Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A method of forming a structure useful in all forms of deposited metals, elemental metals, metal alloys, metal compounds, metal systems, including refractory metals such as Tungsten and Tantalum is provided. The structure generally comprises a substrate, a first layer formed atop the substrate, and a second layer formed atop the first layer. The first layer comprises a metal, which can be chromium, gold, platinum, aluminum, nickel, or copper. The second layer comprises a metal, elemental metal, metal alloy, metal compound, or metal system comprising a refractory metal such as tungsten or tantalum. The substrate can be a silicon, quartz or glass, metal, metal oxide or nitride.

Abstract: A dual-display module has a first display, a second display opposing the first display, and a backlight module disposed between the first display and the second display. The backlight module has at least one tunable mirror sheet, whereby one side display can be on a mirror-like state at the same time when the other side display is in an active operation state.

Abstract: A dual-display module has a first display, a second display opposing the first display, and a backlight module disposed between the first display and the second display. The backlight module has at least one tunable mirror sheet, whereby one side display can be on a mirror-like state at the same time when the other side display is in an active operation state.

Abstract: The present invention provides a color liquid crystal display device in which a color filter layer is formed on an array substrate. The array substrate includes a scan line and a data line forming a pixel, on which a thin film transistor is formed, and a pixel electrode is connected to the thin film transistor. A black matrix layer is formed on the array substrate. A black matrix frame is formed around the periphery of the black matrix layer. A color filter layer is formed on the array substrate and the black matrix layer, and extends to cover the black matrix frame.

Abstract: A privacy apparatus has a transparent substrate and a liquid crystal layer formed on the transparent substrate. A thickness of the liquid crystal layer determines a range of viewing angles for the privacy apparatus; and when the thickness is greater, the range of viewing angles is smaller. Moreover, an absorption axis of the liquid crystal layer is substantially parallel to the transparent substrate and is substantially perpendicular to the range of viewing angles.

Abstract: The present invention provides a color liquid crystal display device in which a color filter layer is formed on an array substrate. The array substrate includes a scan line and a data line forming a pixel, on which a thin film transistor is formed, and a pixel electrode is connected to the thin film transistor. A black matrix layer is formed on the array substrate. A black matrix frame is formed around the periphery of the black matrix layer. A color filter layer is formed on the array substrate and the black matrix layer, and extends to cover the black matrix frame.

Abstract: Methods, apparatus, compositions, and products for screening and/or treating cancer in a patient are disclosed. Methods, apparatus, compositions, and products comprise a stathmin/oncoprotein 18 sequence. The sequence of the invention may be a single stranded nucleic acid,a double stranded nucleic acid, a polypeptided, an antibody, an oligonucelotide, or any combination thereof.

Abstract: This proposal presents performance indices and search criteria for the text script generation in the design of corpus-based TTS systems. Based on our criteria a new search method is presented to solve the text selection problem more systematically and efficiently, unlike previous researches either concentrated on covering rate or on hit rate. By control a weighting factor, the covering rate of unit types can be increased to improve the robustness of the TTS system. Finally, the scalable and controllable design of the multi-stage search can produce various kinds of text scripts ideally suitable for the requirement of various kinds of corpus-based TTS systems.

Abstract: Different liquid crystal twist angles realize different luminescence efficiencies for reflection and transmission regions, respectively. Therefore, the difference of liquid crystal twist is used in reflection and transmission region, respectively, of a liquid crystal display to maximize their luminescence efficiency so that the total luminescence may reach the optimum state.

Abstract: This invention is directed to a process for the preparation of conjugated estrogens from pregnant mare urine (PMU), comprising the steps of

Abstract: An exhaust gas treatment apparatus for treating exhaust gases generated in semiconductor manufacturing processes. It includes a main pipe, a U pipe, a discharge pipe and a tank. The main pipe has an inlet to receive exhaust gases, a heater surrounding the main pipe to heat the exhaust gases to form exhaust gas powder, a sprinkler to spray cooling water to cool the heated exhaust gases to form vapor and waste water and an outlet to discharge vapor and waste water into the U pipe. The U pipe has a first connector connecting with the main pipe and a second connector connecting with the discharging pipe. The tank is located below the U pipe under the first connector for receiving lump type exhaust gas powder scrapping from the inside wall of the main pipe. The U pipe will not be blocked by the lump type exhaust gas powder so that exhaust gas treatment efficiency won't be harmfully affected.

Abstract: An exhaust gas treatment apparatus for treating exhaust gas generated in semiconductor manufacturing processes. It includes a main pipe, a gas vortex means, a water vortex means, an U pipe and a discharge pipe. The main pipe transforms the exhaust gases to waste powder which are discharged out through the U pipe and the discharge pipe. The gas vortex means and water vortex means are located below the main pipe for generating annular and even downward gas flow and water flow at the outlet of the main pipe for preventing reflux of waste powder from entering into the main pipe. Waste powder thus won't deposit around the outlet. Scraper in the main pipe won't be stuck or deformed. Waste powder may be discharged out through the U pipe and discharge pipe smoothly and efficiently.