Abstract: A method of manufacturing an organic thin film transistor is described. A patterned insulating layer having an opening therein is formed on a substrate. A gate is formed in the opening of the insulating layer, and a gate insulating layer is formed on the gate. A conductive material layer is formed on the gate insulating layer by a printing process. One of the gate insulating layer and the conductive material layer is hydrophobic or hydrophilic and the other is hydrophilic or hydrophobic, such that the conductive material layer is naturally separated to two sides of the gate insulating layer to form a source and a drain. An active layer is formed on the gate insulating layer between the source and the drain.

Abstract: A method of fabricating a metal-oxide-semiconductor transistor is provided. A first gate structure and a second gate structure are formed on a substrate. The first gate structure has a dimension greater than the second gate structure. Then, first lightly doped drain regions are formed in the substrate on two sides of the first gate structure. A lightly doped drain annealing process is performed. Next, second lightly doped drain regions are formed in the substrate on two sides of the second gate structure. First spacers are formed on the sidewalls of the first gate structure and second spacers are formed on the sidewalls of the second gate structure at the same time. Afterwards, first source/drain regions are formed in the substrate on two sides of the first spacers and second source/drain regions are formed in the substrate on two sides of the second spacers. A source/drain annealing process is performed.

Abstract: A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.

Abstract: A top-emitting OLED display and fabrication method thereof are provided. The top-emitting OLED display includes providing a handling substrate. A composite layer is formed on the handling substrate. An organic light emitting unit is formed on the composite layer. A top electrode is formed on the organic light emitting unit. A reflective type display and fabrication method thereof are provided. The reflective type display includes providing a handling substrate. A composite layer is formed on the handling substrate, a thin film transistor array is formed on the composite layer.

Abstract: A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

Abstract: The invention provides flexible electronic substrate structures and fabrication methods thereof. The flexible electronic substrate structures include a large scale carrier and a plurality of flexible substrates disposed on the large scale carrier, wherein the flexible substrate includes polymeric material formed by coating. The flexible substrates are patterned polymer materials formed by a coating process, wherein the coating process comprises doctor knife coating, spin coating, or table coating.

Abstract: The present invention is an LED lamp lens, on which orderly arranged surface plural protuberances. And with the differences of light perviousness, a particular luminous pattern of the LED lamp is displayed when the LED lamp is turned on.

Abstract: This proposal presents performance indices and search criteria for the text script generation in the design of corpus-based TTS systems. Based on our criteria a new search method is presented to solve the text selection problem more systematically and efficiently, unlike previous researches either concentrated on covering rate or on hit rate. By control a weighting factor, the covering rate of unit types can be increased to improve the robustness of the TTS system. Finally, the scalable and controllable design of the multi-stage search can produce various kinds of text scripts ideally suitable for the requirement of various kinds of corpus-based TTS systems.

Abstract: A method of forming a structure useful in all forms of deposited metals, elemental metals, metal alloys, metal compounds, metal systems, including refractory metals such as tungsten and tantalum is provided. The structure generally comprises a substrate, a first layer formed atop the substrate, and a second layer formed atop the first layer. The first layer comprises a metal, which can be chromium, gold, platinum, aluminum, nickel, or copper. The second layer comprises a metal, elemental metal, metal alloy, metal compound, or metal system comprising a refractory metal such as tungsten or tantalum. The substrate can be a silicon, quartz or glass, metal, metal oxide or nitride.

Abstract: An IC socket (1) includes a base (2), a cover (5) slidably engaged upon the base, and a lever (4) for driving the cover to slide on the base. The lever includes a lateral rod (41) and a longitudinal rod (42) connected to the lateral rod. The lateral rod is received in between the cover and the base. The longitudinal rod is exposed out of the cover and the base, with a connecting section (421) of the longitudinal rod parallel to one side face of the cover, and an acting section (423) joined to the connecting section and configured to be laterally tilted towards the one side face of the cover. Thus, this configuration of the acting section of the longitudinal rod will occupy less room on a printed circuit board, and enables the lever to be engagably retained on the cover side face so as to prevent the lever from being removed by accidental touching or vibration.

Abstract: A method of text script generation for a corpus-based text-to-speech system includes searching in a source corpus having L sentences, selecting N sentences with a best integrated efficiency as N best cases, and setting iteration k to be 1; for each case n of the N best cases, selecting Mk+1 best sentences with the best integrated efficiency from the unselected sentences in the source corpus; keeping N best cases out of the total unselected sentences for next iteration, and increasing iteration k by 1; and if a termination criterion being reached, setting the best case in the N traced cases as the text script, otherwise, returning to the (k+1)th iteration of searching in the unselected sentences for (k+1)th sentence; wherein the best integrated efficiency depends on a function of combining the covering rate of the synthesis unit type, the hit rate of the synthesis unit type, and the text script size.

Abstract: Wireless communication methods and apparatuses for reducing data retransmission are provided. One wireless communication apparatus performs one of the methods comprising the steps of determining whether a reset is triggered; if yes, receiving a status report and transmitting a datum having not been received successfully in response to the status report. Another wireless communication apparatus performs another method comprising the steps of receiving a trigger of a reset; determining what datum having been received successfully in response to the trigger; and generating a status report under a particular condition. The status report indicates the datum having been received successfully.

Abstract: A method of fabricating a metal-oxide-semiconductor transistor is provided. A first gate structure and a second gate structure are formed on a substrate. The first gate structure has a dimension greater than the second gate structure. Then, first lightly doped drain regions are formed in the substrate on two sides of the first gate structure. A lightly doped drain annealing process is performed. Next, second lightly doped drain regions are formed in the substrate on two sides of the second gate structure. First spacers are formed on the sidewalls of the first gate structure and second spacers are formed on the sidewalls of the second gate structure at the same time. Afterwards, first source/drain regions are formed in the substrate on two sides of the first spacers and second source/drain regions are formed in the substrate on two sides of the second spacers. A source/drain annealing process is performed.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

Abstract: An IC socket (1) includes a base (2), a cover (5) slidably engaged upon the base, and a lever (4) for driving the cover to slide on the base. The lever includes a lateral rod (41) and a longitudinal rod (42) connected to the lateral rod. The lateral rod is received in between the cover and the base. The longitudinal rod is exposed out of the cover and the base, with a connecting section (421) of the longitudinal rod parallel to one side face of the cover, and an acting section (423) joined to the connecting section and configured to be laterally tilted towards the one side face of the cover. Thus, this configuration of the acting section of the longitudinal rod will occupy less room on a printed circuit board, and enables the lever to be engagably retained on the cover side face so as to prevent the lever from being removed by accidental touching or vibration.

Abstract: The present invention is a feed mixing tank. The regulating portion is a topology structure and has at least one collecting part, at least one shunt part and at least one flow channel, wherein the collecting part, the shunt part and the flow channel are connected to each other to mix and separate fuel therein. The pour-in portion pours outside fuel in the feed mixing tank and connects to the regulating portion. The output portion outputs the fuel passing through the regulating portion and connects to the regulating portion.

Abstract: A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.

Abstract: The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.

Abstract: Different liquid crystal twist angles realize different luminescence efficiencies for reflection and transmission regions, respectively. Therefore, the difference of liquid crystal twist is used in reflection and transmission region, respectively, of a liquid crystal display to maximize their luminescence efficiency so that the total luminescence may reach the optimum state.