Abstract: The present application relates to Multicomponent Nucleic Acid Enzymes (MNAzymes), which may be used for detecting, identifying and/or quantifying targets. More particularly, this application provides methods of designing and making more reliable MNAzymes, as well as compositions comprising MNAzyme components and methods of using MNAzymes.

Abstract: A flexible display apparatus including a first flexible film, a second flexible film, and a flexible display panel is provided. The second flexible film is disposed over the first flexible film, wherein a channel exists between the first flexible film and the second flexible film. The flexible display panel is disposed on the second flexible film. A fabrication method of a flexible display apparatus is also provided.

Abstract: A manufacturing method for an axially symmetric light-emitting diode assembly disclosed herein includes steps of: providing a substrate; and forming a plurality of light-emitting areas on the substrate. The substrate has a central axis. The light-emitting areas are arranged with axial symmetry around the central axis while being insulated from each other. Each of the light-emitting areas has at least one light-emitting diode, and the light-emitting diodes are electrically connected to each other. Since the light-emitting areas are formed on the substrate with the axially symmetric arrangement, the axially symmetric light-emitting diode assembly can present a well symmetric light pattern.

Abstract: A method of text script generation for a corpus-based text-to-speech system includes searching in a source corpus having L sentences, selecting N sentences with a best integrated efficiency as N best cases, and setting iteration k to be 1; for each case n of the N best cases, selecting Mk+1 best sentences with the best integrated efficiency from the unselected sentences in the source corpus; keeping N best cases out of the total unselected sentences for next iteration, and increasing iteration k by 1; and if a termination criterion being reached, setting the best case in the N traced cases as the text script, otherwise, returning to the (k+1)th iteration of searching in the unselected sentences for (k+1)th sentence; wherein the best integrated efficiency depends on a function of combining the covering rate of the synthesis unit type, the hit rate of the synthesis unit type, and the text script size.

Abstract: A light-emitting device and a method for manufacturing the same are provided. The light-emitting device comprises a substrate, a light-emitting element and a light-electricity-transforming element. The substrate has a first region and a second region which are non-overlapping. The light-emitting element is disposed over the substrate and located in the second region. The light-electricity-transforming element is disposed over the substrate and located in the first region. At least a portion of a side wall of the light-electricity-transforming element corresponds to at least a portion of a side wall of the light-emitting element, so that at least a side light from the light-emitting element is received and transformed into an electricity power by the light-electricity-transforming device.

Abstract: An armrest adjustment device is revealed. The armrest adjustment device includes an armrest arranged at a top surface of an armrest support. The lower part of the armrest support is connected to a chair seat. The armrest can be adjusted to move forward and backward in relation to the chair seat. A first component is mounted in the armrest. The first component is assembled with and fixed on the armrest support so that the armrest can be moved forward and backward in relation to the first component. Moreover, a second component is arranged between the armrest and the armrest support. Instead of the first component, the second component is assembled with and fixed on the armrest support. Thus the armrest is moved in the left/right direction in relation to the second component.

Abstract: The present invention relates to an alternating current (AC) light emitting diode (LED) structure with overload protection, which comprises an AC LED, a heat dissipating unit and an overload protecting unit. The AC LED is thermally connected with the heat dissipating unit, and the overload protecting unit is connected in series between the AC LED and a power source. Thus, when an overload current is inputted to the AC LED structure, the temperature of the overload protecting unit will rise to disconnect the AC LED from the power source. In this way, an open-circuit status can be produced timely in the AC LED structure to block the power input into the AC LED for purpose of protection against overload.

Abstract: The disclosure is related to organic semiconductor compounds including benzodithieno(3,2-b:2?,3?-d)thiophene (BDTT) and the derivatives of benzodithieno(3,2-b:2?,3?-d)thiophene. The organic compounds of the disclosure have high resistance to the oxidation and high electrical stability. Accordingly, the semiconductor device having an organic semiconductor layer made of the organic compounds of the disclosure has stable electrical performance, and the reliability of the semiconductor device is improved.

