area of the first display medium can be increased for enlarging an aperture ratio of the pixel. Furthermore, because a third pixel electrode is disposed in a conductive layer, the third pixel electrode can control/drive a second display medium under a substrate.

Abstract: A semiconductor device is provided. A first semiconductor layer is disposed on a substrate and has a channel region and two doped regions beside the channel region. A first dielectric layer is disposed on the substrate and covers the first semiconductor layer. A gate is disposed on the first dielectric layer and corresponds to the channel region of the first semiconductor layer. A second dielectric layer is disposed on the first dielectric layer and covers the gate. A second semiconductor layer is disposed on the second dielectric layer and corresponds to the gate. The boundary of the second semiconductor layer does not exceed that of the gate. At least one first conductive plug penetrates through the first and second dielectric layers and contacts one doped region of the first semiconductor layer. At least one contact contacts the second semiconductor layer. A method of forming a semiconductor device is also provided.

Abstract: A display system is disclosed. The display system comprises a display device; and a computing device. The computing device executes instructions to receive a first plurality of sub-pixel values of a first plurality of sub-pixels of an image. The first plurality of sub-pixels have a plurality of colors. The computing device further executes instructions to select a first sub-pixel of the first plurality of sub-pixels. The first sub-pixel has a first color and is spatially close to a second sub-pixel of the first plurality of sub-pixels. The second sub-pixel has the first color. The computing device further executes instructions to generate a second plurality of sub-pixel values of a second plurality of sub-pixels based on at least first and second sub-pixel values corresponding to the first and second sub-pixels of the first plurality of sub-pixels.

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate, at least an inorganic material layer, at least one dielectric layer, a source, a drain, and an active layer. The active layer is located on the substrate. The source and the drain cover a part of the active layer and a part of the substrate. A channel region exists between the source and the drain. The inorganic material layer is filled into the channel region. The dielectric layer at least including an organic material covers the inorganic material, the source and the drain. The gate is disposed on the dielectric layer.

Abstract: A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the second region. The light-electricity-transforming element is disposed over the substrate and located in the first region. At least a portion of a side wall of the light-electricity-transforming element corresponds to at least a portion of a side wall of the light-emitting element, so that at least a side light from the light-emitting element is received and transformed into an electricity power by the light-electricity-transforming device.

Abstract: A packaging method of an organic light emitting diode (OLED) is described. First, a substrate is provided, and the substrate has the OLED device formed thereon. Thereafter, at least one protection layer is formed on the substrate, so as to cover the peripheral sidewall of the OLED device entirely. The step of forming the protection layer includes forming an organic layer on the substrate, and then forming a metal layer on the organic layer, wherein the metal layer at least covers a sidewall of the OLED device. Afterwards, an oxidation treatment is performed, so as to oxidize a portion of the metal layer.

Abstract: The disclosure is related to organic semiconductor compounds including benzodithieno(3,2-b:2?,3?-d)thiophene (BDTT) and the derivatives of benzodithieno(3,2-b:2?,3?-d)thiophene. The organic compounds of the disclosure have high resistance to the oxidation and high electrical stability. Accordingly, the semiconductor device having an organic semiconductor layer made of the organic compounds of the disclosure has stable electrical performance, and the reliability of the semiconductor device is improved.

Abstract: A composition for photosensitive dielectric material is provided. The composition includes 4 to 10 percent by weight of a polymer material, 1.5 to 10 percent by weight of a crosslinking agent, 0.32 to 2 percent by weight of a photoacid generator (PAG) and 78 to 94.18 percent by weight of solvent, based on a total weight of the composition.

Abstract: A fabricating method of a substrate board is provided. The substrate board includes a substrate having rigid areas and flexible areas, and at least an electronic component disposed on the substrate, wherein each of the rigid areas is thicker than the flexible areas. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid areas and the flexible areas may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained.

Abstract: A substrate board, a fabricating method thereof, and a display using the same are provided. The substrate board includes a substrate having at least a rigid area and at least a flexible area, and at least an electronic component disposed on a surface of the substrate, wherein the rigid area is thicker than the flexible area. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid area and the flexible area may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained.

Abstract: A flexible display apparatus including a first flexible film, a second flexible film, and a flexible display panel is provided. The second flexible film is disposed over the first flexible film, wherein a channel exists between the first flexible film and the second flexible film. The flexible display panel is disposed on the second flexible film. A fabrication method of a flexible display apparatus is also provided.

Abstract: A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the second region. The light-electricity-transforming element is disposed over the substrate and located in the first region. At least a portion of a side wall of the light-electricity-transforming element corresponds to at least a portion of a side wall of the light-emitting element, so that at least a side light from the light-emitting element is received and transformed into an electricity power by the light-electricity-transforming device.

Abstract: The disclosure is related to organic semiconductor compounds including benzodithieno(3,2-b:2?,3?-d)thiophene (BDTT) and the derivatives of benzodithieno(3,2-b:2?,3?-d)thiophene. The organic compounds of the disclosure have high resistance to the oxidation and high electrical stability. Accordingly, the semiconductor device having an organic semiconductor layer made of the organic compounds of the disclosure has stable electrical performance, and the reliability of the semiconductor device is improved.

Abstract: A package of an environmentally sensitive electronic device including a first substrate, a second substrate, an environmentally sensitive electronic device, a plurality of barrier structures, and a fill is provided. The second substrate is disposed above the first substrate. The environmentally sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The barrier structures are disposed between the first substrate and the second substrate, wherein the barrier structures surround the environmental sensitive electronic device, and the water vapor transmission rate of the barrier structures is less than 10?1 g/m2/day. The fill is disposed between the first substrate and the second substrate and covers the environmentally sensitive electronic device and the barrier structures.