Abstract: A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

Abstract: A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.