Abstract: A package of an environmentally sensitive electronic device including a first substrate, a second substrate, an environmentally sensitive electronic device, a plurality of barrier structures, and a fill is provided. The second substrate is disposed above the first substrate. The environmentally sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The barrier structures are disposed between the first substrate and the second substrate, wherein the barrier structures surround the environmental sensitive electronic device, and the water vapor transmission rate of the barrier structures is less than 10?1 g/m2/day. The fill is disposed between the first substrate and the second substrate and covers the environmentally sensitive electronic device and the barrier structures.

Abstract: A pixel structure and a pixel circuit having multi-display mediums are provided. A storage capacitor and a first display medium are disposed in different layers, so as to overlap the storage capacitor with a pixel electrode of the first display medium. Accordingly, an area of the first display medium can be increased for enlarging an aperture ratio of the pixel. Furthermore, because a third pixel electrode is disposed in a conductive layer, the third pixel electrode can control/drive a second display medium under a substrate.

Abstract: A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.

Abstract: Methods for forming a top-emitting organic light emitting display and a reflective type liquid crystal display are provided. The method for forming a top-emitting organic light emitting display comprises: providing a handling substrate; providing a composite layer on the handling substrate; forming an organic light emitting unit on the composite layer; and forming a top electrode on the organic light emitting unit.

Abstract: A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.

Abstract: A top-emitting OLED display and fabrication method thereof are provided. The top-emitting OLED display includes providing a handling substrate. A composite layer is formed on the handling substrate. An organic light emitting unit is formed on the composite layer. A top electrode is formed on the organic light emitting unit. A reflective type display and fabrication method thereof are provided. The reflective type display includes providing a handling substrate. A composite layer is formed on the handling substrate, a thin film transistor array is formed on the composite layer.

Abstract: A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate, at least an inorganic material layer, at least one dielectric layer, a source, a drain, and an active layer. The active layer is located on the substrate. The source and the drain cover a part of the active layer and a part of the substrate. A channel region exists between the source and the drain. The inorganic material layer is filled into the channel region. The dielectric layer at least including an organic material covers the inorganic material, the source and the drain. The gate is disposed on the dielectric layer.

Abstract: A package of an environmentally sensitive electronic device including a first substrate, a second substrate, an environmentally sensitive electronic device, a plurality of barrier structures, and a fill is provided. The second substrate is disposed above the first substrate. The environmentally sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The barrier structures are disposed between the first substrate and the second substrate, wherein the barrier structures surround the environmental sensitive electronic device, and the water vapor transmission rate of the barrier structures is less than 10?1 g/m2/day. The fill is disposed between the first substrate and the second substrate and covers the environmentally sensitive electronic device and the barrier structures.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.

Abstract: A packaging method of an organic light emitting diode (OLED) is described. First, a substrate is provided, and the substrate has the OLED device formed thereon. Thereafter, at least one protection layer is formed on the substrate, so as to cover the peripheral sidewall of the OLED device entirely. The step of forming the protection layer includes forming an organic layer on the substrate, and then forming a metal layer on the organic layer, wherein the metal layer at least covers a sidewall of the OLED device. Afterwards, an oxidation treatment is performed, so as to oxidize a portion of the metal layer.

Abstract: A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

Abstract: A substrate board, a fabricating method thereof, and a display using the same are provided. The substrate board includes a substrate having at least a rigid area and at least a flexible area, and at least an electronic component disposed on a surface of the substrate, wherein the rigid area is thicker than the flexible area. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid area and the flexible area may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained.

Abstract: A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.

Abstract: A composition for photosensitive dielectric material is provided. The composition includes 4 to 10 percent by weight of a polymer material, 1.5 to 10 percent by weight of a crosslinking agent, 0.32 to 2 percent by weight of a photoacid generator (PAG) and 78 to 94.18 percent by weight of solvent, based on a total weight of the composition.

Abstract: A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.

Abstract: A method of manufacturing an organic thin film transistor is described. A patterned insulating layer having an opening therein is formed on a substrate. A gate is formed in the opening of the insulating layer, and a gate insulating layer is formed on the gate. A conductive material layer is formed on the gate insulating layer by a printing process. One of the gate insulating layer and the conductive material layer is hydrophobic or hydrophilic and the other is hydrophilic or hydrophobic, such that the conductive material layer is naturally separated to two sides of the gate insulating layer to form a source and a drain. An active layer is formed on the gate insulating layer between the source and the drain.

Abstract: A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.

Abstract: A top-emitting OLED display and fabrication method thereof are provided. The top-emitting OLED display includes providing a handling substrate. A composite layer is formed on the handling substrate. An organic light emitting unit is formed on the composite layer. A top electrode is formed on the organic light emitting unit. A reflective type display and fabrication method thereof are provided. The reflective type display includes providing a handling substrate. A composite layer is formed on the handling substrate, a thin film transistor array is formed on the composite layer.

Abstract: A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.