Abstract: A package of an environmentally sensitive electronic device including a first substrate, a second substrate, an environmentally sensitive electronic device, a plurality of barrier structures, and a fill is provided. The second substrate is disposed above the first substrate. The environmentally sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The barrier structures are disposed between the first substrate and the second substrate, wherein the barrier structures surround the environmental sensitive electronic device, and the water vapor transmission rate of the barrier structures is less than 10?1 g/m2/day. The fill is disposed between the first substrate and the second substrate and covers the environmentally sensitive electronic device and the barrier structures.

Abstract: A motion control servo loop apparatus, comprising: a feed-forward control module, and a proportional-integral-derivative (PID) control loop and a compensation adder. The feed-forward control module is capable of generating a feed-forward compensation. The PID control loop further comprises: a proportional control module, an integral control module and a derivative control module. The proportional control module is capable of generating a proportional compensation. The derivative control module is capable of generating a derivative compensation. The integral control module uses a digital differential analyzer (DDA) algorithm to perform integration for accumulated errors with respect to each sampling clock at each DDA pulse and thus output an accumulated error, which is then processed to generate an integral compensation.

Abstract: An optical proximity correction process for designing a mask according to a target exposure intensity of each edge of a pattern is provided. Each edge is at a corresponding current edge position which corresponds to a current exposure intensity. The process comprises repeating a convergence process on each edge to determine an adjusted position for the edge until an adjusted exposure intensity of the edge is equal to the target exposure intensity. For each edge, the convergence process comprises comparing the target exposure intensity with the current exposure intensity to determine an in-position correlating to a first exposure intensity and an out-position correlating to a second exposure intensity, wherein the target exposure intensity is within a range between the first and the second exposure intensities. An interpolation is performed to obtain the adjusted position according to the target exposure intensity. The pattern is updated according to the adjusted position.

Abstract: A pixel structure and a pixel circuit having multi-display mediums are provided. A storage capacitor and a first display medium are disposed in different layers, so as to overlap the storage capacitor with a pixel electrode of the first display medium. Accordingly, an area of the first display medium can be increased for enlarging an aperture ratio of the pixel. Furthermore, because a third pixel electrode is disposed in a conductive layer, the third pixel electrode can control/drive a second display medium under a substrate.

Abstract: A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A manufacturing method for an axially symmetric light-emitting diode assembly disclosed herein includes steps of: providing a substrate; and forming a plurality of light-emitting areas on the substrate. The substrate has a central axis. The light-emitting areas are arranged with axial symmetry around the central axis while being insulated from each other. Each of the light-emitting areas has at least one light-emitting diode, and the light-emitting diodes are electrically connected to each other. Since the light-emitting areas are formed on the substrate with the axially symmetric arrangement, the axially symmetric light-emitting diode assembly can present a well symmetric light pattern.

Abstract: Methods for forming a top-emitting organic light emitting display and a reflective type liquid crystal display are provided. The method for forming a top-emitting organic light emitting display comprises: providing a handling substrate; providing a composite layer on the handling substrate; forming an organic light emitting unit on the composite layer; and forming a top electrode on the organic light emitting unit.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: An AC LED structure includes an insulating substrate, an LED set, a first metal layer and a second metal layer. The LED set has a first light-emitting diode and a second light-emitting diode, which are deposited on the insulating substrate and insulated from each other. The first metal layer and the second metal layer commonly have a first profile and serve to electrically connect the first light-emitting diode and the second light-emitting diode in an inverse parallel connection. In virtue of the first metal layer and the second metal layer of the first profile deposited on the first light-emitting diode and the second light-emitting diode, the LED set is allowed to be connected in series or in parallel with another LED set according to practical needs, so as to be able to endure high current density or high voltage operation.

Abstract: An LED base structure with an embedded capacitor includes a body, at least one pair of metal layers, at least one dielectric layer, and at least two conductive channels. The body is an insulating base. The metal layers are disposed in the body, and the dielectric layer is disposed between the metal layers, so as to form an embedded capacitor. The conductive channels are electrically connected to the metal layers, respectively. The LED base structure is further electrically connected to a resistor for forming a resistor-capacitor delay circuit whereby a phase delay is effectuated whenever AC power is supplied to the LED base structure, so as to control the time for switching on one of two parallel-connected LEDs and, as a result, prevent the LEDs from flashing which might otherwise arise when the LEDs are supplied with AC power.

Abstract: A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.